Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET
Kai Zhao; Jungemann, Christoph; Xiaoyan Liu
Piscataway, NJ : IEEE (2011)
Contribution to a book, Contribution to a conference proceedings
In: 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Page(s)/Article-Nr.: 2 S.
Identifier
- DOI: 10.1109/EDSSC.2011.6117581
- RWTH PUBLICATIONS: RWTH-CONV-195393