Person
Prof. Dr.-Ing.Christoph Jungemann
UniversitätsprofessorInstitutsleiter
Address
Building: 3020
Room: A1.14
Kackertstr. 15-17
52072 Aachen
Curriculum Vitae
Curriculum Vitae
1984 |
Abitur at the Augustin-Wibbelt-Gymnasium in Warendorf |
1984-1990 |
Study of electrical engineering at RWTH |
1990 |
Dlploma in electrical engineering specializing in solid-state electroni |
1990-1995 |
Research Mitarbeiter am Institut für Theoretische Elektrotechnik der RWTH |
1995 |
Doctorate to Dr.-Ing. |
1995-1997 |
Component engineer in the research and development department of Fujitsu, Kawasaki, Japan |
1997-2002 |
Senior engineer at the Institute for Theoretical Electrical Engineering and Microelectronics at the University of Bremen |
2001 |
Habilitation at the University of Bremen with the license to teach theoretical electrical engineering |
2002-2003 |
Scientific rasearcher at the Center for Integrated System, Stanford University, USA |
2003-2006 |
Research assistant at the Institute for Network Theory and Circuit Technology at the TU Braunschweig |
2003 |
Re-habilitation at the TU Braunschweig with the license to teach theoretical electrical engineering |
2006-2011 |
University professor for microelectronics at the University of the Federal Armed Forces in Munich and head of the institute for microelectronics and circuit technology |
2006 |
IEEE Paul-Rappaport-Award for 2005 |
2007-2010 |
Co-editor of the IEEE Transactions on Electron Devices |
Seit 2011 |
University professor for theoretical electrical engineering at RWTH and head of the Institute for theoretical electrical engineering |
2014-2020 |
Member of the technical committee for electrical engineering of the accreditation agency ASIIN |
2017 |
Teaching award of the RWTH |
2017-2021 |
Dean of Studies for the Faculty of Electrical Engineering and Information Technology at RWTH |
2019 |
Appointment to IEEE Fellow |
Publications
Title | Author(s) |
---|---|
Stabilization of the Time-Dependent Drift-Diffusion Model for Fermi-Dirac Statistics Contribution to a book, Contribution to a conference proceedings (2023) | Linn, Tobias Flasskamp, Jan Jungemann, Christoph |
An Accurate k*p Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs Contribution to a book, Contribution to a conference proceedings (2023) | Renner, Max Linn, Tobias Jungemann, Christoph |
Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization Journal Article (2023) | Meng, Fanqi (Corresponding author) Walla, Frederik Kovalev, Sergey Deinert, Jan-Christoph Ilyakov, Igor Chen, Min Ponomaryov, Alexey Pavlov, Sergey G. Hübers, Heinz-Wilhelm Abrosimov, Nikolay V. Jungemann, Christoph (Corresponding author) Roskos, Hartmut G. (Corresponding author) Thomson, Mark D. (Corresponding author) |
Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation Contribution to a book, Contribution to a conference proceedings (2023) | Müller, Markus (Corresponding author) Krattenmacher, Mario Leenders, Hendrik Christoph Andre Hamzeloui, Sara Bolognesi, Colombo Jungemann, Christoph Schröter, Michael |
High-harmonic generation in p-doped Si by band non-parabolicity, energy-dependent relaxation and dopant photo-ionization Contribution to a book, Contribution to a conference proceedings (2023) | Meng, Fanqi Walla, Frederik Kovalev, Sergey Deinert, Jan-Christoph Ilyakov, Igor Chen, Min Ponomaryov, Alexey Pavlov, Sergey G. Hübers, Heinz-Wilhelm Abrosimov, Nikolay V. Jungemann, Christoph Roskos, Hartmut G. Thomson, Mark D. |
Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures Journal Article (2023) | Leenders, Hendrik Müller, Markus (Corresponding author) Jungemann, Christoph Schröter, Michael |
Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers Journal Article (2023) | Müller, Markus (Corresponding author) Leenders, Hendrik Christoph Andre (Corresponding author) Jungemann, Christoph (Corresponding author) Schröter, Michael (Corresponding author) |
Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses Journal Article (2023) | Jungemann, Christoph (Corresponding author) Thomson, M. D. Meng, F. Roskos, H. G. |
DC and Transient Microscopic Simulation of Nanowire NMOSFETs Contribution to a book, Contribution to a conference proceedings (2023) | Jungemann, Christoph (Corresponding author) Rippchen, Tobias Noei, Maziar Linn, Tobias Sebastian |
Spherical Harmonics Expansion and Multi-Scale Modeling Contribution to a book (2022) | Meinerzhagen, Bernd (Corresponding author) Jungemann, Christoph |
Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation Contribution to a book, Contribution to a conference proceedings (2022) | Jungemann, Christoph (Corresponding author) Noei, Maziar (Corresponding author) Linn, Tobias Sebastian (Corresponding author) |
Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures Contribution to a conference proceedings, Journal Article (2022) | Jungemann, Christoph (Corresponding author) Meng, F. Thomson, M. D. Roskos, H. G. |
Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses Journal Article (2022) | Meng, Fanqi (Corresponding author) Walla, Frederik ul-Islam, Qamar Pashkin, Alexej Schneider, Harald Jungemann, Christoph Thomson, Mark D. (Corresponding author) Roskos, Hartmut G. (Corresponding author) |
Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress Journal Article (2022) | Dieball, Oliver (Corresponding author) Rücker, Holger Heinemann, Bernd Jungemann, Christoph |
Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation Journal Article (2022) | Noei, Maziar (Corresponding author) Luckner, Paul Linn, Tobias Sebastian Jungemann, Christoph |
A Godunov-type Stabilization Scheme for Solving the Stationary and TransientBoltzmann Transport Equation Contribution to a book, Contribution to a conference proceedings (2021) | Luckner, Paul (Corresponding author) Leenders, Hendrik Christoph Andre Linn, Tobias Sebastian Noei, Maziar Jungemann, Christoph |
A Maximum Principle for Drift-Diffusion Equations and the Scharfetter-Gummel Discretization Contribution to a book, Contribution to a conference proceedings (2021) | Bittner, Kai (Corresponding author) Brachtendorf, Hans Georg Linn, Tobias Sebastian Jungemann, Christoph |
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs Contribution to a book, Contribution to a conference proceedings (2021) | Müller, Markus (Corresponding author) Schröter, M. Jungemann, Christoph Weimer, C. |
Special Issue on New Simulation Methodologies for Next-Generation TCAD Tools Book (2021) | Jungemann, Christoph (Editor) Bonani, Fabrizio (Editor) Cea, Stephen M. (Editor) Gnani, Elena (Editor) Hong, Sung-Min (Editor) Jin, Seonghoon (Editor) Liu, Xiaoyan (Editor) Moroz, Victor (Editor) Verhulst, Anne (Editor) |
High-harmonic generation from weakly p-doped Si pumped with intense THz pulses Contribution to a book, Contribution to a conference proceedings (2021) | Meng, Fanqi Walla, Frederik ul-Islam, Qamar Thomson, Mark D. Kovalev, Sergey Deinert, Jan-Christoph Ilyakov, Igor Chen, Mingshuai Ponomaryov, Alexey Pavlov, Sergey G. Hubers, Heinz-Wilhelm Abrosimov, Nikolay V. Jungemann, Christoph Roskos, Hartmut G. |
A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation Journal Article (2021) | Noei, Maziar (Corresponding author) Linn, Tobias Sebastian Luckner, Paul Jungemann, Christoph |
Foreword Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools" Contribution to a book, Journal Article (2021) | Jungemann, Christoph Bonani, Fabrizio Cea, Stephen M. Gnani, Elena Hong, Sung-Min Jin, Seonghoon Liu, Xiaoyan Moroz, Victor Verhulst, Anne |
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices Journal Article (2021) | Jech, Markus (Corresponding author) El-Sayed, Al-Moatasem (Corresponding author) Tyaginov, Stanislav (Corresponding author) Waldhör, Dominic (Corresponding author) Bouakline, Foudhil (Corresponding author) Saalfrank, Peter (Corresponding author) Jabs, Dominic (Corresponding author) Jungemann, Christoph (Corresponding author) Waltl, Michael (Corresponding author) Grasser, Tibor (Corresponding author) |
Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations Journal Article (2020) | Linn, Tobias Sebastian (Corresponding author) Bittner, Kai Brachtendorf, Hans Georg Jungemann, Christoph |
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space : Implications and Peculiarities Journal Article (2020) | Jech, Markus (Corresponding author) Rott, Gunnar Reisinger, Hans Tyaginov, Stanislav Rzepa, Gerhard Grill, Alexander Jabs, Dominic Jungemann, Christoph Waltl, Michael Grasser, Tibor |
Studying the switching variability in redox-based resistive switching devices Journal Article (2020) | Abbaspour, Elhameh (Corresponding author) Menzel, Stephan Jungemann, Christoph |
A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors Journal Article (2020) | Noei, Maziar (Corresponding author) Linn, Tobias Sebastian Jungemann, Christoph |
The Langevin-Boltzmann Equation for Noise Calculation Contribution to a book (2020) | Jungemann, Christoph (Corresponding author) |
First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation Contribution to a book, Contribution to a conference proceedings (2019) | Jech, M. Tyaginov, S. Kaczer, B. Franco, J. Jabs, Dominic Jungemann, Christoph Waltl, M. Grasser, T. |
On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability Contribution to a book, Contribution to a conference proceedings (2019) | Jungemann, Christoph (Corresponding author) Linn, Tobias Sebastian (Corresponding author) Kargar, Zeinab (Corresponding author) |
RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver Journal Article (2019) | Noei, Maziar (Corresponding author) Jungemann, Christoph |
Introducing a Cross-University Bachelor's Programme with Orientation Semester : Enabling a Permeable Academic Education System Contribution to a book, Contribution to a conference proceedings (2019) | Bragard, Michael (Corresponding author) Sube, Maike Schneider, Maike Jungemann, Christoph |
Transient Simulation of Current and Electrophosphorescence in Organic Light-Emitting Diodes Using the Master Equation Journal Article (2019) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
Master equation study of excitonic processes limiting the luminous efficacy in phosphorescent organic light-emitting diodes Journal Article (2019) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics : Part II: Theory Journal Article (2018) | Jech, Markus (Corresponding author) Ullmann, Bianka Rzepa, Gerhard Tyaginov, Stanislav Grill, Alexander Waltl, Michael Jabs, Dominic Jungemann, Christoph Grasser, Tibor |
Investigation of moments-based transport models applied to plasma waves and the Dyakonov-Shur instability Contribution to a book, Journal Article (2019) | Linn, Tobias Sebastian (Corresponding author) Kargar, Zeinab Jungemann, Christoph |
KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices Journal Article (2018) | Abbaspour, Elhameh (Corresponding author) Menzel, Stephan Hardtdegen, Alexander Hoffmann-Eifert, Susanne Jungemann, Christoph |
Microscopic simulation of RF noise in junctionless nanowire transistors Journal Article (2018) | Noei, Maziar (Corresponding author) Jungemann, Christoph |
Investigation of the Dyakonov-Shur instability for THz wave generation based on the Boltzmann transport equation Contribution to a book, Journal Article (2018) | Kargar, Zeinab (Corresponding author) Linn, Tobias Sebastian Jungemann, Christoph |
Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET Journal Article (2018) | Jabs, Dominic (Corresponding author) Bach, Karl Heinz Jungemann, Christoph |
Small-signal analysis of silicon nanowire transistors based on a Poisson/Schrödinger/Boltzmann solver Contribution to a book, Contribution to a conference proceedings (2017) | Noei, Maziar (Corresponding author) Ruic, Dino Jungemann, Christoph |
Simulation of THz emission by plasma waves in GaAs devices based on the Boltzmann transport equation Contribution to a book, Contribution to a conference proceedings (2017) | Kargar, Zeinab (Corresponding author) Ruic, Dino Linn, Tobias Sebastian Jungemann, Christoph |
Transport modeling for plasma waves in THz devices Contribution to a conference proceedings (2017) | Jungemann, Christoph Kargar, Zeinab Ruic, Dino |
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode Contribution to a book, Contribution to a conference proceedings (2017) | Stehling, Wilhelm Abbaspour, Elhameh Jungemann, Christoph Menzel, Stephan |
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations Contribution to a book, Contribution to a conference proceedings (2017) | Abbaspour, Elhameh (Corresponding author) Menzel, Stephan (Corresponding author) Jungemann, Christoph (Corresponding author) |
Simulation of exciton effects in OLEDs based on the master equation Contribution to a book, Contribution to a conference proceedings (2017) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation Journal Article (2017) | Kargar, Zeinab (Corresponding author) Ruic, Dino Linn, Tobias Sebastian Jungemann, Christoph |
Analysis of trap-induced noise in organic light-emitting diodes based on the master equation Contribution to a book, Contribution to a conference proceedings (2017) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
Simulation of THz emission based on plasma wave excitation Contribution to a book, Contribution to a conference proceedings (2017) | Kargar, Zeinab (Corresponding author) Ruic, Dino Linn, Tobias Sebastian Jungemann, Christoph |
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications Journal Article (2017) | Chevalier, Pascal (Corresponding author) Schroter, Michael Bolognesi, Colombo R. d'Alessandro, Vincenzo Alexandrova, Maria Bock, Josef Flickiger, Ralf Fregonese, Sebastien Heinemann, Bernd Jungemann, Christoph Lovblom, Rickard Maneux, Cristell Ostinelli, Olivier Pawlak, Andreas Rinaldi, Niccolo Rucker, Holger Wedel, Gerald Zimmer, Thomas |
Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit Journal Article (2017) | Kamrani, Mohammad Hamed Jabs, Dominic d'Alessandro, Vincenzo Rinaldi, Niccolo Jacquet, Thomas Maneux, Cristell Zimmer, Thomas Aufinger, Klaus Jungemann, Christoph (Corresponding author) |
A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs Journal Article (2017) | Kamrani, Mohammad Hamed Jabs, Dominic d'Alessandro, Vincenzo Rinaldi, Niccolo Aufinger, Klaus Jungemann, Christoph (Corresponding author) |
Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection Journal Article (2016) | Jungemann, Christoph (Corresponding author) Linn, Tobias Sebastian Bittner, K. Brachtendorf, H.-G. |
The EU DOTSEVEN Project: Overview and Results Contribution to a book, Contribution to a conference proceedings (2016) | Schroter, M. Boeck, J. d'Alessandro, V. Fregonese, S. Heinemann, B. Jungemann, Christoph (Corresponding author) Liang, W. Kamrani, Mohammad Hamed Mukherjee, A. Pawlak, A. Pfeiffer, U. Rinaldi, N. Sarmah, N. Zimmer, T. Wedel, G. |
Numerical Capacitance Analysis of Single-Layer OLEDs Based on the Master Equation Journal Article (2016) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
Physics-based hot-carrier degradation model for SiGe HBTs Contribution to a book, Contribution to a conference proceedings (2016) | Kamrani, Mohammad Hamed (Corresponding author) Jabs, Dominic d'Alessandro, Vincenzo Rinaldi, Niccolo Jungemann, Christoph |
Noise simulation of bipolar organic semiconductor devices based on the master equation Contribution to a book, Contribution to a conference proceedings (2016) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
A self-consistent solution of the poisson and Boltzmann equations for electrons in graphene with a deterministic approach Contribution to a book, Contribution to a conference proceedings (2016) | Dieball, Oliver (Corresponding author) Kargar, Zeinab (Corresponding author) Ruic, Dino Jungemann, Christoph |
KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices Contribution to a book, Contribution to a conference proceedings (2016) | Abbaspour, Elhameh (Corresponding author) Menzel, Stephan (Corresponding author) Jungemann, Christoph (Corresponding author) |
Numerical investigation of junctionless nanowire transistors using a Boltzmann/Schrödinger/Poisson full Newton-Raphson solver Contribution to a book, Contribution to a conference proceedings (2016) | Noei, Maziar (Corresponding author) Jungemann, Christoph |
Investigation of Transport Modeling for Plasma Waves in THz Devices Journal Article (2016) | Kargar, Zeinab (Corresponding author) Linn, Tobias Sebastian Ruic, Dino Jungemann, Christoph |
Simulation of Plasma Resonances in MOSFETs for THz-Signal Detection Contribution to a book, Contribution to a conference proceedings (2016) | Jungemann, Christoph (Corresponding author) Bittner, K. (Corresponding author) Brachtendorf, H. G. (Corresponding author) |
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach Journal Article (2016) | Ruic, Dino (Corresponding author) Jungemann, Christoph |
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation Journal Article (2016) | Rupp, K. (Corresponding author) Jungemann, Christoph (Corresponding author) Hong, S.-M. Bina, M. Grasser, T. Jüngel, A. |
Strain-modulated electronic and thermal transport properties of two-dimensional O-silica Journal Article (2016) | Han, Yang Qin, Guangzhao Jungemann, Christoph (Corresponding author) Hu, Ming (Corresponding author) |
Langevin-Boltzmann approach for fluctuations in a hot-electron-hot-phonon system Contribution to a book, Contribution to a conference proceedings (2015) | Ramonas, Mindaugas (Corresponding author) Jungemann, Christoph |
A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations for GaAs devices by a deterministic solver Contribution to a book, Contribution to a conference proceedings (2015) | Kargar, Zeinab (Corresponding author) Ruić, Dino Jungemann, Christoph |
Small signal and microscopic noise simulation of an nMOSFET by a self-consistent, semi-classical and deterministic approach Contribution to a book, Contribution to a conference proceedings (2015) | Ruic, Dino (Corresponding author) Jungemann, Christoph |
Electrothermal simulation of SiGe HBTs and investigation of experimental extraction methods for junction temperature Contribution to a book, Contribution to a conference proceedings (2015) | Kamrani, Mohammad Hamed (Corresponding author) Kochubey, Tatiana Jabs, Dominic Jungemann, Christoph |
Simulation of bipolar organic semiconductor devices based on the master equation including generation and recombination Contribution to a book, Contribution to a conference proceedings (2015) | Zhou, Weifeng (Corresponding author) Zimmermann, Christoph Jungemann, Christoph |
The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations Contribution to a book, Contribution to a conference proceedings (2015) | Abbaspour, Elhameh (Corresponding author) Menzel, Stephan Jungemann, Christoph |
Field-induced detrapping in doped organic semiconductors with Gaussian disorder and different carrier localizations on host and guest sites Journal Article (2015) | Scheb, M. Zimmermann, Christoph Jungemann, Christoph |
Entwicklung der Simulation in der Mikro-/Nanoelektronik Journal Article (2015) | Jungemann, Christoph (Corresponding author) |
A Robust Algorithm for Microscopic Simulation of Avalanche Breakdown in Semiconductor Devices Journal Article (2015) | Jabs, Dominic (Corresponding author) Jungemann, Christoph (Corresponding author) Bach, Karl Heinz (Corresponding author) |
Simulation of electronic noise in disordered organic semiconductor devices based on the master equation Journal Article (2015) | Jungemann, Christoph (Corresponding author) |
A Deterministic approach to noise in a non-equilibrium electron-phonon system based on the Boltzmann equation Journal Article (2015) | Ramonas, Mindaugas Jungemann, Christoph |
Numerical aspects of noise simulation in MOSFETs by a Langevin-Boltzmann solver Journal Article (2015) | Ruic, Dino Jungemann, Christoph |
A semi-distributed method for inductor de-embedding Contribution to a book, Contribution to a conference proceedings (2014) | Dang, J. (Corresponding author) Noculak, Achim Korndörfer, F. Jungemann, Christoph Meinerzhagen, B. |
A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25μm CMOS technology Contribution to a book, Contribution to a conference proceedings (2014) | Dang, J. (Corresponding author) Noculak, A. Haddadinejad, S. Jungemann, Christoph Meinerzhagen, B. |
Validity of Macroscopic Noise Models in the case of High-Frequency Bipolar Transistors Contribution to a conference proceedings (2014) | Jungemann, Christoph |
Avalanche Breakdown of pn-junctions - Simulation by Spherical Harmonics Expansion of the Boltzmann Transport Equation Contribution to a book, Contribution to a conference proceedings (2014) | Jabs, Dominic Jungemann, Christoph |
DC, AC and Noise Simulation of Organic Semiconductor Devices based on the Master Equation Contribution to a book, Contribution to a conference proceedings (2014) | Jungemann, Christoph Zimmermann, Christoph |
Interface states charges as a vital component for HC degradation modeling Contribution to a conference proceedings (2014) | Tyaginov, S. E. Starkov, I. A. Triebl, O. Cervenka, J. Jungemann, Christoph Carniello, S. Park, J. M. Enichlmair, H. Karner, M. Kernstock, C. Seebacher, E. Minixhofer, R. Ceric, H. Grasser, T. |
Technology Computer Aided Design Contribution to a book (2013) | Esseni, David Jungemann, Christoph Lorenz, Jürgen Palestri, Pierpaolo Sangiorgi, Enrico Selmi, Luca |
Spherical Harmonics Solver for Coupled Hot-Electron : Hot-Phonon System Contribution to a book, Contribution to a conference proceedings (2013) | Ramonas, Mindaugas (Corresponding author) Jungemann, Christoph |
A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices Contribution to a book, Contribution to a conference proceedings (2013) | Ruic, Dino (Corresponding author) Jungemann, Christoph |
Investigation of Electronic Noise in THz SiGe HBTs by Microscopic Simulation Contribution to a book, Contribution to a conference proceedings (2013) | Jungemann, Christoph (Corresponding author) Hong, Sung-Min |
Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices Contribution to a conference proceedings, Journal Article (2013) | Jungemann, Christoph (Corresponding author) Pham, A.-T. Hong, S.-M. Smith, L. Meinerzhagen, B. |
Comparison of noise predictions by commercial TCAD device simulator to results from a spherical harmonics expansion solver Contribution to a book, Contribution to a conference proceedings (2012) | Dinh, T. V. Klaassen, D. B. M. Vanhoucke, T. Gridelet, E. Mertens, H. van Dalen, R. Magnee, P. H. C. Ramonas, Mindaugas Jungemann, Christoph |
Systematic Compact Modeling of Correlated Noise in Bipolar Transistors Journal Article (2012) | Herricht, Jörg Sakalas, Paulius Ramonas, Mindaugas Schroter, Michael Jungemann, Christoph Mukherjee, Anindya Moebus, Kai Erik |
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation Contribution to a conference proceedings (2012) | Rupp, K. Jungemann, Christoph Bina, M. Jüngel, A. Grasser, T. |
A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs Journal Article (2012) | Kai, Zhao Jungemann, Christoph Xiao-Yan, Liu |
Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation Contribution to a book, Contribution to a conference proceedings (2012) | Tyaginov, Stanislav Starkov, Ivan Triebl, Oliver Karner, M. Kernstock, Ch. Jungemann, Christoph Enichlmair, Hubert Park, J. M. Grasser, Tibor |
Analytical solutions of a spatially homogeneous Boltzmann equation for cyclostationary noise including generation/recombination Contribution to a book, Contribution to a conference proceedings (2012) | Jungemann, Christoph |
Deterministic Simulation of 3D and Quasi-2D Electron and Hole Systems in SiGe Devices Contribution to a book, Contribution to a conference proceedings (2012) | Jungemann, Christoph Pham, Anh-Tuan Hong, Sung-Min Meinerzhagen, Bernd |
Quantum simulations of electrostatics in si cylindrical junctionless nanowire nfets and pfets with a homogeneous channel including strain and arbitrary crystallographic orientations Contribution to a conference proceedings, Journal Article (2012) | Anh-Tuan Pham Soree, Bart Magnus, Wim Jungemann, Christoph Meinerzhagen, Bernd Pourtois, Geoffrey |
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations Contribution to a book, Contribution to a conference proceedings (2011) | Pham, Anh-Tuan Soree, B. Magnus, W. Jungemann, Christoph Meinerzhagen, B. Pourtois, G. |
Numerical Modeling of Noise and Transport in SOI Devices Contribution to a book, Contribution to a conference proceedings (2011) | Meinerzhagen, Bernd Pham, Anh-Tuan Hong, Sung-Min Jungemann, Christoph |
Hot-carrier degradation caused interface state profile; Simulation versus experiment Journal Article (2011) | Starkov, I. A. Tyaginov, S. E. Enichlmair, H. Cervenka, J. Jungemann, Christoph Carniello, S. Park, J. M. Ceric, H. Grasser, T. |
An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion Journal Article (2011) | Jin, Seong Hoon Hong, Sung-Min Jungemann, Christoph |
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress Journal Article (2011) | Dinh, Thanh Viet Hong, Sung-Min Jungemann, Christoph |
Deterministic Solvers for the Boltzmann Transport Equation Book (2011) | Hong, Sung-Min Pham, Anh-Tuan Jungemann, Christoph |
Impact of the carrier distribution function on hot-carrier degradation modeling Contribution to a book, Contribution to a conference proceedings (2011) | Tyaginov, Stanislav Starkov, Ivan Jungemann, Christoph Enichlmair, Hubert Park, Jong-Mun Grasser, Tibor |
Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs Contribution to a book, Contribution to a conference proceedings (2011) | Starkov, Ivan Ceric, Hajdin Enichlmair, Hubert Jong-Mun Park Tyaginov, Stanislav Grasser, Tibor Jungemann, Christoph |
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET Contribution to a book, Contribution to a conference proceedings (2011) | Tyaginov, Stanislav Starkov, Ivan Triebl, Oliver Ceric, Hajdin Grasser, Tibor Enichlmair, Hubert Park, Jong-Mun Jungemann, Christoph |
Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET Contribution to a book, Contribution to a conference proceedings (2011) | Kai Zhao Jungemann, Christoph Xiaoyan Liu |
An analytical approach for physical modeling of hot-carrier induced degradation Contribution to a conference proceedings, Journal Article (2011) | Tyaginov, S. Starkov, I. Enichlmair, H. Jungemann, Christoph Park, J. M. Seebacher, E. Orio, R. Ceric, H. Grasser, T. |
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C-V characteristics, mobility, and ON current Contribution to a conference proceedings, Journal Article (2011) | Pham, Anh-Tuan Zhao, Qing-Tai Jungemann, Christoph Meinerzhagen, Bernd Manti, Siegfried Soree, Bart Pourtois, Geoffrey |
Physical and Electrical Performance Limits of High-Speed SiGeC HBTs-Part I: Vertical Scaling Journal Article (2011) | Schröter, Michael Wedel, Gerald Heinemann, Bernd Jungemann, Christoph Krause, Julia Chevalier, Pascal Chantre, Alain |
High-order spherical harmonics solution of the Boltzmann equation and noise modeling Contribution to a book, Contribution to a conference proceedings (2010) | Jungemann, Christoph Hong, Sung-Min Matz, G. |
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current Contribution to a book, Contribution to a conference proceedings (2010) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers Contribution to a book, Contribution to a conference proceedings (2010) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBTs Contribution to a book, Contribution to a conference proceedings (2010) | Al-Sadi, M. d'Alessandro, V. Fregonese, S. Hong, Sung-Min Jungemann, Christoph Maneux, C. Marano, I. Pakfar, A. Rinaldi, N. Sasso, G. Schröter, M. Sibaja-Hernandez, A. Tavernier, C. Wedel, G. |
Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs Contribution to a book, Contribution to a conference proceedings (2010) | Zhao, Kai Hong, Sung-Min Jungemann, Christoph Han, Ru-Qi |
A deterministic Boltzmann solver for GaAs devices based on the spherical harmonics expansion Contribution to a book, Contribution to a conference proceedings (2010) | Bieder, J. Hong, Sung-Min Jungemann, Christoph |
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices Contribution to a book, Contribution to a conference proceedings (2010) | Hong, Sung-Min Jungemann, Christoph |
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode Contribution to a book, Contribution to a conference proceedings (2010) | Riedlberger, E. Keller, R. Reisinger, H. Gustin, W. Spitzer, A. Stecher, M. Jungemann, Christoph |
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations Contribution to a book, Contribution to a conference proceedings (2010) | Starkov, I. A. Tyaginov, S. E. Triebl, O. Cervenka, J. Jungemann, Christoph Carniello, S. Park, J. M. Enichlmair, H. Karner, M. Kernstock, C. Seebacher, E. Minixhofer, R. Ceric, H. Grasser, T. |
Hot-carrier degradation modeling using full-band Monte-Carlo simulations Contribution to a book, Contribution to a conference proceedings (2010) | Tyaginov, S. E. Starkov, I. A. Triebl, O. Cervenka, J. Jungemann, Christoph Carniello, S. Park, J. M. Enichlmair, H. Karner, M. Kernstock, C. Seebacher, E. Minixhofer, R. Ceric, H. Grasser, T. |
Solving Boltzmann Transport Equation Without Monte-Carlo Algorithms : New Methods for Industrial TCAD Applications Contribution to a book, Contribution to a conference proceedings (2010) | Meinerzhagen, Bernd Pham, Anh-Tuan Hong, Sung-Min Jungemann, Christoph |
Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects Contribution to a book, Contribution to a conference proceedings (2010) | Matz, Gregor Hong, Sung-Min Jungemann, Christoph |
Analysis of the IMOS Transistor with a Floating Body Report (2010) | Kraus, R. Jungemann, Christoph |
A Deterministic Boltzmann Equation Solver Based on a Higher-Order Spherical Harmonics Expansion with Full-Band Effects Journal Article (2010) | Hong, Sun-Ming Matz, Gregor Jungemann, Christoph |
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors Contribution to a conference proceedings, Journal Article (2010) | Dinh, Thanh Viet Kraus, Rainer Jungemann, Christoph |
Interface traps density-of-states as a vital component for hot-carrier degradation modeling Contribution to a conference proceedings, Journal Article (2010) | Tyaginov, S. E. Starkov, I. A. Triebl, O. Cervenka, J. Jungemann, Christoph Carniello, S. Park, J. M. Enichlmair, H. Karner, M. Kernstock, C. Seebacher, E. Minixhofer, R. Ceric, H. Grasser, T. |
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion Journal Article (2010) | Hong, Sung-Min Jungemann, Christoph |
HC degradation model: interface state profile - simulations vs. experiment Contribution to a conference proceedings (2010) | Starkov, I. A. Tyaginov, S. E. Enichlmair, H. Triebl, O. Cervenka, J. Jungemann, Christoph Carniello, S. Park, J. M. Ceric, H. Grasser, T. |
Investigation of transport and noise in terahertz SiGe HBTs based on deterministic spherical harmonics expansion of the Boltzmann transport equation Contribution to a conference proceedings (2010) | Jungemann, Christoph Hong, Sung-Min |
Electron transport in extremely scaled SiGe HBTs Contribution to a book, Contribution to a conference proceedings (2009) | Hong, Sung-Min Jungemann, Christoph |
Investigation of the Vertical IMOS-Transistor by Device Simulation Contribution to a book, Contribution to a conference proceedings (2009) | Kraus, Rainer Jungemann, Christoph |
A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFETs Contribution to a book, Contribution to a conference proceedings (2009) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Impact ionization rates for strained SiGe Contribution to a book, Contribution to a conference proceedings (2009) | Dinh, Thanh Viet Jungemann, Christoph |
Investigation of noise performance of double-gate MOSFETs by deterministic simulation of Boltzmann equation Contribution to a book, Contribution to a conference proceedings (2009) | Hong, Sung-Min Jungemann, Christoph |
Investigation of Noise Performance of SiGe HBTs by Deterministic Simulation of Boltzmann Equation in Two-Dimensional Real Space Contribution to a book, Contribution to a conference proceedings (2009) | Hong, Sung-Min Jungemann, Christoph |
Noise in Green Transistors (Small Slope Switches) Contribution to a book, Contribution to a conference proceedings (2009) | Jungemann, Christoph |
Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range Contribution to a book, Contribution to a conference proceedings (2009) | Shimukovitch, A. Sakalas, P. Ramonas, M. Schröter, M. Jungemann, Christoph Kraus, W. |
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors Contribution to a book, Contribution to a conference proceedings (2009) | Dinh, Thanh Viet Kraus, Rainer Jungemann, Christoph |
Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress Contribution to a book, Contribution to a conference proceedings (2009) | Riedlberger, E. Jungemann, Christoph Spitzer, A. Stecher, M. Gustin, W. |
Oscillator Noise Analysis: Full Spectrum Evaluation Including Orbital Deviations Contribution to a book, Contribution to a conference proceedings (2009) | Hong, Sung-Min Jungemann, Christoph |
Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS Contribution to a book, Contribution to a conference proceedings (2009) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Modeling of piezoresistive coefficients in Si hole inversion layers Contribution to a book, Contribution to a conference proceedings (2009) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
The Impact of Collisional Broadening on Noise in Silicon at Equilibrium Contribution to a book, Contribution to a conference proceedings (2009) | Jungemann, Christoph Nedjalkov, Mihail |
On the feasibility of 500 GHz Silicon-Germanium HBTs Contribution to a book, Contribution to a conference proceedings (2009) | Pawlak, A. Schröter, M. Krause, J. Wedel, G. Jungemann, Christoph |
Accurate mobility and energy relaxation time models for SiGe HBTs numerical simulation Contribution to a book, Contribution to a conference proceedings (2009) | Sasso, G. Matz, G. Jungemann, Christoph Rinaldi, N. |
Predictive TCAD support for NanoMOS compact model development Conference Presentation (2009) | Meinerzhagen, Bernd Pham, Anh-Tuan Jungemann, Christoph |
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs Journal Article (2009) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Modeling and validation of piezoresistive coefficients in Si hole inversion layers Contribution to a conference proceedings, Journal Article (2009) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results Journal Article (2009) | Sakalas, Paulius Ramonas, Mindaugas Schröter, Michael Jungemann, Christoph Shimukovitch, Artur Kraus, Wolfgang |
Impact ionization rates for strained Si and SiGe Contribution to a conference proceedings, Journal Article (2009) | Dinh, Than Viet Jungemann, Christoph |
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion Journal Article (2009) | Hong, S.-M. Jungemann, Christoph |
Modeling of SiGe HBT Operation in Extreme Temperature Environment Abstract, Contribution to a book, Contribution to a conference proceedings (2008) | Sakalas, P. Ramonas, M. Schröter, M. Kittlaus, A. Geissler, H. Jungemann, Christoph Shimukovitch, A. |
High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage Contribution to a book, Contribution to a conference proceedings (2008) | Krishnamohan, Tejas Kim, Donghyun Nishi, Yoshio Saraswat, Krishna C. Jungemann, Christoph |
Deterministic simulation of SiGe HBTs based on the Boltzmann equation Contribution to a book, Contribution to a conference proceedings (2008) | Hong, Sung-Min Jungemann, Christoph |
Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs Contribution to a book, Contribution to a conference proceedings (2008) | Krishnamohan, Tejas Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd Saraswat, Krishna C. |
Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport Contribution to a book, Contribution to a conference proceedings (2008) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage Contribution to a book, Contribution to a conference proceedings (2008) | Krishnamohan, Tejas Kim, Donghyun Dinh, Thanh Viet Pham, Anh-Tuan Meinerzhagen, Bernd Jungemann, Christoph Saraswat, Krishna C. |
Advances in spherical harmonics solvers for the Boltzmann equation Contribution to a book, Contribution to a conference proceedings (2008) | Jungemann, Christoph |
Mobilty Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs Contribution to a book, Contribution to a conference proceedings (2008) | Krishnamohan, Tejas Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd Saraswat, Krishna C. |
A deterministic Boltzmann equation solver for two-dimensional semiconductor devices Contribution to a book, Contribution to a conference proceedings (2008) | Hong, Sung-Min Jungemann, Christoph Bollhöfer, Matthias |
Simulation of magnetotransport in nanoscale devices Contribution to a book, Contribution to a conference proceedings (2008) | Hong, Sung-Min Jungemann, Christoph |
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates Contribution to a conference proceedings, Journal Article (2008) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers Contribution to a conference proceedings, Journal Article (2008) | Pham, A.-T. Jungemann, J. Klawitter, M. Meinerzhagen, B. |
Transport and Noise Calculations for Nanoscale Si Devices Based on the Langevin Boltzmann Equation Expanded with Spherical Harmonics Journal Article (2008) | Jungemann, Christoph |
A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization Journal Article (2008) | Pham, Anh-Tuan Meinerzhagen, Bernd Jungemann, Christoph |
Numerical Simulation of Electronic Noise in Silicon MOSFETs Conference Presentation, Contribution to a conference proceedings (2007) | Jungemann, Christoph |
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs Contribution to a book, Contribution to a conference proceedings (2007) | Fiegna, C. Braccioli, M. Brugger, S. C. Bufler, F. M. Dollfus, P. Aubry-Fortuna, V. Jungemann, Christoph Meinerzhagen, Bernd Palestri, P. Galdin-Retailleau, S. Sangiorgi, E. Schenk, A. Selmi, L. |
A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization Contribution to a conference proceedings (2007) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
A Deterministic Solver for the Langevin Boltzmann Equation Including the Pauli Principle Contribution to a book, Contribution to a conference proceedings (2007) | Jungemann, Christoph |
Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates Contribution to a book, Contribution to a conference proceedings (2007) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Microscopic modeling of high frequency noise in SiGe HBTs Contribution to a book, Contribution to a conference proceedings (2007) | Ramonas, Mindaugas Sakalas, Paulius Jungemann, Christoph Schröter, Michael Kraus, Wolfgang Shimukovitch, Artur |
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers Contribution to a book, Contribution to a conference proceedings (2007) | Pham, Anh-Tuan Jungemann, Christoph Klawitter, M. Meinerzhagen, Bernd |
Ballisticity of the linear response transport in nanometric silicon devices Contribution to a book, Contribution to a conference proceedings (2007) | Jungemann, Christoph |
Numerical modeling of electron noise in nanoscale Si devices Contribution to a book, Contribution to a conference proceedings (2007) | Jungemann, Christoph |
Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors Contribution to a book, Contribution to a conference proceedings (2007) | Ramonas, Mindaugas Jungemann, Christoph Sakalas, Paulius Schröter, Michael Kraus, Wolfgang |
Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems Contribution to a book, Contribution to a conference proceedings (2007) | Jungemann, Christoph |
Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands Contribution to a book, Contribution to a conference proceedings (2007) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
High Performance, Strained-Ge, Heterostructure p-MOSFETs Contribution to a book, Contribution to a conference proceedings (2007) | Krishnamohan, Tejas Kim, Donghyun Jungemann, Christoph Pham, Anh-Tuan Meinerzhagen, Bernd Nishi, Yoshio Saraswat, Krishna C. |
Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner Contribution to a book, Contribution to a conference proceedings (2007) | Bach, K. H. Liebmann, R. Nawaz, M. Jungemann, Christoph Ungersboeck, Enzo |
High Performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs Contribution to a conference proceedings, Journal Article (2007) | Krishnamohan, T. Jungemann, Christoph Kim, Donghyun Ungersboeck, E. Selberherr, S. Pham, Anh-Tuan. Meinerzhagen, Bernd Wong, P. Nishi, Y. Saraswat, K. C. |
High-frequency noise in nanoscale metal oxide semiconductor field effect transistors Journal Article (2007) | Navid, Reza Jungemann, Christoph Lee, Thomas H. Dutton, Robert W. |
Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator Journal Article (2007) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
A Deterministic Approach to RF Noise in Silicon Devices based on the Langevin Boltzmann equation Journal Article (2007) | Jungemann, Christoph |
Modeling of High Frequency Noise in SiGe HBTs Contribution to a book, Contribution to a conference proceedings (2006) | Sakalas, P. Chakravorty, A. Schröter, M. Ramonas, M. Herricht, J. Shimukovitch, A. Jungemann, Christoph |
A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport Abstract, Contribution to a book, Contribution to a conference proceedings (2006) | Jungemann, Christoph Pham, Anh-Tuan Meinerzhagen, Bernd |
Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative Contribution to a book, Contribution to a conference proceedings (2006) | Jungemann, Christoph Meinerzhagen, Bernd |
Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase Contribution to a book, Contribution to a conference proceedings (2006) | Hagenbeck, R. Decker, S. Haibach, P. Mikolajick, T. Tempel, G. Isler, M. Jungemann, Christoph Meinerzhagen, Bernd |
A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies Contribution to a book, Contribution to a conference proceedings (2006) | Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs Contribution to a book, Contribution to a conference proceedings (2006) | Krishnamohan, Tejas Jungemann, Christoph Kim, Donghyun Ungersboeck, Enzo Selberherr, Siegfried Wong, Philip Nishi, Yoshio Saraswat, Krishna C. |
Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs? Contribution to a book, Contribution to a conference proceedings (2006) | Krishnamohan, Tejas Kim, Donghyun Jungemann, Christoph Nishi, Yoshio Saraswat, Krishna C. |
Numerical simulation of RF noise in Si devices Contribution to a book, Contribution to a conference proceedings (2006) | Jungemann, Christoph Meinerzhagen, Bernd |
Stable Discretization of the Langevin-Boltzmann Equation based on Spherical Harmonics, Box Integration and Maximum Entropy Dissipation Principle Conference Presentation (2006) | Jungemann, Christoph |
A linear response Monte Carlo algorithm for inversion layers and magnetotransport Journal Article (2006) | Jungemann, Christoph Pham, Anh-Tuan Meinerzhagen, Bernd |
Numerical modeling of RF noise in scaled MOS devices Contribution to a conference proceedings, Journal Article (2006) | Jungemann, Christoph Neinhüs, B. Nguyen, C. D. Scholten, A. J. Tiemeijer, L. F. Meinerzhagen, Bernd |
A full band deterministic model for semiclassical carrier transport in semiconductors Journal Article (2006) | Smirnov, S. Jungemann, Christoph |
High-Mobility Low Band-To-Band-Tunneling Strained-Germanium Double-Gate Heterostructure FETs: Simulations Contribution to a book, Journal Article (2006) | Krishnamohan, Tejas Kim, Donghyun Nguyen, Chi Dong Jungemann, Christoph Nishi, Yoshio Saraswat, Krishna C. |
A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs Contribution to a conference proceedings, Journal Article (2006) | Pham, Anh-Tuan Nguyen, C. D. Jungemann, Christoph Meinerzhagen, Bernd |
Noise modeling in scaled MOSFET devices Contribution to a conference proceedings, Journal Article (2006) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, B. |
Do hot electrons cause excess noise? Contribution to a conference proceedings, Journal Article (2006) | Jungemann, Christoph Meinerzhagen, B. |
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs Contribution to a conference proceedings, Journal Article (2006) | Pham, A. T. Jungemann, Christoph Nguyen, C. D. Meinerzhagen, Bernd |
Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle Journal Article (2006) | Jungemann, Christoph Pham, A. T. Meinerzhagen, B. Ringhofer, C. Bollhöfer, M. |
Über die Vernachlässigung von Beschleunigungseffekten in der Simulation von Siliziumbauelementen Contribution to a book, Contribution to a conference proceedings (2005) | Jungemann, Christoph Meinerzhagen, Bernd |
Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study Contribution to a book, Contribution to a conference proceedings (2005) | Neinhüs, B. Jungemann, Christoph Meinerzhagen, Bernd |
Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs Abstract, Contribution to a conference proceedings (2005) | Nguyen, Chi Dong Pham, Anh-Tuan Jungemann, Christoph Meinerzhagen, Bernd |
Do hot electrons produce excess noise? Contribution to a book, Contribution to a conference proceedings (2005) | Jungemann, Christoph Meinerzhagen, Bernd |
Nonparabolic macroscopic transport models for device simualtion based on bulk Monte Carlo data Journal Article (2005) | Grasser, T. Kosik, R. Jungemann, Christoph Kosina, H. Selberherr, S. |
On the High Frequency Limit of the Impedance Field Method for Si Contribution to a book, Contribution to a conference proceedings (2005) | Jungemann, Christoph Meinerzhagen, Bernd |
A Frequency Domain Spherical Harmonics Solver for the Langevin Boltzmann Equation Contribution to a book, Contribution to a conference proceedings (2005) | Jungemann, Christoph Meinerzhagen, Bernd |
Convergence of the Legendre Polynomial Expansion of the Boltzmann Equation for Nanoscale Devices Contribution to a book, Contribution to a conference proceedings (2005) | Jungemann, Christoph Bollhöfer, Matthias Meinerzhagen, Bernd |
Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium Contribution to a book, Contribution to a conference proceedings (2005) | Jungemann, Christoph Grasser, T. Meinerzhagen, B. |
Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation Contribution to a book, Contribution to a conference proceedings (2005) | Nguyen, C. D. Jungemann, Christoph Meinerzhagen, B. |
Full-Band Monte-Carlo Simulation of sub-100 nm strained Si CMOS Journal Article (2005) | Pham, A. T. Nguyen, C. D. Jungemann, Christoph Meinerzhagen, Bernd |
Study of Charge Carrier Quantization in Strained Si-nMOSFETs Contribution to a conference proceedings, Journal Article (2005) | Nguyen, C. D. Pham, A. T. Jungemann, Christoph Meinerzhagen, B. |
Impact ionization MOS (I-MOS)-Part II: experimental results Journal Article (2005) | Gopalakrishnan, Kailash Woo, Raymond Jungemann, Christoph Griffin, Peter B. Plummer, James D. |
Failure of Moments-Based Transport Models in Nanoscale Devices near Equilibrium Journal Article (2005) | Jungemann, Christoph Grasser, Tibor Neinhüus, Burkhard Meinerzhagen, Bernd |
Close-in phase noise in integrated oscillators Contribution to a book, Contribution to a conference proceedings (2004) | Navid, Reza Jungemann, Christoph Lee, Thomas H. Dutton, Robert W. |
Noise modeling of Si and SiGe devices Contribution to a book, Contribution to a conference proceedings (2004) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, Bernd |
An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation Contribution to a book, Contribution to a conference proceedings (2004) | Grgec, Dalibor Jungemann, Christoph Nguyen, Chi Dong Neinhüs, Burkhard Meinerzhagen, Bernd |
Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs Contribution to a book, Contribution to a conference proceedings (2004) | Krishnamohan, Tejas Jungemann, Christoph Saraswat, Krishna C. |
Advanced Transport Models for Sub-Micrometer Devices Contribution to a book, Contribution to a conference proceedings (2004) | Grasser, T. Jungemann, Christoph Kosina, H. Meinerzhagen, B. Selberherr, S. |
Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation Contribution to a book, Contribution to a conference proceedings (2004) | Jungemann, Christoph Neinhüs, B. Nguyen, C. D. Meinerzhagen, B. |
Extraction of band offsets in Strained Si/Strained SiGe on relaxed SiGe dual-channel enhanced mobility structures Contribution to a book, Contribution to a conference proceedings (2004) | Chleirigh, C. Ni Jungemann, Christoph Jung, J. Olubuyide, O. O. Hoyt, J. L. |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey Abstract, Contribution to a book, Contribution to a conference proceedings (2004) | Nguyen, C. D. Pham, A. T. Jungemann, Christoph Meinerzhagen, B. |
Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation Contribution to a book, Contribution to a conference proceedings (2004) | Jungemann, Christoph Neinhüs, Burkhard Meinerzhagen, Bernd Dutton, Robert W. |
A Legendre Polynomial Solver for the Langevin Boltzmann Equation Abstract, Contribution to a book, Contribution to a conference proceedings (2004) | Jungemann, Christoph Meinerzhagen, Bernd |
Full-Band Monte-Carlo Simulation of sub-100 nm strained Si CMOS Report (2004) | Pham, Anh-Tuan Nguyen, Chi Dong Jungemann, Christoph Meinerzhagen, Bernd |
Investigation of strained Si/SiGe devices by MC simulation Contribution to a book, Journal Article (2004) | Jungemann, Christoph Subba, N. Goo, J. S. Riccobene, C. Xiang, Q. Meinerzhagen, B. |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey Journal Article (2004) | Nguyen, C. D. Pham, A. T. Jungemann, Christoph Meinerzhagen, B. |
Investigation of Compact Models for RF Noise in SiGe HBTs by Hydrodynamic Device Simulation Journal Article (2004) | Jungemann, Christoph Neinhüs, Burkhard Meinerzhagen, Bernd Dutton, Robert W. |
A Legendre Polynomial Solver for the Langevin Boltzmann Equation Journal Article (2004) | Jungemann, Christoph Meinerzhagen, Bernd |
A Non-Parabolic Six Moments Model for the Simulation of sub-100nm Semiconductor Devices Journal Article (2004) | Grasser, Tibor Korsik, Robert Jungemann, Christoph Meinerzhagen, Bernd Kosina, Hans Selberherr, Siegfried |
Numerical Simulation of Strained Si/SiGe Devices : The Hierarchical Approach Contribution to a conference proceedings, Journal Article (2004) | Meinerzhagen, B. Jungemann, Christoph Neinhüs, B. Bartels, M. |
Maximum drive current scaling properties of strained Si NMOS in the deca-nanometer regime Contribution to a book, Contribution to a conference proceedings (2003) | Jungemann, Christoph Meinerzhagen, B. |
A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si xGe (1-x)/Si channel PMOSFET Contribution to a book, Contribution to a conference proceedings (2003) | Krishnamohan, T. Jungemann, Christoph Saraswat, K. C. |
Hydrodynamic Modeling of RF Noise for Silicon-Based Devices Contribution to a book, Journal Article (2003) | Jungemann, Christoph Neinhüs, Burkhard Meinerzhagen, Bernd |
A Simple Compact Model for Terminal Current Noise of SiGe HBTs Contribution to a book, Contribution to a conference proceedings (2003) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, B. |
Hydrodynamic Modeling of RF Noise in CMOS Devices Contribution to a book, Contribution to a conference proceedings (2003) | Jungemann, Christoph Neinhüs, B. Nguyen, C. D. Meinerzhagen, B. Dutton, R. W. Scholten, A. J. Tiemeijer, L. F. |
On the Diffusion Noise Sources of the Impedance Field Method Contribution to a book, Contribution to a conference proceedings (2003) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, B. |
MC Simulation of Strained Si/SiGe Devices Contribution to a book, Contribution to a conference proceedings (2003) | Jungemann, Christoph Meinerzhagen, B. |
Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs Contribution to a book, Contribution to a conference proceedings (2003) | Oh, Tae-Young Jungemann, Christoph Dutton, R. W. |
Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale pMOSFETs Contribution to a book, Contribution to a conference proceedings (2003) | Nguyen, C. D. Jungemann, Christoph Neinhüs, B. Meinerzhagen, B. Sedlmeier, J. Molzer, W. |
Hierarchical device simulation : the Monte-Carlo perspective Book (2003) | Jungemann, Christoph Meinerzhagen, Bernd |
Efficient full-band Monte Carlo simulation for device engineering Book (2003) | Jungemann, Christoph |
Evaluation of Compact Noise Modeling for Si/SiGe HBTs Based on Hierarchical Hydrodynamic Noise Simulation Contribution to a conference proceedings, Journal Article (2003) | Bartels, M. Neinhüs, B. Jungemann, Christoph Meinerzhagen, B. |
In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations Contribution to a conference proceedings, Journal Article (2003) | Jungemann, Christoph Meinerzhagen, Bernd |
Noise analysis for a SiGe HBT by hydrodynamic device simulation Contribution to a book, Contribution to a conference proceedings (2002) | Jungemann, Christoph Neinhüs, Burkard Meinerzhagen, Bernd |
Efficient Monte Carlo simulation of tunnel currents in MOS structures Contribution to a book, Contribution to a conference proceedings (2002) | Grgec, D. Vexler, M. I. Jungemann, Christoph Meinerzhagen, Bernd |
Quantum Correction of Electron Density for Monte Carlo Device Simulation Contribution to a book, Contribution to a conference proceedings (2002) | Grgec, D. Nguyen, C. D. Jungemann, Christoph Meinerzhagen, Bernd |
Numerische Simulation des Rauschverhaltens eines Si/SiGe-Heterobipolartransistors basierend auf der Hierarchischen Numerischen Bauelementsimulation Contribution to a book, Contribution to a conference proceedings (2002) | Bartels, M. Neinhüs, Burkhard Jungemann, Christoph Decker, S. Meinerzhagen, Bernd |
In-advance CPU time analysis for Monte Carlo device simulations Contribution to a book, Contribution to a conference proceedings (2002) | Jungemann, Christoph Meinerzhagen, Bernd |
Hierarchical Numerical Simulation exemplified for SiGe Heterojunction Bipolar Transistors Contribution to a book, Contribution to a conference proceedings (2002) | Meinerzhagen, Bernd Jungemann, Christoph Neinhüs, Burkhard Bartels, M. |
DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations Contribution to a book, Contribution to a conference proceedings (2002) | Neinhüs, Burkhard Jungemann, Christoph Meinerzhagen, Bernd |
Compact modeling of drain and gate current noise for RF CMOS Contribution to a book, Contribution to a conference proceedings (2002) | Scholten, A. J. Tiemeijer, L. F. van Langevelde, R. Havens, R. J. Venezia, V. C. Zegers-van Duijnhoven, A. T. A. Neinhüs, Burkhard Jungemann, Christoph Klaassen, D. B. M. |
On the Applicability of Nonself-Consistent Monte Carlo Device Simulations Journal Article (2002) | Jungemann, Christoph Meinerzhagen, Bernd |
Hierarchical 2-D DD and HD Noise Simulations of Si and SiGe Devices : Part I: Theory Journal Article (2002) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, Bernd |
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices : Part II: Results Journal Article (2002) | Jungemann, Christoph Neinhüs, B. Decker, S. Meinerzhagen, Bernd |
Modeling of the Stochastic Noise of Monte Carlo Device Simulations Abstract, Contribution to a conference proceedings (2001) | Jungemann, Christoph Meinerzhagen, Bernd |
Hierarchical 2D RF Noise Simulation of Si and SiGe Devices by Langevin-type DD and HD Models based on MC Generated Noise Parameters Contribution to a book, Contribution to a conference proceedings (2001) | Jungemann, Christoph Neinhüs, Burkhard Decker, S. Meinerzhagen, Bernd |
Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs Contribution to a book, Contribution to a conference proceedings (2001) | Jungemann, Christoph Nguyen, C. D. Neinhüs, Burkhard Decker, S. Meinerzhagen, Bernd |
A Methodology for Consistent MC HD and DD Simulations of Submicrometer NMOSFETs Contribution to a conference proceedings (2001) | Jungemann, Christoph Grgec, D. Meinerzhagen, B. |
2D Hierarchical Radio-Frequency Noise Modelling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources Contribution to a book, Contribution to a conference proceedings (2001) | Decker, S. Jungemann, Christoph Neinhüs, Burkhard Meinerzhagen, Bernd |
An Accurate and Efficient Methodology for RF Noise Simulations of nm-scale MOSFETs Based on Langevin-type Drift-diffusion Model Contribution to a book, Contribution to a conference proceedings (2001) | Decker, S. Jungemann, Christoph Neinhüs, Burkhard Meinerzhagen, Bernd |
Comparative Study of Electron Transit Times Evaluated by DD HD and MC Device Simulation for a SiGe HBT Journal Article (2001) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, Bernd |
Analysis of the Stochastic Error of Stationary Monte Carlo Device Simulations Journal Article (2001) | Jungemann, Christoph Meinerzhagen, Bernd |
Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation Abstract, Contribution to a book, Contribution to a conference proceedings (2000) | Jungemann, Christoph Neinhüs, B. Meinerzhagen, Bernd |
Investigation of High Frequency Noise in a SiGe Heterobipolar Transistor Based on Shockleys Impedance Field Method and the Hydrodynamic Model Contribution to a book, Contribution to a conference proceedings (2000) | Decker, S. Neinhüs, Burkhard Heinemann, B. Jungemann, Christoph Meinerzhagen, Bernd |
Efficiency and Stochastic Error of Monte Carlo Device Simulations Contribution to a book, Contribution to a conference proceedings (2000) | Jungemann, Christoph Meinerzhagen, Bernd |
Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation Contribution to a book, Contribution to a conference proceedings (2000) | Jungemann, Christoph Neinhüs, Burkhard Meinerzhagen, Bernd |
An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe Contribution to a book, Contribution to a conference proceedings (2000) | Jungemann, Christoph Heinemann, B. Tittelbach-Helmrich, K. Meinerzhagen, Bernd |
A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities Contribution to a book, Contribution to a conference proceedings (2000) | Neinhüs, Burkhard Nguyen, C. D. Jungemann, Christoph Meinerzhagen, Bernd |
Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile Contribution to a conference proceedings, Journal Article (2000) | Jungemann, Christoph Keith, Stefan Meinerzhagen, Bernd |
Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm Contribution to a book, Contribution to a conference proceedings (1999) | Jungemann, Christoph Meinerzhagen, Bernd |
Full-Band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile Contribution to a book, Contribution to a conference proceedings (1999) | Keith, S. Jungemann, Christoph Decker, S. Neinhüs, Burkhard Bartels, M. Meinerzhagen, Bernd |
Efficient Full-Band Monte Carlo Simulation of Silicon Devices Journal Article (1999) | Jungemann, Christoph Keith, Stefan Bartels, Martin Meinerzhagen, Bernd |
On the Number of Fast Interface States of Standard CMOS Technologies Journal Article (1999) | Jungemann, Christoph Meinerzhagen, Bernd Eller, M. |
Hall Factors of Si NMOS Inversion Layers for MAGFET Modeling Journal Article (1999) | Jungemann, Christoph Dudenbostel, D. Meinerzhagen, Bernd |
Full Band Monte-Carlo Device Simulation of 0.1-0.5 mum Strained-Si P MOSFETs Contribution to a book, Contribution to a conference proceedings (1998) | Keith, S. Jungemann, Christoph Meinerzhagen, Bernd |
Full-band Monte Carlo simulation of a 0.12c mu m-Si-PMOSFET with and without a strained SiGe-channel Contribution to a book, Contribution to a conference proceedings (1998) | Jungemann, Christoph Keith, S. Meinerzhagen, Bernd |
On The Modeling Of CV Data For State Of The Art CMOS Technologies: Do We Need To Include Fast Interface States? Contribution to a book, Contribution to a conference proceedings (1998) | Jungemann, Christoph Meinerzhagen, Bernd |
Efficient Methods for Hall Factor and Transport Coefficient Evaluation for Electrons and Holes in Si and SiGe Based on a Full-Band Structure Abstract, Contribution to a book, Contribution to a conference proceedings (1998) | Jungemann, Christoph Bartels, M. Keith, S. Meinerzhagen, Bernd |
Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible? Journal Article (1998) | Jungemann, Christoph Meinerzhagen, Benrd Decker, S. Keith, Stefan Yamaguchi, S. Goto, H. |
Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors Journal Article (1998) | Goto, Hiroshi Yamaguchi, Seiichiro Jungemann, Christoph |
High Performance Full-Band Monte Carlo Device Simulator FALCON Abstract, Contribution to a conference proceedings (1997) | Yamaguchi, S. Jungemann, Christoph Goto, H. |
A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs Contribution to a book, Contribution to a conference proceedings (1997) | Graf, P. Bufler, F. M. Meinerzhagen, Bernd Jungemann, Christoph |
Investigation of the Influence of Impact Ionization Feedback on the Spatial Distribution of Hot Carriers in an NMOSFET Contribution to a book, Contribution to a conference proceedings (1997) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors Contribution to a book, Contribution to a conference proceedings (1997) | Meinerzhagen, Bernd Jungemann, Christoph Decker, S. Keith, S. Yamaguchi, S. Goto, H. |
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations Contribution to a book, Contribution to a conference proceedings (1997) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
Parameter Extraction of Hydrodynamic Model by Using Fullband Monte Carlo Simulator Journal Article (1997) | Kanata, H. Jungemann, Christoph Satoh, S. |
Accurate Prediction of Hot-Carrier Effects for a Deep Sub-Mu-M CMOS Technology-Based on Inverse Modeling and Full Band Monte-Carlo Device Simulation Contribution to a book, Contribution to a conference proceedings (1996) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
Efficient Full Band Monte Carlo Hot Carrier Simulation for Silicon Devices Contribution to a book, Contribution to a conference proceedings (1996) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation Contribution to a book, Contribution to a conference proceedings (1996) | Jungemann, Christoph Decker, S. Thoma, R. Eng, W. L. Goto, H. |
Is there experimental evidence for a difference between Surface and Bulk Impact Ionization in Silicon Contribution to a book, Contribution to a conference proceedings (1996) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations Journal Article (1996) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
On the Accuracy and Efficiency of Substrate Current Calculations for Sub-$mu$m n-MOSFETs Journal Article (1996) | Jungemann, Christoph Yamaguchi, S. Goto, H. |
Phase Space Multiple Refresh: a General Purpose Statistical Enhancement Technique for Monte Carlo Device Simulation Journal Article (1996) | Jungemann, Christoph Decker, S. Thoma, R. Engl, W.-L. Goto, H. |
Effects of band structure and phonon models on hot electron transport in silicon Journal Article (1996) | Jungemann, Christoph Keith, Stefan Bufler, F. M. Meinerzhagen, Bernd |
A soft threshold lucky electron model for efficient and accurate numerical device simulation Journal Article (1996) | Jungemann, Christoph Thoma, R. Engl, W. L. |
On the influence of band structure and scattering rates on hot electron modeling Contribution to a book, Contribution to a conference proceedings (1995) | Jungemann, Christoph Keith, S. Meinerzhagen, Bernd Engl, W. L. |
A Soft Threshhold Lucky Electron model improved for Device Simulations under low voltage conditions Contribution to a book, Contribution to a conference proceedings (1995) | Jungemann, Christoph Thoma, R. Meinerzhagen, Bernd Engl, W. L. |
Methoden zur Simulation hochenergetischer Elektronen in Ultrakurzkanaltransistoren Dissertation / PhD Thesis (1995) | Jungemann, Christoph |
New highly efficient method for the analysis of correlation functions based on a spherical harmonics expansion of the BTEs Greens function Abstract, Contribution to a conference proceedings (1994) | Jungemann, Christoph Graf, P. Zylka, G. Thoma, R. Engl, W. L. |
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs Contribution to a book, Contribution to a conference proceedings (1994) | Bork, I. Jungemann, Christoph Meinerzhagen, Bernd Engl, W. L. |
A comparison of numerical-solutions of the Boltzmann transport-equation for high-energy electron-transport silicon Journal Article (1994) | Abramo, Antonio Baudry, L. Brunetti, Rosella Castagne, Rene Charef, M. Dessenne, F. Dollfus, Philippe Dutton, Robert W. Engl, Walter Fauquembergue, R. Fiegna, Claudio Fischetti, Massimo V. Galdin, Sylvia Goldsman, Neil Hackel, Michael Hamaguchi, Chihiro Hess, Karl Hennacy, Ken Hesto, Patrice Higman, Jak M. Iizuka, Takahiro Jungemann, Christoph Kamakura, Y. Kosina, Hans Kunikiyo, T. Laux, Steven E. Lim, Hongchin Lin Maziar, Christine Mizuno, Hiroyuki Peifer, H. J. Ramaswamy, Sridhar Sano, Nobuyuki Scorbohaci, Paul G. Selberherr, Siegfried Takenaka, M. Tang, Ting-wei Taniguchi, Kenji Thobel, J. L. Thoma, R. Tomizawa, Kazutaka Tomipzawa, Masaaki Vogelsang, Thomas Wang, Shiuh-Luen Wang, Xiaolin Yao, Chiang-Sheng Yoder, P. D. Yoshii, Akira |
An improved lucky electron model suitable for simulation of silicon NMOSFETs with low supply voltage Contribution to a conference proceedings (1993) | Jungemann, Christoph Thoma, R. Ekel, M. Engl, W. L. |
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers Journal Article (1993) | Jungemann, Christoph Emunds, A. Engl, W. L. |
A Consistent Model for Low and High-Field Electron Transport in Homogeneous Silicon Inversion Layers Abstract, Contribution to a book, Contribution to a conference proceedings (1991) | Emunds, A. Jungemann, Christoph Engl, W. |
Einfluss der Subbandbesetzung auf die Transporteigenschaften quasi 2-dimensionaler Systeme Diploma Thesis (1990) | Jungemann, Christoph |