Efficient multisubband device simulations for nanoscaled field effect transistors including high-k dielectrics and III-V materials
Recently so-called "technology boosters" (SiGe, uniaxial strain, high-k dielectrics and metal gates) have been introduced into the fabrication process of silicon-based integrated circuits. Even III-V materials are discussed as channel materials for CMOS because of their excellent electron mobility. A disadvantage is the poor performance of the III--V PMOSFETs due to their low hole mobility, which might be improved by the same means as the one of silicon. The goal of this project is to support the development of new MOS devices by a systematic investigation of all technological options by reliable physics-based simulations.
An existing simulator, which solves the 6x6 k.p Schrödinger equation (SE), Poisson equation (PE) and Boltzmann transport equation (BTE) and which can handle generally strained silicon or SiGe, arbitrary surface and channel orientations, will be extended to the case of high-k dielectrics, metal gates and III-V semiconductors.
This requires the development and inclusion of high-k related scattering models into the simulator and the extension of the 6x6 k.p SE solver to III-V materials and N bands.
The BTE is solved by a newly developed deterministic solver which is more CPU efficient than the standard Monte Carlo approach. Based on recent progress in the numerical stability of deterministic BTE solvers and a Newton-Raphson approach for all three equations (SE, BE and PE), its performance will be further enhanced. In addition, small-signal and noise analysis will be implemented, which will allow the investigation of RF performance in addition to transport.