Collaborative Research Centre 917 Nanoswitches - Theory and modelling of valence-change based resistive switching

  SFB 917 Nanoswitches

We aim at revealing the microscopic mechanisms determining the resistive switching process in valence change materials (VCMs) through density functional theory (DFT) calculations and the subsequent simulation of resistive-switching random access memory (ReRAM) cells using the kinetic Monte Carlo (KMC) method. We will reach our objectives by developing a structural model for the formed state as function of degree of oxygen deficiency combining ab initio calculations with configurational optimisation using a genetic algorithm, by studying the diffusion barriers of vacancy complexes and interstitial cations in a metal oxide in the vicinity of the electrode under the electric field and by exploring the structure of the oxide filament-electrode interfaces including defects. This information will be provided as an input for KMC simulations to investigate the resistive switching process for longer time and length scales.