Person

Dr.-Ing., Universitätsprofessor

Christoph Jungemann

Institutsleiter

Lehrstuhl und Institut für Theoretische Elektrotechnik

Address

Building: 3020

Room: A1.14

Kackertstr. 15-17

52072 Aachen

Contact

WorkPhone
Phone: +49 241 80 23939
Fax Fax: +49 241 80 622294
 

Curriculum Vitae

Curriculum Vitae

1984

Abitur at the Augustin-Wibbelt-Gymnasium in Warendorf

1984-1990

Study of electrical engineering at RWTH

1990

Dlploma in electrical engineering specializing in solid-state electroni

1990-1995

Research Mitarbeiter am Institut für Theoretische Elektrotechnik der RWTH

1995

Doctorate to Dr.-Ing.

1995-1997

Component engineer in the research and development department of Fujitsu, Kawasaki, Japan

1997-2002

Senior engineer at the Institute for Theoretical Electrical Engineering and Microelectronics at the University of Bremen

2001

Habilitation at the University of Bremen with the license to teach theoretical electrical engineering

2002-2003

Scientific rasearcher at the Center for Integrated System, Stanford University, USA

2003-2006

Research assistant at the Institute for Network Theory and Circuit Technology at the TU Braunschweig

2003

Re-habilitation at the TU Braunschweig with the license to teach theoretical electrical engineering

2006-2011

University professor for microelectronics at the University of the Federal Armed Forces in Munich and head of the institute for microelectronics and circuit technology

2006

IEEE Paul-Rappaport-Award for 2005

2007-2010

Co-editor of the IEEE Transactions on Electron Devices

Seit 2011

University professor for theoretical electrical engineering at RWTH and head of the Institute for theoretical electrical engineering

2014-2020

Member of the technical committee for electrical engineering of the accreditation agency ASIIN

2017

Teaching award of the RWTH

2017-2021

Dean of Studies for the Faculty of Electrical Engineering and Information Technology at RWTH

2019

Appointment to IEEE Fellow

 

Publications

Title Author(s)
Spherical Harmonics Expansion and Multi-Scale Modeling
Contribution to a book (2022)
Meinerzhagen, Bernd (Corresponding author)
Jungemann, Christoph
Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation
Contribution to a book, Contribution to a conference proceedings (2022)
Jungemann, Christoph (Corresponding author)
Noei, Maziar (Corresponding author)
Linn, Tobias Sebastian (Corresponding author)
Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures
Contribution to a conference proceedings, Journal Article (2022)
Jungemann, Christoph (Corresponding author)
Meng, F.
Thomson, M. D.
Roskos, H. G.
Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses
Journal Article (2022)
Meng, Fanqi (Corresponding author)
Walla, Frederik
ul-Islam, Qamar
Pashkin, Alexej
Schneider, Harald
Jungemann, Christoph
Thomson, Mark D. (Corresponding author)
Roskos, Hartmut G. (Corresponding author)
Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress
Journal Article (2022)
Dieball, Oliver (Corresponding author)
Rücker, Holger
Heinemann, Bernd
Jungemann, Christoph
Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation
Journal Article (2022)
Noei, Maziar (Corresponding author)
Luckner, Paul
Linn, Tobias Sebastian
Jungemann, Christoph
A Maximum Principle for Drift-Diffusion Equations and the Scharfetter-Gummel Discretization
Contribution to a book, Contribution to a conference proceedings (2021)
Bittner, Kai (Corresponding author)
Brachtendorf, Hans Georg
Linn, Tobias Sebastian
Jungemann, Christoph
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
Contribution to a book, Contribution to a conference proceedings (2021)
Müller, Markus (Corresponding author)
Schröter, M.
Jungemann, Christoph
Weimer, C.
Special Issue on New Simulation Methodologies for Next-Generation TCAD Tools
Book (2021)
Jungemann, Christoph (Editor)
Bonani, Fabrizio (Editor)
Cea, Stephen M. (Editor)
Gnani, Elena (Editor)
Hong, Sung-Min (Editor)
Jin, Seonghoon (Editor)
Liu, Xiaoyan (Editor)
Moroz, Victor (Editor)
Verhulst, Anne (Editor)
High-harmonic generation from weakly p-doped Si pumped with intense THz pulses
Contribution to a book, Contribution to a conference proceedings (2021)
Meng, Fanqi
Walla, Frederik
ul-Islam, Qamar
Thomson, Mark D.
Kovalev, Sergey
Deinert, Jan-Christoph
Ilyakov, Igor
Chen, Mingshuai
Ponomaryov, Alexey
Pavlov, Sergey G.
Hubers, Heinz-Wilhelm
Abrosimov, Nikolay V.
Jungemann, Christoph
Roskos, Hartmut G.
A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation
Journal Article (2021)
Noei, Maziar (Corresponding author)
Linn, Tobias Sebastian
Luckner, Paul
Jungemann, Christoph
Foreword Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools"
Contribution to a book, Journal Article (2021)
Jungemann, Christoph
Bonani, Fabrizio
Cea, Stephen M.
Gnani, Elena
Hong, Sung-Min
Jin, Seonghoon
Liu, Xiaoyan
Moroz, Victor
Verhulst, Anne
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Journal Article (2021)
Jech, Markus (Corresponding author)
El-Sayed, Al-Moatasem (Corresponding author)
Tyaginov, Stanislav (Corresponding author)
Waldhör, Dominic (Corresponding author)
Bouakline, Foudhil (Corresponding author)
Saalfrank, Peter (Corresponding author)
Jabs, Dominic (Corresponding author)
Jungemann, Christoph (Corresponding author)
Waltl, Michael (Corresponding author)
Grasser, Tibor (Corresponding author)
Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations
Journal Article (2020)
Linn, Tobias Sebastian (Corresponding author)
Bittner, Kai
Brachtendorf, Hans Georg
Jungemann, Christoph
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space : Implications and Peculiarities
Journal Article (2020)
Jech, Markus (Corresponding author)
Rott, Gunnar
Reisinger, Hans
Tyaginov, Stanislav
Rzepa, Gerhard
Grill, Alexander
Jabs, Dominic
Jungemann, Christoph
Waltl, Michael
Grasser, Tibor
Studying the switching variability in redox-based resistive switching devices
Journal Article (2020)
Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan
Jungemann, Christoph
A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
Journal Article (2020)
Noei, Maziar (Corresponding author)
Linn, Tobias Sebastian
Jungemann, Christoph
The Langevin-Boltzmann Equation for Noise Calculation
Contribution to a book (2020)
Jungemann, Christoph (Corresponding author)
First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation
Contribution to a book, Contribution to a conference proceedings (2019)
Jech, M.
Tyaginov, S.
Kaczer, B.
Franco, J.
Jabs, Dominic
Jungemann, Christoph
Waltl, M.
Grasser, T.
On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability
Contribution to a book, Contribution to a conference proceedings (2019)
Jungemann, Christoph (Corresponding author)
Linn, Tobias Sebastian (Corresponding author)
Kargar, Zeinab (Corresponding author)
RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver
Journal Article (2019)
Noei, Maziar (Corresponding author)
Jungemann, Christoph
Introducing a Cross-University Bachelor's Programme with Orientation Semester : Enabling a Permeable Academic Education System
Contribution to a book, Contribution to a conference proceedings (2019)
Bragard, Michael (Corresponding author)
Sube, Maike
Schneider, Maike
Jungemann, Christoph
Transient Simulation of Current and Electrophosphorescence in Organic Light-Emitting Diodes Using the Master Equation
Journal Article (2019)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
Master equation study of excitonic processes limiting the luminous efficacy in phosphorescent organic light-emitting diodes
Journal Article (2019)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics : Part II: Theory
Journal Article (2018)
Jech, Markus (Corresponding author)
Ullmann, Bianka
Rzepa, Gerhard
Tyaginov, Stanislav
Grill, Alexander
Waltl, Michael
Jabs, Dominic
Jungemann, Christoph
Grasser, Tibor
Investigation of moments-based transport models applied to plasma waves and the Dyakonov-Shur instability
Contribution to a book, Journal Article (2019)
Linn, Tobias Sebastian (Corresponding author)
Kargar, Zeinab
Jungemann, Christoph
KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
Journal Article (2018)
Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan
Hardtdegen, Alexander
Hoffmann-Eifert, Susanne
Jungemann, Christoph
Microscopic simulation of RF noise in junctionless nanowire transistors
Journal Article (2018)
Noei, Maziar (Corresponding author)
Jungemann, Christoph
Investigation of the Dyakonov-Shur instability for THz wave generation based on the Boltzmann transport equation
Contribution to a book, Journal Article (2018)
Kargar, Zeinab (Corresponding author)
Linn, Tobias Sebastian
Jungemann, Christoph
Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET
Journal Article (2018)
Jabs, Dominic (Corresponding author)
Bach, Karl Heinz
Jungemann, Christoph
Small-signal analysis of silicon nanowire transistors based on a Poisson/Schrödinger/Boltzmann solver
Contribution to a book, Contribution to a conference proceedings (2017)
Noei, Maziar (Corresponding author)
Ruic, Dino
Jungemann, Christoph
Simulation of THz emission by plasma waves in GaAs devices based on the Boltzmann transport equation
Contribution to a book, Contribution to a conference proceedings (2017)
Kargar, Zeinab (Corresponding author)
Ruic, Dino
Linn, Tobias Sebastian
Jungemann, Christoph
Transport modeling for plasma waves in THz devices
Contribution to a conference proceedings (2017)
Jungemann, Christoph
Kargar, Zeinab
Ruic, Dino
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode
Contribution to a book, Contribution to a conference proceedings (2017)
Stehling, Wilhelm
Abbaspour, Elhameh
Jungemann, Christoph
Menzel, Stephan
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
Contribution to a book, Contribution to a conference proceedings (2017)
Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan (Corresponding author)
Jungemann, Christoph (Corresponding author)
Simulation of exciton effects in OLEDs based on the master equation
Contribution to a book, Contribution to a conference proceedings (2017)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation
Journal Article (2017)
Kargar, Zeinab (Corresponding author)
Ruic, Dino
Linn, Tobias Sebastian
Jungemann, Christoph
Analysis of trap-induced noise in organic light-emitting diodes based on the master equation
Contribution to a book, Contribution to a conference proceedings (2017)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
Simulation of THz emission based on plasma wave excitation
Contribution to a book, Contribution to a conference proceedings (2017)
Kargar, Zeinab (Corresponding author)
Ruic, Dino
Linn, Tobias Sebastian
Jungemann, Christoph
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
Journal Article (2017)
Chevalier, Pascal (Corresponding author)
Schroter, Michael
Bolognesi, Colombo R.
d'Alessandro, Vincenzo
Alexandrova, Maria
Bock, Josef
Flickiger, Ralf
Fregonese, Sebastien
Heinemann, Bernd
Jungemann, Christoph
Lovblom, Rickard
Maneux, Cristell
Ostinelli, Olivier
Pawlak, Andreas
Rinaldi, Niccolo
Rucker, Holger
Wedel, Gerald
Zimmer, Thomas
Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit
Journal Article (2017)
Kamrani, Mohammad Hamed
Jabs, Dominic
d'Alessandro, Vincenzo
Rinaldi, Niccolo
Jacquet, Thomas
Maneux, Cristell
Zimmer, Thomas
Aufinger, Klaus
Jungemann, Christoph (Corresponding author)
A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs
Journal Article (2017)
Kamrani, Mohammad Hamed
Jabs, Dominic
d'Alessandro, Vincenzo
Rinaldi, Niccolo
Aufinger, Klaus
Jungemann, Christoph (Corresponding author)
Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection
Journal Article (2016)
Jungemann, Christoph (Corresponding author)
Linn, Tobias Sebastian
Bittner, K.
Brachtendorf, H.-G.
The EU DOTSEVEN Project: Overview and Results
Contribution to a book, Contribution to a conference proceedings (2016)
Schroter, M.
Boeck, J.
d'Alessandro, V.
Fregonese, S.
Heinemann, B.
Jungemann, Christoph (Corresponding author)
Liang, W.
Kamrani, Mohammad Hamed
Mukherjee, A.
Pawlak, A.
Pfeiffer, U.
Rinaldi, N.
Sarmah, N.
Zimmer, T.
Wedel, G.
Numerical Capacitance Analysis of Single-Layer OLEDs Based on the Master Equation
Journal Article (2016)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
Physics-based hot-carrier degradation model for SiGe HBTs
Contribution to a book, Contribution to a conference proceedings (2016)
Kamrani, Mohammad Hamed (Corresponding author)
Jabs, Dominic
d'Alessandro, Vincenzo
Rinaldi, Niccolo
Jungemann, Christoph
Noise simulation of bipolar organic semiconductor devices based on the master equation
Contribution to a book, Contribution to a conference proceedings (2016)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
A self-consistent solution of the poisson and Boltzmann equations for electrons in graphene with a deterministic approach
Contribution to a book, Contribution to a conference proceedings (2016)
Dieball, Oliver (Corresponding author)
Kargar, Zeinab (Corresponding author)
Ruic, Dino
Jungemann, Christoph
KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices
Contribution to a book, Contribution to a conference proceedings (2016)
Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan (Corresponding author)
Jungemann, Christoph (Corresponding author)
Numerical investigation of junctionless nanowire transistors using a Boltzmann/Schrödinger/Poisson full Newton-Raphson solver
Contribution to a book, Contribution to a conference proceedings (2016)
Noei, Maziar (Corresponding author)
Jungemann, Christoph
Investigation of Transport Modeling for Plasma Waves in THz Devices
Journal Article (2016)
Kargar, Zeinab (Corresponding author)
Linn, Tobias Sebastian
Ruic, Dino
Jungemann, Christoph
Simulation of Plasma Resonances in MOSFETs for THz-Signal Detection
Contribution to a book, Contribution to a conference proceedings (2016)
Jungemann, Christoph (Corresponding author)
Bittner, K. (Corresponding author)
Brachtendorf, H. G. (Corresponding author)
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach
Journal Article (2016)
Ruic, Dino (Corresponding author)
Jungemann, Christoph
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
Journal Article (2016)
Rupp, K. (Corresponding author)
Jungemann, Christoph (Corresponding author)
Hong, S.-M.
Bina, M.
Grasser, T.
Jüngel, A.
Strain-modulated electronic and thermal transport properties of two-dimensional O-silica
Journal Article (2016)
Han, Yang
Qin, Guangzhao
Jungemann, Christoph (Corresponding author)
Hu, Ming (Corresponding author)
Langevin-Boltzmann approach for fluctuations in a hot-electron-hot-phonon system
Contribution to a book, Contribution to a conference proceedings (2015)
Ramonas, Mindaugas (Corresponding author)
Jungemann, Christoph
A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations for GaAs devices by a deterministic solver
Contribution to a book, Contribution to a conference proceedings (2015)
Kargar, Zeinab (Corresponding author)
Ruić, Dino
Jungemann, Christoph
Small signal and microscopic noise simulation of an nMOSFET by a self-consistent, semi-classical and deterministic approach
Contribution to a book, Contribution to a conference proceedings (2015)
Ruic, Dino (Corresponding author)
Jungemann, Christoph
Electrothermal simulation of SiGe HBTs and investigation of experimental extraction methods for junction temperature
Contribution to a book, Contribution to a conference proceedings (2015)
Kamrani, Mohammad Hamed (Corresponding author)
Kochubey, Tatiana
Jabs, Dominic
Jungemann, Christoph
Simulation of bipolar organic semiconductor devices based on the master equation including generation and recombination
Contribution to a book, Contribution to a conference proceedings (2015)
Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph
The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations
Contribution to a book, Contribution to a conference proceedings (2015)
Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan
Jungemann, Christoph
Field-induced detrapping in doped organic semiconductors with Gaussian disorder and different carrier localizations on host and guest sites
Journal Article (2015)
Scheb, M.
Zimmermann, Christoph
Jungemann, Christoph
Entwicklung der Simulation in der Mikro-/Nanoelektronik
Journal Article (2015)
Jungemann, Christoph (Corresponding author)
A Robust Algorithm for Microscopic Simulation of Avalanche Breakdown in Semiconductor Devices
Journal Article (2015)
Jabs, Dominic (Corresponding author)
Jungemann, Christoph (Corresponding author)
Bach, Karl Heinz (Corresponding author)
Simulation of electronic noise in disordered organic semiconductor devices based on the master equation
Journal Article (2015)
Jungemann, Christoph (Corresponding author)
A Deterministic approach to noise in a non-equilibrium electron-phonon system based on the Boltzmann equation
Journal Article (2015)
Ramonas, Mindaugas
Jungemann, Christoph
Numerical aspects of noise simulation in MOSFETs by a Langevin-Boltzmann solver
Journal Article (2015)
Ruic, Dino
Jungemann, Christoph
A semi-distributed method for inductor de-embedding
Contribution to a book, Contribution to a conference proceedings (2014)
Dang, J. (Corresponding author)
Noculak, Achim
Korndörfer, F.
Jungemann, Christoph
Meinerzhagen, B.
A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25μm CMOS technology
Contribution to a book, Contribution to a conference proceedings (2014)
Dang, J. (Corresponding author)
Noculak, A.
Haddadinejad, S.
Jungemann, Christoph
Meinerzhagen, B.
Validity of Macroscopic Noise Models in the case of High-Frequency Bipolar Transistors
Contribution to a conference proceedings (2014)
Jungemann, Christoph
Avalanche Breakdown of pn-junctions - Simulation by Spherical Harmonics Expansion of the Boltzmann Transport Equation
Contribution to a book, Contribution to a conference proceedings (2014)
Jabs, Dominic
Jungemann, Christoph
DC, AC and Noise Simulation of Organic Semiconductor Devices based on the Master Equation
Contribution to a book, Contribution to a conference proceedings (2014)
Jungemann, Christoph
Zimmermann, Christoph
Interface states charges as a vital component for HC degradation modeling
Contribution to a conference proceedings (2014)
Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
Carniello, S.
Park, J. M.
Enichlmair, H.
Karner, M.
Kernstock, C.
Seebacher, E.
Minixhofer, R.
Ceric, H.
Grasser, T.
Technology Computer Aided Design
Contribution to a book (2013)
Esseni, David
Jungemann, Christoph
Lorenz, Jürgen
Palestri, Pierpaolo
Sangiorgi, Enrico
Selmi, Luca
Spherical Harmonics Solver for Coupled Hot-Electron : Hot-Phonon System
Contribution to a book, Contribution to a conference proceedings (2013)
Ramonas, Mindaugas (Corresponding author)
Jungemann, Christoph
A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices
Contribution to a book, Contribution to a conference proceedings (2013)
Ruic, Dino (Corresponding author)
Jungemann, Christoph
Investigation of Electronic Noise in THz SiGe HBTs by Microscopic Simulation
Contribution to a book, Contribution to a conference proceedings (2013)
Jungemann, Christoph (Corresponding author)
Hong, Sung-Min
Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices
Contribution to a conference proceedings, Journal Article (2013)
Jungemann, Christoph (Corresponding author)
Pham, A.-T.
Hong, S.-M.
Smith, L.
Meinerzhagen, B.
Comparison of noise predictions by commercial TCAD device simulator to results from a spherical harmonics expansion solver
Contribution to a book, Contribution to a conference proceedings (2012)
Dinh, T. V.
Klaassen, D. B. M.
Vanhoucke, T.
Gridelet, E.
Mertens, H.
van Dalen, R.
Magnee, P. H. C.
Ramonas, Mindaugas
Jungemann, Christoph
Systematic Compact Modeling of Correlated Noise in Bipolar Transistors
Journal Article (2012)
Herricht, Jörg
Sakalas, Paulius
Ramonas, Mindaugas
Schroter, Michael
Jungemann, Christoph
Mukherjee, Anindya
Moebus, Kai Erik
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation
Contribution to a conference proceedings (2012)
Rupp, K.
Jungemann, Christoph
Bina, M.
Jüngel, A.
Grasser, T.
A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs
Journal Article (2012)
Kai, Zhao
Jungemann, Christoph
Xiao-Yan, Liu
Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation
Contribution to a book, Contribution to a conference proceedings (2012)
Tyaginov, Stanislav
Starkov, Ivan
Triebl, Oliver
Karner, M.
Kernstock, Ch.
Jungemann, Christoph
Enichlmair, Hubert
Park, J. M.
Grasser, Tibor
Analytical solutions of a spatially homogeneous Boltzmann equation for cyclostationary noise including generation/recombination
Contribution to a book, Contribution to a conference proceedings (2012)
Jungemann, Christoph
Deterministic Simulation of 3D and Quasi-2D Electron and Hole Systems in SiGe Devices
Contribution to a book, Contribution to a conference proceedings (2012)
Jungemann, Christoph
Pham, Anh-Tuan
Hong, Sung-Min
Meinerzhagen, Bernd
Quantum simulations of electrostatics in si cylindrical junctionless nanowire nfets and pfets with a homogeneous channel including strain and arbitrary crystallographic orientations
Contribution to a conference proceedings, Journal Article (2012)
Anh-Tuan Pham
Soree, Bart
Magnus, Wim
Jungemann, Christoph
Meinerzhagen, Bernd
Pourtois, Geoffrey
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Contribution to a book, Contribution to a conference proceedings (2011)
Pham, Anh-Tuan
Soree, B.
Magnus, W.
Jungemann, Christoph
Meinerzhagen, B.
Pourtois, G.
Numerical Modeling of Noise and Transport in SOI Devices
Contribution to a book, Contribution to a conference proceedings (2011)
Meinerzhagen, Bernd
Pham, Anh-Tuan
Hong, Sung-Min
Jungemann, Christoph
Hot-carrier degradation caused interface state profile; Simulation versus experiment
Journal Article (2011)
Starkov, I. A.
Tyaginov, S. E.
Enichlmair, H.
Cervenka, J.
Jungemann, Christoph
Carniello, S.
Park, J. M.
Ceric, H.
Grasser, T.
An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion
Journal Article (2011)
Jin, Seong Hoon
Hong, Sung-Min
Jungemann, Christoph
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
Journal Article (2011)
Dinh, Thanh Viet
Hong, Sung-Min
Jungemann, Christoph
Deterministic Solvers for the Boltzmann Transport Equation
Book (2011)
Hong, Sung-Min
Pham, Anh-Tuan
Jungemann, Christoph
Impact of the carrier distribution function on hot-carrier degradation modeling
Contribution to a book, Contribution to a conference proceedings (2011)
Tyaginov, Stanislav
Starkov, Ivan
Jungemann, Christoph
Enichlmair, Hubert
Park, Jong-Mun
Grasser, Tibor
Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs
Contribution to a book, Contribution to a conference proceedings (2011)
Starkov, Ivan
Ceric, Hajdin
Enichlmair, Hubert
Jong-Mun Park
Tyaginov, Stanislav
Grasser, Tibor
Jungemann, Christoph
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
Contribution to a book, Contribution to a conference proceedings (2011)
Tyaginov, Stanislav
Starkov, Ivan
Triebl, Oliver
Ceric, Hajdin
Grasser, Tibor
Enichlmair, Hubert
Park, Jong-Mun
Jungemann, Christoph
Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET
Contribution to a book, Contribution to a conference proceedings (2011)
Kai Zhao
Jungemann, Christoph
Xiaoyan Liu
An analytical approach for physical modeling of hot-carrier induced degradation
Contribution to a conference proceedings, Journal Article (2011)
Tyaginov, S.
Starkov, I.
Enichlmair, H.
Jungemann, Christoph
Park, J. M.
Seebacher, E.
Orio, R.
Ceric, H.
Grasser, T.
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C-V characteristics, mobility, and ON current
Contribution to a conference proceedings, Journal Article (2011)
Pham, Anh-Tuan
Zhao, Qing-Tai
Jungemann, Christoph
Meinerzhagen, Bernd
Manti, Siegfried
Soree, Bart
Pourtois, Geoffrey
Physical and Electrical Performance Limits of High-Speed SiGeC HBTs-Part I: Vertical Scaling
Journal Article (2011)
Schröter, Michael
Wedel, Gerald
Heinemann, Bernd
Jungemann, Christoph
Krause, Julia
Chevalier, Pascal
Chantre, Alain
High-order spherical harmonics solution of the Boltzmann equation and noise modeling
Contribution to a book, Contribution to a conference proceedings (2010)
Jungemann, Christoph
Hong, Sung-Min
Matz, G.
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current
Contribution to a book, Contribution to a conference proceedings (2010)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers
Contribution to a book, Contribution to a conference proceedings (2010)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBTs
Contribution to a book, Contribution to a conference proceedings (2010)
Al-Sadi, M.
d'Alessandro, V.
Fregonese, S.
Hong, Sung-Min
Jungemann, Christoph
Maneux, C.
Marano, I.
Pakfar, A.
Rinaldi, N.
Sasso, G.
Schröter, M.
Sibaja-Hernandez, A.
Tavernier, C.
Wedel, G.
Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs
Contribution to a book, Contribution to a conference proceedings (2010)
Zhao, Kai
Hong, Sung-Min
Jungemann, Christoph
Han, Ru-Qi
A deterministic Boltzmann solver for GaAs devices based on the spherical harmonics expansion
Contribution to a book, Contribution to a conference proceedings (2010)
Bieder, J.
Hong, Sung-Min
Jungemann, Christoph
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices
Contribution to a book, Contribution to a conference proceedings (2010)
Hong, Sung-Min
Jungemann, Christoph
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode
Contribution to a book, Contribution to a conference proceedings (2010)
Riedlberger, E.
Keller, R.
Reisinger, H.
Gustin, W.
Spitzer, A.
Stecher, M.
Jungemann, Christoph
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations
Contribution to a book, Contribution to a conference proceedings (2010)
Starkov, I. A.
Tyaginov, S. E.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
Carniello, S.
Park, J. M.
Enichlmair, H.
Karner, M.
Kernstock, C.
Seebacher, E.
Minixhofer, R.
Ceric, H.
Grasser, T.
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
Contribution to a book, Contribution to a conference proceedings (2010)
Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
Carniello, S.
Park, J. M.
Enichlmair, H.
Karner, M.
Kernstock, C.
Seebacher, E.
Minixhofer, R.
Ceric, H.
Grasser, T.
Solving Boltzmann Transport Equation Without Monte-Carlo Algorithms : New Methods for Industrial TCAD Applications
Contribution to a book, Contribution to a conference proceedings (2010)
Meinerzhagen, Bernd
Pham, Anh-Tuan
Hong, Sung-Min
Jungemann, Christoph
Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects
Contribution to a book, Contribution to a conference proceedings (2010)
Matz, Gregor
Hong, Sung-Min
Jungemann, Christoph
Analysis of the IMOS Transistor with a Floating Body
Report (2010)
Kraus, R.
Jungemann, Christoph
A Deterministic Boltzmann Equation Solver Based on a Higher-Order Spherical Harmonics Expansion with Full-Band Effects
Journal Article (2010)
Hong, Sun-Ming
Matz, Gregor
Jungemann, Christoph
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors
Contribution to a conference proceedings, Journal Article (2010)
Dinh, Thanh Viet
Kraus, Rainer
Jungemann, Christoph
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
Contribution to a conference proceedings, Journal Article (2010)
Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
Carniello, S.
Park, J. M.
Enichlmair, H.
Karner, M.
Kernstock, C.
Seebacher, E.
Minixhofer, R.
Ceric, H.
Grasser, T.
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion
Journal Article (2010)
Hong, Sung-Min
Jungemann, Christoph
HC degradation model: interface state profile - simulations vs. experiment
Contribution to a conference proceedings (2010)
Starkov, I. A.
Tyaginov, S. E.
Enichlmair, H.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
Carniello, S.
Park, J. M.
Ceric, H.
Grasser, T.
Investigation of transport and noise in terahertz SiGe HBTs based on deterministic spherical harmonics expansion of the Boltzmann transport equation
Contribution to a conference proceedings (2010)
Jungemann, Christoph
Hong, Sung-Min
Electron transport in extremely scaled SiGe HBTs
Contribution to a book, Contribution to a conference proceedings (2009)
Hong, Sung-Min
Jungemann, Christoph
Investigation of the Vertical IMOS-Transistor by Device Simulation
Contribution to a book, Contribution to a conference proceedings (2009)
Kraus, Rainer
Jungemann, Christoph
A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFETs
Contribution to a book, Contribution to a conference proceedings (2009)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Impact ionization rates for strained SiGe
Contribution to a book, Contribution to a conference proceedings (2009)
Dinh, Thanh Viet
Jungemann, Christoph
Investigation of noise performance of double-gate MOSFETs by deterministic simulation of Boltzmann equation
Contribution to a book, Contribution to a conference proceedings (2009)
Hong, Sung-Min
Jungemann, Christoph
Investigation of Noise Performance of SiGe HBTs by Deterministic Simulation of Boltzmann Equation in Two-Dimensional Real Space
Contribution to a book, Contribution to a conference proceedings (2009)
Hong, Sung-Min
Jungemann, Christoph
Noise in Green Transistors (Small Slope Switches)
Contribution to a book, Contribution to a conference proceedings (2009)
Jungemann, Christoph
Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range
Contribution to a book, Contribution to a conference proceedings (2009)
Shimukovitch, A.
Sakalas, P.
Ramonas, M.
Schröter, M.
Jungemann, Christoph
Kraus, W.
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors
Contribution to a book, Contribution to a conference proceedings (2009)
Dinh, Thanh Viet
Kraus, Rainer
Jungemann, Christoph
Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress
Contribution to a book, Contribution to a conference proceedings (2009)
Riedlberger, E.
Jungemann, Christoph
Spitzer, A.
Stecher, M.
Gustin, W.
Oscillator Noise Analysis: Full Spectrum Evaluation Including Orbital Deviations
Contribution to a book, Contribution to a conference proceedings (2009)
Hong, Sung-Min
Jungemann, Christoph
Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS
Contribution to a book, Contribution to a conference proceedings (2009)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Modeling of piezoresistive coefficients in Si hole inversion layers
Contribution to a book, Contribution to a conference proceedings (2009)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
The Impact of Collisional Broadening on Noise in Silicon at Equilibrium
Contribution to a book, Contribution to a conference proceedings (2009)
Jungemann, Christoph
Nedjalkov, Mihail
On the feasibility of 500 GHz Silicon-Germanium HBTs
Contribution to a book, Contribution to a conference proceedings (2009)
Pawlak, A.
Schröter, M.
Krause, J.
Wedel, G.
Jungemann, Christoph
Accurate mobility and energy relaxation time models for SiGe HBTs numerical simulation
Contribution to a book, Contribution to a conference proceedings (2009)
Sasso, G.
Matz, G.
Jungemann, Christoph
Rinaldi, N.
Predictive TCAD support for NanoMOS compact model development
Conference Presentation (2009)
Meinerzhagen, Bernd
Pham, Anh-Tuan
Jungemann, Christoph
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
Journal Article (2009)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
Contribution to a conference proceedings, Journal Article (2009)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results
Journal Article (2009)
Sakalas, Paulius
Ramonas, Mindaugas
Schröter, Michael
Jungemann, Christoph
Shimukovitch, Artur
Kraus, Wolfgang
Impact ionization rates for strained Si and SiGe
Contribution to a conference proceedings, Journal Article (2009)
Dinh, Than Viet
Jungemann, Christoph
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
Journal Article (2009)
Hong, S.-M.
Jungemann, Christoph
Modeling of SiGe HBT Operation in Extreme Temperature Environment
Abstract, Contribution to a book, Contribution to a conference proceedings (2008)
Sakalas, P.
Ramonas, M.
Schröter, M.
Kittlaus, A.
Geissler, H.
Jungemann, Christoph
Shimukovitch, A.
High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage
Contribution to a book, Contribution to a conference proceedings (2008)
Krishnamohan, Tejas
Kim, Donghyun
Nishi, Yoshio
Saraswat, Krishna C.
Jungemann, Christoph
Deterministic simulation of SiGe HBTs based on the Boltzmann equation
Contribution to a book, Contribution to a conference proceedings (2008)
Hong, Sung-Min
Jungemann, Christoph
Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
Contribution to a book, Contribution to a conference proceedings (2008)
Krishnamohan, Tejas
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Saraswat, Krishna C.
Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport
Contribution to a book, Contribution to a conference proceedings (2008)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage
Contribution to a book, Contribution to a conference proceedings (2008)
Krishnamohan, Tejas
Kim, Donghyun
Dinh, Thanh Viet
Pham, Anh-Tuan
Meinerzhagen, Bernd
Jungemann, Christoph
Saraswat, Krishna C.
Advances in spherical harmonics solvers for the Boltzmann equation
Contribution to a book, Contribution to a conference proceedings (2008)
Jungemann, Christoph
Mobilty Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
Contribution to a book, Contribution to a conference proceedings (2008)
Krishnamohan, Tejas
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Saraswat, Krishna C.
A deterministic Boltzmann equation solver for two-dimensional semiconductor devices
Contribution to a book, Contribution to a conference proceedings (2008)
Hong, Sung-Min
Jungemann, Christoph
Bollhöfer, Matthias
Simulation of magnetotransport in nanoscale devices
Contribution to a book, Contribution to a conference proceedings (2008)
Hong, Sung-Min
Jungemann, Christoph
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
Contribution to a conference proceedings, Journal Article (2008)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
Contribution to a conference proceedings, Journal Article (2008)
Pham, A.-T.
Jungemann, J.
Klawitter, M.
Meinerzhagen, B.
Transport and Noise Calculations for Nanoscale Si Devices Based on the Langevin Boltzmann Equation Expanded with Spherical Harmonics
Journal Article (2008)
Jungemann, Christoph
A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization
Journal Article (2008)
Pham, Anh-Tuan
Meinerzhagen, Bernd
Jungemann, Christoph
Numerical Simulation of Electronic Noise in Silicon MOSFETs
Conference Presentation, Contribution to a conference proceedings (2007)
Jungemann, Christoph
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
Contribution to a book, Contribution to a conference proceedings (2007)
Fiegna, C.
Braccioli, M.
Brugger, S. C.
Bufler, F. M.
Dollfus, P.
Aubry-Fortuna, V.
Jungemann, Christoph
Meinerzhagen, Bernd
Palestri, P.
Galdin-Retailleau, S.
Sangiorgi, E.
Schenk, A.
Selmi, L.
A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization
Contribution to a conference proceedings (2007)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
A Deterministic Solver for the Langevin Boltzmann Equation Including the Pauli Principle
Contribution to a book, Contribution to a conference proceedings (2007)
Jungemann, Christoph
Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates
Contribution to a book, Contribution to a conference proceedings (2007)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Microscopic modeling of high frequency noise in SiGe HBTs
Contribution to a book, Contribution to a conference proceedings (2007)
Ramonas, Mindaugas
Sakalas, Paulius
Jungemann, Christoph
Schröter, Michael
Kraus, Wolfgang
Shimukovitch, Artur
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
Contribution to a book, Contribution to a conference proceedings (2007)
Pham, Anh-Tuan
Jungemann, Christoph
Klawitter, M.
Meinerzhagen, Bernd
Ballisticity of the linear response transport in nanometric silicon devices
Contribution to a book, Contribution to a conference proceedings (2007)
Jungemann, Christoph
Numerical modeling of electron noise in nanoscale Si devices
Contribution to a book, Contribution to a conference proceedings (2007)
Jungemann, Christoph
Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors
Contribution to a book, Contribution to a conference proceedings (2007)
Ramonas, Mindaugas
Jungemann, Christoph
Sakalas, Paulius
Schröter, Michael
Kraus, Wolfgang
Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems
Contribution to a book, Contribution to a conference proceedings (2007)
Jungemann, Christoph
Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
Contribution to a book, Contribution to a conference proceedings (2007)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
High Performance, Strained-Ge, Heterostructure p-MOSFETs
Contribution to a book, Contribution to a conference proceedings (2007)
Krishnamohan, Tejas
Kim, Donghyun
Jungemann, Christoph
Pham, Anh-Tuan
Meinerzhagen, Bernd
Nishi, Yoshio
Saraswat, Krishna C.
Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner
Contribution to a book, Contribution to a conference proceedings (2007)
Bach, K. H.
Liebmann, R.
Nawaz, M.
Jungemann, Christoph
Ungersboeck, Enzo
High Performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs
Contribution to a conference proceedings, Journal Article (2007)
Krishnamohan, T.
Jungemann, Christoph
Kim, Donghyun
Ungersboeck, E.
Selberherr, S.
Pham, Anh-Tuan.
Meinerzhagen, Bernd
Wong, P.
Nishi, Y.
Saraswat, K. C.
High-frequency noise in nanoscale metal oxide semiconductor field effect transistors
Journal Article (2007)
Navid, Reza
Jungemann, Christoph
Lee, Thomas H.
Dutton, Robert W.
Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator
Journal Article (2007)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
A Deterministic Approach to RF Noise in Silicon Devices based on the Langevin Boltzmann equation
Journal Article (2007)
Jungemann, Christoph
Modeling of High Frequency Noise in SiGe HBTs
Contribution to a book, Contribution to a conference proceedings (2006)
Sakalas, P.
Chakravorty, A.
Schröter, M.
Ramonas, M.
Herricht, J.
Shimukovitch, A.
Jungemann, Christoph
A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport
Abstract, Contribution to a book, Contribution to a conference proceedings (2006)
Jungemann, Christoph
Pham, Anh-Tuan
Meinerzhagen, Bernd
Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative
Contribution to a book, Contribution to a conference proceedings (2006)
Jungemann, Christoph
Meinerzhagen, Bernd
Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase
Contribution to a book, Contribution to a conference proceedings (2006)
Hagenbeck, R.
Decker, S.
Haibach, P.
Mikolajick, T.
Tempel, G.
Isler, M.
Jungemann, Christoph
Meinerzhagen, Bernd
A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies
Contribution to a book, Contribution to a conference proceedings (2006)
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs
Contribution to a book, Contribution to a conference proceedings (2006)
Krishnamohan, Tejas
Jungemann, Christoph
Kim, Donghyun
Ungersboeck, Enzo
Selberherr, Siegfried
Wong, Philip
Nishi, Yoshio
Saraswat, Krishna C.
Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs?
Contribution to a book, Contribution to a conference proceedings (2006)
Krishnamohan, Tejas
Kim, Donghyun
Jungemann, Christoph
Nishi, Yoshio
Saraswat, Krishna C.
Numerical simulation of RF noise in Si devices
Contribution to a book, Contribution to a conference proceedings (2006)
Jungemann, Christoph
Meinerzhagen, Bernd
Stable Discretization of the Langevin-Boltzmann Equation based on Spherical Harmonics, Box Integration and Maximum Entropy Dissipation Principle
Conference Presentation (2006)
Jungemann, Christoph
A linear response Monte Carlo algorithm for inversion layers and magnetotransport
Journal Article (2006)
Jungemann, Christoph
Pham, Anh-Tuan
Meinerzhagen, Bernd
Numerical modeling of RF noise in scaled MOS devices
Contribution to a conference proceedings, Journal Article (2006)
Jungemann, Christoph
Neinhüs, B.
Nguyen, C. D.
Scholten, A. J.
Tiemeijer, L. F.
Meinerzhagen, Bernd
A full band deterministic model for semiclassical carrier transport in semiconductors
Journal Article (2006)
Smirnov, S.
Jungemann, Christoph
High-Mobility Low Band-To-Band-Tunneling Strained-Germanium Double-Gate Heterostructure FETs: Simulations
Contribution to a book, Journal Article (2006)
Krishnamohan, Tejas
Kim, Donghyun
Nguyen, Chi Dong
Jungemann, Christoph
Nishi, Yoshio
Saraswat, Krishna C.
A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs
Contribution to a conference proceedings, Journal Article (2006)
Pham, Anh-Tuan
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd
Noise modeling in scaled MOSFET devices
Contribution to a conference proceedings, Journal Article (2006)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.
Do hot electrons cause excess noise?
Contribution to a conference proceedings, Journal Article (2006)
Jungemann, Christoph
Meinerzhagen, B.
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
Contribution to a conference proceedings, Journal Article (2006)
Pham, A. T.
Jungemann, Christoph
Nguyen, C. D.
Meinerzhagen, Bernd
Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle
Journal Article (2006)
Jungemann, Christoph
Pham, A. T.
Meinerzhagen, B.
Ringhofer, C.
Bollhöfer, M.
Über die Vernachlässigung von Beschleunigungseffekten in der Simulation von Siliziumbauelementen
Contribution to a book, Contribution to a conference proceedings (2005)
Jungemann, Christoph
Meinerzhagen, Bernd
Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study
Contribution to a book, Contribution to a conference proceedings (2005)
Neinhüs, B.
Jungemann, Christoph
Meinerzhagen, Bernd
Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs
Abstract, Contribution to a conference proceedings (2005)
Nguyen, Chi Dong
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Do hot electrons produce excess noise?
Contribution to a book, Contribution to a conference proceedings (2005)
Jungemann, Christoph
Meinerzhagen, Bernd
Nonparabolic macroscopic transport models for device simualtion based on bulk Monte Carlo data
Journal Article (2005)
Grasser, T.
Kosik, R.
Jungemann, Christoph
Kosina, H.
Selberherr, S.
On the High Frequency Limit of the Impedance Field Method for Si
Contribution to a book, Contribution to a conference proceedings (2005)
Jungemann, Christoph
Meinerzhagen, Bernd
A Frequency Domain Spherical Harmonics Solver for the Langevin Boltzmann Equation
Contribution to a book, Contribution to a conference proceedings (2005)
Jungemann, Christoph
Meinerzhagen, Bernd
Convergence of the Legendre Polynomial Expansion of the Boltzmann Equation for Nanoscale Devices
Contribution to a book, Contribution to a conference proceedings (2005)
Jungemann, Christoph
Bollhöfer, Matthias
Meinerzhagen, Bernd
Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium
Contribution to a book, Contribution to a conference proceedings (2005)
Jungemann, Christoph
Grasser, T.
Meinerzhagen, B.
Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation
Contribution to a book, Contribution to a conference proceedings (2005)
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, B.
Full-Band Monte-Carlo Simulation of sub-100 nm strained Si CMOS
Journal Article (2005)
Pham, A. T.
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd
Study of Charge Carrier Quantization in Strained Si-nMOSFETs
Contribution to a conference proceedings, Journal Article (2005)
Nguyen, C. D.
Pham, A. T.
Jungemann, Christoph
Meinerzhagen, B.
Impact ionization MOS (I-MOS)-Part II: experimental results
Journal Article (2005)
Gopalakrishnan, Kailash
Woo, Raymond
Jungemann, Christoph
Griffin, Peter B.
Plummer, James D.
Failure of Moments-Based Transport Models in Nanoscale Devices near Equilibrium
Journal Article (2005)
Jungemann, Christoph
Grasser, Tibor
Neinhüus, Burkhard
Meinerzhagen, Bernd
Close-in phase noise in integrated oscillators
Contribution to a book, Contribution to a conference proceedings (2004)
Navid, Reza
Jungemann, Christoph
Lee, Thomas H.
Dutton, Robert W.
Noise modeling of Si and SiGe devices
Contribution to a book, Contribution to a conference proceedings (2004)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd
An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation
Contribution to a book, Contribution to a conference proceedings (2004)
Grgec, Dalibor
Jungemann, Christoph
Nguyen, Chi Dong
Neinhüs, Burkhard
Meinerzhagen, Bernd
Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs
Contribution to a book, Contribution to a conference proceedings (2004)
Krishnamohan, Tejas
Jungemann, Christoph
Saraswat, Krishna C.
Advanced Transport Models for Sub-Micrometer Devices
Contribution to a book, Contribution to a conference proceedings (2004)
Grasser, T.
Jungemann, Christoph
Kosina, H.
Meinerzhagen, B.
Selberherr, S.
Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation
Contribution to a book, Contribution to a conference proceedings (2004)
Jungemann, Christoph
Neinhüs, B.
Nguyen, C. D.
Meinerzhagen, B.
Extraction of band offsets in Strained Si/Strained SiGe on relaxed SiGe dual-channel enhanced mobility structures
Contribution to a book, Contribution to a conference proceedings (2004)
Chleirigh, C. Ni
Jungemann, Christoph
Jung, J.
Olubuyide, O. O.
Hoyt, J. L.
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey
Abstract, Contribution to a book, Contribution to a conference proceedings (2004)
Nguyen, C. D.
Pham, A. T.
Jungemann, Christoph
Meinerzhagen, B.
Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation
Contribution to a book, Contribution to a conference proceedings (2004)
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
Dutton, Robert W.
A Legendre Polynomial Solver for the Langevin Boltzmann Equation
Abstract, Contribution to a book, Contribution to a conference proceedings (2004)
Jungemann, Christoph
Meinerzhagen, Bernd
Full-Band Monte-Carlo Simulation of sub-100 nm strained Si CMOS
Report (2004)
Pham, Anh-Tuan
Nguyen, Chi Dong
Jungemann, Christoph
Meinerzhagen, Bernd
Investigation of strained Si/SiGe devices by MC simulation
Contribution to a book, Journal Article (2004)
Jungemann, Christoph
Subba, N.
Goo, J. S.
Riccobene, C.
Xiang, Q.
Meinerzhagen, B.
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey
Journal Article (2004)
Nguyen, C. D.
Pham, A. T.
Jungemann, Christoph
Meinerzhagen, B.
Investigation of Compact Models for RF Noise in SiGe HBTs by Hydrodynamic Device Simulation
Journal Article (2004)
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
Dutton, Robert W.
A Legendre Polynomial Solver for the Langevin Boltzmann Equation
Journal Article (2004)
Jungemann, Christoph
Meinerzhagen, Bernd
A Non-Parabolic Six Moments Model for the Simulation of sub-100nm Semiconductor Devices
Journal Article (2004)
Grasser, Tibor
Korsik, Robert
Jungemann, Christoph
Meinerzhagen, Bernd
Kosina, Hans
Selberherr, Siegfried
Numerical Simulation of Strained Si/SiGe Devices : The Hierarchical Approach
Contribution to a conference proceedings, Journal Article (2004)
Meinerzhagen, B.
Jungemann, Christoph
Neinhüs, B.
Bartels, M.
Maximum drive current scaling properties of strained Si NMOS in the deca-nanometer regime
Contribution to a book, Contribution to a conference proceedings (2003)
Jungemann, Christoph
Meinerzhagen, B.
A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si xGe (1-x)/Si channel PMOSFET
Contribution to a book, Contribution to a conference proceedings (2003)
Krishnamohan, T.
Jungemann, Christoph
Saraswat, K. C.
Hydrodynamic Modeling of RF Noise for Silicon-Based Devices
Contribution to a book, Journal Article (2003)
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
A Simple Compact Model for Terminal Current Noise of SiGe HBTs
Contribution to a book, Contribution to a conference proceedings (2003)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.
Hydrodynamic Modeling of RF Noise in CMOS Devices
Contribution to a book, Contribution to a conference proceedings (2003)
Jungemann, Christoph
Neinhüs, B.
Nguyen, C. D.
Meinerzhagen, B.
Dutton, R. W.
Scholten, A. J.
Tiemeijer, L. F.
On the Diffusion Noise Sources of the Impedance Field Method
Contribution to a book, Contribution to a conference proceedings (2003)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.
MC Simulation of Strained Si/SiGe Devices
Contribution to a book, Contribution to a conference proceedings (2003)
Jungemann, Christoph
Meinerzhagen, B.
Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs
Contribution to a book, Contribution to a conference proceedings (2003)
Oh, Tae-Young
Jungemann, Christoph
Dutton, R. W.
Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale pMOSFETs
Contribution to a book, Contribution to a conference proceedings (2003)
Nguyen, C. D.
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.
Sedlmeier, J.
Molzer, W.
Hierarchical device simulation : the Monte-Carlo perspective
Book (2003)
Jungemann, Christoph
Meinerzhagen, Bernd
Efficient full-band Monte Carlo simulation for device engineering
Book (2003)
Jungemann, Christoph
Evaluation of Compact Noise Modeling for Si/SiGe HBTs Based on Hierarchical Hydrodynamic Noise Simulation
Contribution to a conference proceedings, Journal Article (2003)
Bartels, M.
Neinhüs, B.
Jungemann, Christoph
Meinerzhagen, B.
In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations
Contribution to a conference proceedings, Journal Article (2003)
Jungemann, Christoph
Meinerzhagen, Bernd
Noise analysis for a SiGe HBT by hydrodynamic device simulation
Contribution to a book, Contribution to a conference proceedings (2002)
Jungemann, Christoph
Neinhüs, Burkard
Meinerzhagen, Bernd
Efficient Monte Carlo simulation of tunnel currents in MOS structures
Contribution to a book, Contribution to a conference proceedings (2002)
Grgec, D.
Vexler, M. I.
Jungemann, Christoph
Meinerzhagen, Bernd
Quantum Correction of Electron Density for Monte Carlo Device Simulation
Contribution to a book, Contribution to a conference proceedings (2002)
Grgec, D.
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd
Numerische Simulation des Rauschverhaltens eines Si/SiGe-Heterobipolartransistors basierend auf der Hierarchischen Numerischen Bauelementsimulation
Contribution to a book, Contribution to a conference proceedings (2002)
Bartels, M.
Neinhüs, Burkhard
Jungemann, Christoph
Decker, S.
Meinerzhagen, Bernd
In-advance CPU time analysis for Monte Carlo device simulations
Contribution to a book, Contribution to a conference proceedings (2002)
Jungemann, Christoph
Meinerzhagen, Bernd
Hierarchical Numerical Simulation exemplified for SiGe Heterojunction Bipolar Transistors
Contribution to a book, Contribution to a conference proceedings (2002)
Meinerzhagen, Bernd
Jungemann, Christoph
Neinhüs, Burkhard
Bartels, M.
DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
Contribution to a book, Contribution to a conference proceedings (2002)
Neinhüs, Burkhard
Jungemann, Christoph
Meinerzhagen, Bernd
Compact modeling of drain and gate current noise for RF CMOS
Contribution to a book, Contribution to a conference proceedings (2002)
Scholten, A. J.
Tiemeijer, L. F.
van Langevelde, R.
Havens, R. J.
Venezia, V. C.
Zegers-van Duijnhoven, A. T. A.
Neinhüs, Burkhard
Jungemann, Christoph
Klaassen, D. B. M.
On the Applicability of Nonself-Consistent Monte Carlo Device Simulations
Journal Article (2002)
Jungemann, Christoph
Meinerzhagen, Bernd
Hierarchical 2-D DD and HD Noise Simulations of Si and SiGe Devices : Part I: Theory
Journal Article (2002)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices : Part II: Results
Journal Article (2002)
Jungemann, Christoph
Neinhüs, B.
Decker, S.
Meinerzhagen, Bernd
Modeling of the Stochastic Noise of Monte Carlo Device Simulations
Abstract, Contribution to a conference proceedings (2001)
Jungemann, Christoph
Meinerzhagen, Bernd
Hierarchical 2D RF Noise Simulation of Si and SiGe Devices by Langevin-type DD and HD Models based on MC Generated Noise Parameters
Contribution to a book, Contribution to a conference proceedings (2001)
Jungemann, Christoph
Neinhüs, Burkhard
Decker, S.
Meinerzhagen, Bernd
Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs
Contribution to a book, Contribution to a conference proceedings (2001)
Jungemann, Christoph
Nguyen, C. D.
Neinhüs, Burkhard
Decker, S.
Meinerzhagen, Bernd
A Methodology for Consistent MC HD and DD Simulations of Submicrometer NMOSFETs
Contribution to a conference proceedings (2001)
Jungemann, Christoph
Grgec, D.
Meinerzhagen, B.
2D Hierarchical Radio-Frequency Noise Modelling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources
Contribution to a book, Contribution to a conference proceedings (2001)
Decker, S.
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
An Accurate and Efficient Methodology for RF Noise Simulations of nm-scale MOSFETs Based on Langevin-type Drift-diffusion Model
Contribution to a book, Contribution to a conference proceedings (2001)
Decker, S.
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
Comparative Study of Electron Transit Times Evaluated by DD HD and MC Device Simulation for a SiGe HBT
Journal Article (2001)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd
Analysis of the Stochastic Error of Stationary Monte Carlo Device Simulations
Journal Article (2001)
Jungemann, Christoph
Meinerzhagen, Bernd
Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation
Abstract, Contribution to a book, Contribution to a conference proceedings (2000)
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd
Investigation of High Frequency Noise in a SiGe Heterobipolar Transistor Based on Shockleys Impedance Field Method and the Hydrodynamic Model
Contribution to a book, Contribution to a conference proceedings (2000)
Decker, S.
Neinhüs, Burkhard
Heinemann, B.
Jungemann, Christoph
Meinerzhagen, Bernd
Efficiency and Stochastic Error of Monte Carlo Device Simulations
Contribution to a book, Contribution to a conference proceedings (2000)
Jungemann, Christoph
Meinerzhagen, Bernd
Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation
Contribution to a book, Contribution to a conference proceedings (2000)
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe
Contribution to a book, Contribution to a conference proceedings (2000)
Jungemann, Christoph
Heinemann, B.
Tittelbach-Helmrich, K.
Meinerzhagen, Bernd
A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities
Contribution to a book, Contribution to a conference proceedings (2000)
Neinhüs, Burkhard
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd
Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile
Contribution to a conference proceedings, Journal Article (2000)
Jungemann, Christoph
Keith, Stefan
Meinerzhagen, Bernd
Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm
Contribution to a book, Contribution to a conference proceedings (1999)
Jungemann, Christoph
Meinerzhagen, Bernd
Full-Band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
Contribution to a book, Contribution to a conference proceedings (1999)
Keith, S.
Jungemann, Christoph
Decker, S.
Neinhüs, Burkhard
Bartels, M.
Meinerzhagen, Bernd
Efficient Full-Band Monte Carlo Simulation of Silicon Devices
Journal Article (1999)
Jungemann, Christoph
Keith, Stefan
Bartels, Martin
Meinerzhagen, Bernd
On the Number of Fast Interface States of Standard CMOS Technologies
Journal Article (1999)
Jungemann, Christoph
Meinerzhagen, Bernd
Eller, M.
Hall Factors of Si NMOS Inversion Layers for MAGFET Modeling
Journal Article (1999)
Jungemann, Christoph
Dudenbostel, D.
Meinerzhagen, Bernd
Full Band Monte-Carlo Device Simulation of 0.1-0.5 mum Strained-Si P MOSFETs
Contribution to a book, Contribution to a conference proceedings (1998)
Keith, S.
Jungemann, Christoph
Meinerzhagen, Bernd
Full-band Monte Carlo simulation of a 0.12c mu m-Si-PMOSFET with and without a strained SiGe-channel
Contribution to a book, Contribution to a conference proceedings (1998)
Jungemann, Christoph
Keith, S.
Meinerzhagen, Bernd
On The Modeling Of CV Data For State Of The Art CMOS Technologies: Do We Need To Include Fast Interface States?
Contribution to a book, Contribution to a conference proceedings (1998)
Jungemann, Christoph
Meinerzhagen, Bernd
Efficient Methods for Hall Factor and Transport Coefficient Evaluation for Electrons and Holes in Si and SiGe Based on a Full-Band Structure
Abstract, Contribution to a book, Contribution to a conference proceedings (1998)
Jungemann, Christoph
Bartels, M.
Keith, S.
Meinerzhagen, Bernd
Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible?
Journal Article (1998)
Jungemann, Christoph
Meinerzhagen, Benrd
Decker, S.
Keith, Stefan
Yamaguchi, S.
Goto, H.
Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors
Journal Article (1998)
Goto, Hiroshi
Yamaguchi, Seiichiro
Jungemann, Christoph
High Performance Full-Band Monte Carlo Device Simulator FALCON
Abstract, Contribution to a conference proceedings (1997)
Yamaguchi, S.
Jungemann, Christoph
Goto, H.
A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs
Contribution to a book, Contribution to a conference proceedings (1997)
Graf, P.
Bufler, F. M.
Meinerzhagen, Bernd
Jungemann, Christoph
Investigation of the Influence of Impact Ionization Feedback on the Spatial Distribution of Hot Carriers in an NMOSFET
Contribution to a book, Contribution to a conference proceedings (1997)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors
Contribution to a book, Contribution to a conference proceedings (1997)
Meinerzhagen, Bernd
Jungemann, Christoph
Decker, S.
Keith, S.
Yamaguchi, S.
Goto, H.
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
Contribution to a book, Contribution to a conference proceedings (1997)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
Parameter Extraction of Hydrodynamic Model by Using Fullband Monte Carlo Simulator
Journal Article (1997)
Kanata, H.
Jungemann, Christoph
Satoh, S.
Accurate Prediction of Hot-Carrier Effects for a Deep Sub-Mu-M CMOS Technology-Based on Inverse Modeling and Full Band Monte-Carlo Device Simulation
Contribution to a book, Contribution to a conference proceedings (1996)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
Efficient Full Band Monte Carlo Hot Carrier Simulation for Silicon Devices
Contribution to a book, Contribution to a conference proceedings (1996)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation
Contribution to a book, Contribution to a conference proceedings (1996)
Jungemann, Christoph
Decker, S.
Thoma, R.
Eng, W. L.
Goto, H.
Is there experimental evidence for a difference between Surface and Bulk Impact Ionization in Silicon
Contribution to a book, Contribution to a conference proceedings (1996)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
Journal Article (1996)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
On the Accuracy and Efficiency of Substrate Current Calculations for Sub-$mu$m n-MOSFETs
Journal Article (1996)
Jungemann, Christoph
Yamaguchi, S.
Goto, H.
Phase Space Multiple Refresh: a General Purpose Statistical Enhancement Technique for Monte Carlo Device Simulation
Journal Article (1996)
Jungemann, Christoph
Decker, S.
Thoma, R.
Engl, W.-L.
Goto, H.
Effects of band structure and phonon models on hot electron transport in silicon
Journal Article (1996)
Jungemann, Christoph
Keith, Stefan
Bufler, F. M.
Meinerzhagen, Bernd
A soft threshold lucky electron model for efficient and accurate numerical device simulation
Journal Article (1996)
Jungemann, Christoph
Thoma, R.
Engl, W. L.
On the influence of band structure and scattering rates on hot electron modeling
Contribution to a book, Contribution to a conference proceedings (1995)
Jungemann, Christoph
Keith, S.
Meinerzhagen, Bernd
Engl, W. L.
A Soft Threshhold Lucky Electron model improved for Device Simulations under low voltage conditions
Contribution to a book, Contribution to a conference proceedings (1995)
Jungemann, Christoph
Thoma, R.
Meinerzhagen, Bernd
Engl, W. L.
Methoden zur Simulation hochenergetischer Elektronen in Ultrakurzkanaltransistoren
Dissertation / PhD Thesis (1995)
Jungemann, Christoph
New highly efficient method for the analysis of correlation functions based on a spherical harmonics expansion of the BTEs Greens function
Abstract, Contribution to a conference proceedings (1994)
Jungemann, Christoph
Graf, P.
Zylka, G.
Thoma, R.
Engl, W. L.
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs
Contribution to a book, Contribution to a conference proceedings (1994)
Bork, I.
Jungemann, Christoph
Meinerzhagen, Bernd
Engl, W. L.
A comparison of numerical-solutions of the Boltzmann transport-equation for high-energy electron-transport silicon
Journal Article (1994)
Abramo, Antonio
Baudry, L.
Brunetti, Rosella
Castagne, Rene
Charef, M.
Dessenne, F.
Dollfus, Philippe
Dutton, Robert W.
Engl, Walter
Fauquembergue, R.
Fiegna, Claudio
Fischetti, Massimo V.
Galdin, Sylvia
Goldsman, Neil
Hackel, Michael
Hamaguchi, Chihiro
Hess, Karl
Hennacy, Ken
Hesto, Patrice
Higman, Jak M.
Iizuka, Takahiro
Jungemann, Christoph
Kamakura, Y.
Kosina, Hans
Kunikiyo, T.
Laux, Steven E.
Lim, Hongchin Lin
Maziar, Christine
Mizuno, Hiroyuki
Peifer, H. J.
Ramaswamy, Sridhar
Sano, Nobuyuki
Scorbohaci, Paul G.
Selberherr, Siegfried
Takenaka, M.
Tang, Ting-wei
Taniguchi, Kenji
Thobel, J. L.
Thoma, R.
Tomizawa, Kazutaka
Tomipzawa, Masaaki
Vogelsang, Thomas
Wang, Shiuh-Luen
Wang, Xiaolin
Yao, Chiang-Sheng
Yoder, P. D.
Yoshii, Akira
An improved lucky electron model suitable for simulation of silicon NMOSFETs with low supply voltage
Contribution to a conference proceedings (1993)
Jungemann, Christoph
Thoma, R.
Ekel, M.
Engl, W. L.
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
Journal Article (1993)
Jungemann, Christoph
Emunds, A.
Engl, W. L.
A Consistent Model for Low and High-Field Electron Transport in Homogeneous Silicon Inversion Layers
Abstract, Contribution to a book, Contribution to a conference proceedings (1991)
Emunds, A.
Jungemann, Christoph
Engl, W.
Einfluss der Subbandbesetzung auf die Transporteigenschaften quasi 2-dimensionaler Systeme
Diploma Thesis (1990)
Jungemann, Christoph