[Contribution to a book]
Spherical Harmonics Expansion and Multi-Scale Modeling
In: Springer handbook of semiconductor devices / Massimo Rudan, Rossella Brunetti, Susanna Reggiani editors, 1413-1450, 2022
[DOI: 10.1007/978-3-030-79827-7_39]

Meinerzhagen, Bernd (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation
In: 2022 IEEE Latin American Electron Devices Conference (LAEDC) : 4-6 July 2022 / publisher: IEEE, 4 Seiten, 2022
[DOI: 10.1109/LAEDC54796.2022.9908244]

Jungemann, Christoph (Corresponding author)
Noei, Maziar (Corresponding author)
Linn, Tobias Sebastian (Corresponding author)

[Contribution to a conference proceedings, Journal Article]
Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures
In: Solid state electronics : SSE, 197, 108439, 2022
[DOI: 10.1016/j.sse.2022.108439]

Jungemann, Christoph (Corresponding author)
Meng, F.
Thomson, M. D.
Roskos, H. G.

[Journal Article]
Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses
In: Physical review / B, 106 (7), 075203, 2022
[DOI: 10.1103/PhysRevB.106.075203]

Meng, Fanqi (Corresponding author)
Walla, Frederik
ul-Islam, Qamar
Pashkin, Alexej
Schneider, Harald
et al.

[Journal Article]
Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress
In: IEEE transactions on electron devices : ED, 69 (9), 4803-4809, 2022
[DOI: 10.1109/TED.2022.3189322]

Dieball, Oliver (Corresponding author)
Rücker, Holger
Heinemann, Bernd
Jungemann, Christoph

[Journal Article]
Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation
In: Journal of computational electronics, 21 (1), 153-168, 2022
[DOI: 10.1007/s10825-021-01846-w]

Noei, Maziar (Corresponding author)
Luckner, Paul
Linn, Tobias Sebastian
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A Maximum Principle for Drift-Diffusion Equations and the Scharfetter-Gummel Discretization
In: Scientific computing in electrical engineering : SCEE 2020, Eindhoven, The Netherlands, February 2020 / Martijn van Beurden, Neil Budko, Wil Schilders Editors, 45-52, 2021
[DOI: 10.1007/978-3-030-84238-3_5]

Bittner, Kai (Corresponding author)
Brachtendorf, Hans Georg
Linn, Tobias Sebastian
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
In: [2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS, 2021-12-05 - 2021-12-08, Monterey, CA, USA], 4 Seiten, 2021
[DOI: 10.1109/BCICTS50416.2021.9682487]

Müller, Markus (Corresponding author)
Schröter, M.
Jungemann, Christoph
Weimer, C.

[Book]
Special Issue on New Simulation Methodologies for Next-Generation TCAD Tools
In: IEEE transactions on electron devices, 68 (11), 5341-5928, C4 Seiten, 2021

Jungemann, Christoph (Editor)
Bonani, Fabrizio (Editor)
Cea, Stephen M. (Editor)
Gnani, Elena (Editor)
Hong, Sung-Min (Editor)
et al.

[Contribution to a book, Contribution to a conference proceedings]
High-harmonic generation from weakly p-doped Si pumped with intense THz pulses
In: 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves : IRMMW-THz 2021 : Aug. 30-Sep. 3, 2021, Chengdu, China / conference organizer: University of Electronic Science and Technology of China, 1 Seite, 2021
[DOI: 10.1109/IRMMW-THz50926.2021.9567287]

Meng, Fanqi
Walla, Frederik
ul-Islam, Qamar
Thomson, Mark D.
Kovalev, Sergey
et al.

[Journal Article]
A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation
In: IEEE transactions on electron devices : ED, 68 (11), 5407-5413, 2021
[DOI: 10.1109/TED.2021.3073677]

Noei, Maziar (Corresponding author)
Linn, Tobias Sebastian
Luckner, Paul
Jungemann, Christoph

[Contribution to a book, Journal Article]
Foreword Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools"
In: IEEE transactions on electron devices, 68 (11), 5346-5349, 2021
[DOI: 10.1109/TED.2021.3116395]

Jungemann, Christoph
Bonani, Fabrizio
Cea, Stephen M.
Gnani, Elena
Hong, Sung-Min
et al.

[Journal Article]
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
In: Physical review applied, 16 (1), 014026, 2021
[DOI: 10.1103/PhysRevApplied.16.014026]

Jech, Markus (Corresponding author)
El-Sayed, Al-Moatasem (Corresponding author)
Tyaginov, Stanislav (Corresponding author)
Waldhör, Dominic (Corresponding author)
Bouakline, Foudhil (Corresponding author)
et al.

[Journal Article]
Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations
In: Journal of scientific computing, 85 (1), 6, 2020
[DOI: 10.1007/s10915-020-01311-z]

Linn, Tobias Sebastian (Corresponding author)
Bittner, Kai
Brachtendorf, Hans Georg
Jungemann, Christoph

[Journal Article]
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space : Implications and Peculiarities
In: IEEE transactions on electron devices : ED, 67 (8), 3315-3322, 2020
[DOI: 10.1109/TED.2020.3000749]

Jech, Markus (Corresponding author)
Rott, Gunnar
Reisinger, Hans
Tyaginov, Stanislav
Rzepa, Gerhard
et al.

[Journal Article]
Studying the switching variability in redox-based resistive switching devices
In: Journal of computational electronics, 19 (4), 1426-1432, 2020
[DOI: 10.1007/s10825-020-01537-y]

Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan
Jungemann, Christoph

[Journal Article]
A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
In: Journal of computational electronics, 19 (3), 975-986, 2020
[DOI: 10.1007/s10825-020-01488-4]

Noei, Maziar (Corresponding author)
Linn, Tobias Sebastian
Jungemann, Christoph

[Contribution to a book]
The Langevin-Boltzmann Equation for Noise Calculation
In: Noise in Nanoscale Semiconductor Devices / Grasser, Tibor (Editor), 649-685, 2020
[DOI: 10.1007/978-3-030-37500-3_19]

Jungemann, Christoph (Corresponding author)

[Contribution to a book, Contribution to a conference proceedings]
First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation
In: 2019 International Electron Devices Meeting : technical digest / publisher: IEEE, 8993630, 2019
[DOI: 10.1109/IEDM19573.2019.8993630]

Jech, M.
Tyaginov, S.
Kaczer, B.
Franco, J.
Jabs, Dominic
et al.

[Contribution to a book, Contribution to a conference proceedings]
On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability
In: Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : SISPAD 2019 : September 4-6, 2019, Udine, Italy / edited by Francesco Driussi ; technical sponsor: IEEE Electron Devices Society, 4 Seiten, 2019
[DOI: 10.1109/SISPAD.2019.8870401]

Jungemann, Christoph (Corresponding author)
Linn, Tobias Sebastian (Corresponding author)
Kargar, Zeinab (Corresponding author)

[Journal Article]
RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver
In: Journal of computational electronics, 18 (4), 1347-1353, 2019
[DOI: 10.1007/s10825-019-01381-9]

Noei, Maziar (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Introducing a Cross-University Bachelor's Programme with Orientation Semester : Enabling a Permeable Academic Education System
In: Proceedings of the 2019 20th International Conference on Research and Education in Mechatronics (REM 2019) : University of Applied Sciences Upper Austria, Wels, Austria, May 23-24, 2019 / Peter Hehenberger (ed.), 6 Seiten, 2019
[DOI: 10.1109/REM.2019.8744132]

Bragard, Michael (Corresponding author)
Sube, Maike
Schneider, Maike
Jungemann, Christoph

[Journal Article]
Transient Simulation of Current and Electrophosphorescence in Organic Light-Emitting Diodes Using the Master Equation
In: IEEE transactions on electron devices : ED, 66 (7), 3012-3019, 2019
[DOI: 10.1109/TED.2019.2917017]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Journal Article]
Master equation study of excitonic processes limiting the luminous efficacy in phosphorescent organic light-emitting diodes
In: Journal of applied physics, 125 (16), 165501, 2019
[DOI: 10.1063/1.5082164]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Journal Article]
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics : Part II: Theory
In: IEEE transactions on electron devices : ED, 66 (1), 241-248, 2018
[DOI: 10.1109/TED.2018.2873421]

Jech, Markus (Corresponding author)
Ullmann, Bianka
Rzepa, Gerhard
Tyaginov, Stanislav
Grill, Alexander
et al.

[Contribution to a book, Journal Article]
Investigation of moments-based transport models applied to plasma waves and the Dyakonov-Shur instability
In: Semiconductor science and technology, 34 (1), 014002, 2019
[DOI: 10.1088/1361-6641/aaf27a]

Linn, Tobias Sebastian (Corresponding author)
Kargar, Zeinab
Jungemann, Christoph

[Journal Article]
KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
In: IEEE transactions on nanotechnology, 17, 6, 2018
[DOI: 10.1109/TNANO.2018.2867904]

Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan
Hardtdegen, Alexander
Hoffmann-Eifert, Susanne
Jungemann, Christoph

[Journal Article]
Microscopic simulation of RF noise in junctionless nanowire transistors
In: Journal of computational electronics, 17 (3), 986-993, 2018
[DOI: 10.1007/s10825-018-1199-4]

Noei, Maziar (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Journal Article]
Investigation of the Dyakonov-Shur instability for THz wave generation based on the Boltzmann transport equation
In: Semiconductor science and technology, 33 (10), 104001, 2018
[DOI: 10.1088/1361-6641/aad956]

Kargar, Zeinab (Corresponding author)
Linn, Tobias Sebastian
Jungemann, Christoph

[Journal Article]
Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET
In: Journal of computational electronics, 17 (3), 1249-1256, 2018
[DOI: 10.1007/s10825-018-1196-7]

Jabs, Dominic (Corresponding author)
Bach, Karl Heinz
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Small-signal analysis of silicon nanowire transistors based on a Poisson/Schrödinger/Boltzmann solver
In: SISPAD 2017 : 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : September 7-9, 2017, Kamakura Prince Hotel, Kamakura, Japan / co-sponsored by the Japan Society of Applied Physics, the Murata Science Foundation, Support Center for Advanced Telecommunications Technology Research ; technical co-sponsored by the IEEE Electron Devices Society, 65-68, 2017
[DOI: 10.23919/SISPAD.2017.8085265]

Noei, Maziar (Corresponding author)
Ruic, Dino
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of THz emission by plasma waves in GaAs devices based on the Boltzmann transport equation
In: SISPAD 2017 : 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : September 7-9, 2017, Kamakura Prince Hotel, Kamakura, Japan / co-sponsored by the Japan Society of Applied Physics, the Murata Science Foundation, Support Center for Advanced Telecommunications Technology Research ; technical co-sponsored by the IEEE Electron Devices Society, 301-304, 2017
[DOI: 10.23919/SISPAD.2017.8085324]

Kargar, Zeinab (Corresponding author)
Ruic, Dino
Linn, Tobias Sebastian
Jungemann, Christoph

[Contribution to a conference proceedings]
Transport modeling for plasma waves in THz devices
In: [International Workshop On Computational Nanotechnology, iwcn2017, 2017-06-05 - 2017-06-09, Windermere, UK], 74, 2017

Jungemann, Christoph
Kargar, Zeinab
Ruic, Dino

[Contribution to a book, Contribution to a conference proceedings]
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode
In: 2017 17th Non-Volatile Memory Technology Symposium (NVMTS) : conference proceedings : August 30-September 1, 2017, RWTH Aachen University, Germany / NVMTS (Non-Volatile Memory Technology Symposium) 2017 ; I. Institute of Physics (Physics of New Materials), RWTH Aachen University; Jülich; Electron Devices Society; IEEE, 4 Seiten, 2017
[DOI: 10.1109/NVMTS.2017.8171310]

Stehling, Wilhelm
Abbaspour, Elhameh
Jungemann, Christoph
Menzel, Stephan

[Contribution to a book, Contribution to a conference proceedings]
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
In: SISPAD 2017 : 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : September 7-9, 2017, Kamakura Prince Hotel, Kamakura, Japan / co-sponsored by the Japan Society of Applied Physics, the Murata Science Foundation, Support Center for Advanced Telecommunications Technology Research ; technical co-sponsored by the IEEE Electron Devices Society, 313-316, 2017
[DOI: 10.23919/SISPAD.2017.8085327]

Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan (Corresponding author)
Jungemann, Christoph (Corresponding author)

[Contribution to a book, Contribution to a conference proceedings]
Simulation of exciton effects in OLEDs based on the master equation
In: [Organic Light Emitting Materials and Devices XXI, 2017-08-06 - 2017-08-10, San Diego, USA / Editor(s): Franky So, Chihaya Adachi, Jang-Joo Kim], 9 Seiten, 2017
[DOI: 10.1117/12.2269972]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Journal Article]
Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation
In: Journal of computational electronics, 16 (3), 487-496, 2017
[DOI: 10.1007/s10825-017-0993-8]

Kargar, Zeinab (Corresponding author)
Ruic, Dino
Linn, Tobias Sebastian
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Analysis of trap-induced noise in organic light-emitting diodes based on the master equation
In: 2017 International Conference on Noise and Fluctuations (ICNF) : 20-23 June 2017 / [Vilnius University, Center for Physical Sciences and Technology, IEEE Lithuania Section [und 6 andere]], 4 Seiten, 2017
[DOI: 10.1109/ICNF.2017.7985940]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of THz emission based on plasma wave excitation
In: 2017 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO) : 17-19 May 2017 / NEMO 2017, IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (May 17-19, 2017, Pabellón de México, Sevilla, Spain), 3 Seiten, 2017
[DOI: 10.1109/NEMO.2017.7964229]

Kargar, Zeinab (Corresponding author)
Ruic, Dino
Linn, Tobias Sebastian
Jungemann, Christoph

[Journal Article]
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
In: Proceedings of the IEEE, 105 (6), 1035-1050, 2017
[DOI: 10.1109/JPROC.2017.2669087]

Chevalier, Pascal (Corresponding author)
Schroter, Michael
Bolognesi, Colombo R.
d'Alessandro, Vincenzo
Alexandrova, Maria
et al.

[Journal Article]
Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit
In: IEEE transactions on electron devices, 64 (3), 923-929, 2017
[DOI: 10.1109/TED.2017.2653197]

Kamrani, Mohammad Hamed
Jabs, Dominic
d'Alessandro, Vincenzo
Rinaldi, Niccolo
Jacquet, Thomas
et al.

[Journal Article]
A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs
In: IEEE transactions on electron devices, 64 (2), 361-367, 2017
[DOI: 10.1109/TED.2016.2640343]

Kamrani, Mohammad Hamed
Jabs, Dominic
d'Alessandro, Vincenzo
Rinaldi, Niccolo
Aufinger, Klaus
et al.

[Journal Article]
Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection
In: Solid state electronics, 128, 129-134, 2016
[DOI: 10.1016/j.sse.2016.10.030]

Jungemann, Christoph (Corresponding author)
Linn, Tobias Sebastian
Bittner, K.
Brachtendorf, H.-G.

[Contribution to a book, Contribution to a conference proceedings]
The EU DOTSEVEN Project: Overview and Results
In: 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) : Austin, TX, USA, 23-26 October 2016 / sponsored by: The IEEE Electron Devices Society ; technically co-sponsored by: The IEEE Solid State Circuits Society, The IEEE Microwave Theory & Techniques Society, 4 Seiten, 2016
[DOI: 10.1109/CSICS.2016.7751070]

Schroter, M.
Boeck, J.
d'Alessandro, V.
Fregonese, S.
Heinemann, B.
et al.

[Journal Article]
Numerical Capacitance Analysis of Single-Layer OLEDs Based on the Master Equation
In: IEEE transactions on electron devices, 63 (12), 4919-4923, 2016
[DOI: 10.1109/TED.2016.2618484]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Physics-based hot-carrier degradation model for SiGe HBTs
In: SISPAD 2016 : 2016 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 2016, Le Méridien Grand Hotel Nuremberg, Nuremberg, Germany / Eberhard Bär, Jürgen Lorenz, Peter Pichler (editors), 341-344, 2016
[DOI: 10.1109/SISPAD.2016.7605216]

Kamrani, Mohammad Hamed (Corresponding author)
Jabs, Dominic
d'Alessandro, Vincenzo
Rinaldi, Niccolo
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Noise simulation of bipolar organic semiconductor devices based on the master equation
In: SISPAD 2016 : 2016 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 2016, Le Méridien Grand Hotel Nuremberg, Nuremberg, Germany / Eberhard Bär, Jürgen Lorenz, Peter Pichler (editors), 331-334, 2016
[DOI: 10.1109/SISPAD.2016.7605214]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A self-consistent solution of the poisson and Boltzmann equations for electrons in graphene with a deterministic approach
In: SISPAD 2016 : 2016 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 2016, Le Méridien Grand Hotel Nuremberg, Nuremberg, Germany / Eberhard Bär, Jürgen Lorenz, Peter Pichler (editors), 205-208, 2016
[DOI: 10.1109/SISPAD.2016.7605183]

Dieball, Oliver (Corresponding author)
Kargar, Zeinab (Corresponding author)
Ruic, Dino
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices
In: SISPAD 2016 : 2016 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 2016, Le Méridien Grand Hotel Nuremberg, Nuremberg, Germany / Eberhard Bär, Jürgen Lorenz, Peter Pichler (editors), 141-144, 2016
[DOI: 10.1109/SISPAD.2016.7605167]

Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan (Corresponding author)
Jungemann, Christoph (Corresponding author)

[Contribution to a book, Contribution to a conference proceedings]
Numerical investigation of junctionless nanowire transistors using a Boltzmann/Schrödinger/Poisson full Newton-Raphson solver
In: SISPAD 2016 : 2016 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 2016, Le Méridien Grand Hotel Nuremberg, Nuremberg, Germany / Eberhard Bär, Jürgen Lorenz, Peter Pichler (editors), 15-18, 2016
[DOI: 10.1109/SISPAD.2016.7605137]

Noei, Maziar (Corresponding author)
Jungemann, Christoph

[Journal Article]
Investigation of Transport Modeling for Plasma Waves in THz Devices
In: IEEE transactions on electron devices : ED, 63 (11), 4402-4408, 2016
[DOI: 10.1109/TED.2016.2608422]

Kargar, Zeinab (Corresponding author)
Linn, Tobias Sebastian
Ruic, Dino
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of Plasma Resonances in MOSFETs for THz-Signal Detection
In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon : EURSOI-ULIS 2016 : Institute for Microelectronics, TU Wien, Vienna, Austria, January 25-27, 2016, 48-51, 2016
[DOI: 10.1109/ULIS.2016.7440049]

Jungemann, Christoph (Corresponding author)
Bittner, K. (Corresponding author)
Brachtendorf, H. G. (Corresponding author)

[Journal Article]
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach
In: Journal of computational electronics, 15 (3), 809-819, 2016
[DOI: 10.1007/s10825-016-0840-3]

Ruic, Dino (Corresponding author)
Jungemann, Christoph

[Journal Article]
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
In: Journal of computational electronics, 15 (3), 939-958, 2016
[DOI: 10.1007/s10825-016-0828-z]

Rupp, K. (Corresponding author)
Jungemann, Christoph (Corresponding author)
Hong, S.-M.
Bina, M.
Grasser, T.
et al.

[Journal Article]
Strain-modulated electronic and thermal transport properties of two-dimensional O-silica
In: Nanotechnology, 27 (26), 265706, 2016
[DOI: 10.1088/0957-4484/27/26/265706]

Han, Yang
Qin, Guangzhao
Jungemann, Christoph (Corresponding author)
Hu, Ming (Corresponding author)

[Contribution to a book, Contribution to a conference proceedings]
Langevin-Boltzmann approach for fluctuations in a hot-electron-hot-phonon system
In: 2015 International Conference on Noise and Fluctuations (ICNF) : 2 - 6 June 2015, Xi'an / [co-sponsored by the IEEE Electron Devices Society ...], 1-4, 2015
[DOI: 10.1109/ICNF.2015.7288623]

Ramonas, Mindaugas (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations for GaAs devices by a deterministic solver
In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015) : Washington, DC, USA, 9 - 11 September 2015 / [technical sponsor IEEE], 361-364, 2015
[DOI: 10.1109/SISPAD.2015.7292334]

Kargar, Zeinab (Corresponding author)
Ruić, Dino
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Small signal and microscopic noise simulation of an nMOSFET by a self-consistent, semi-classical and deterministic approach
In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015) : Washington, DC, USA, 9 - 11 September 2015 / [technical sponsor IEEE], 20-23, 2015
[DOI: 10.1109/SISPAD.2015.7292248]

Ruic, Dino (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Electrothermal simulation of SiGe HBTs and investigation of experimental extraction methods for junction temperature
In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015) : Washington, DC, USA, 9 - 11 September 2015 / [technical sponsor IEEE], 108-111, 2015
[DOI: 10.1109/SISPAD.2015.7292270]

Kamrani, Mohammad Hamed (Corresponding author)
Kochubey, Tatiana
Jabs, Dominic
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of bipolar organic semiconductor devices based on the master equation including generation and recombination
In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015) : Washington, DC, USA, 9 - 11 September 2015 / [technical sponsor IEEE], 136-139, 2015
[DOI: 10.1109/SISPAD.2015.7292277]

Zhou, Weifeng (Corresponding author)
Zimmermann, Christoph
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
The role of the interface reactions in the electroforming of redox-based resistive switching devices using KMC simulations
In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015) : Washington, DC, USA, 9 - 11 September 2015 / [technical sponsor IEEE], 293-296, 2015
[DOI: 10.1109/SISPAD.2015.7292317]

Abbaspour, Elhameh (Corresponding author)
Menzel, Stephan
Jungemann, Christoph

[Journal Article]
Field-induced detrapping in doped organic semiconductors with Gaussian disorder and different carrier localizations on host and guest sites
In: Physical review / B, 92 (10), 104201, 2015
[DOI: 10.1103/PhysRevB.92.104201]

Scheb, M.
Zimmermann, Christoph
Jungemann, Christoph

[Journal Article]
Entwicklung der Simulation in der Mikro-/Nanoelektronik
In: VDE-Dialog : das Technologie-Magazin, 2015 (03), ITG-News: 9-11, 2015

Jungemann, Christoph (Corresponding author)

[Journal Article]
A Robust Algorithm for Microscopic Simulation of Avalanche Breakdown in Semiconductor Devices
In: IEEE transactions on electron devices, 62 (8), 2614-2619, 2015
[DOI: 10.1109/TED.2015.2446132]

Jabs, Dominic (Corresponding author)
Jungemann, Christoph (Corresponding author)
Bach, Karl Heinz (Corresponding author)

[Journal Article]
Simulation of electronic noise in disordered organic semiconductor devices based on the master equation
In: Journal of computational electronics, 14 (1), 37-42, 2015
[DOI: 10.1007/s10825-014-0619-3]

Jungemann, Christoph (Corresponding author)

[Journal Article]
A Deterministic approach to noise in a non-equilibrium electron-phonon system based on the Boltzmann equation
In: Journal of computational electronics, 14 (1), 43-50, 2015
[DOI: 10.1007/s10825-014-0627-3]

Ramonas, Mindaugas
Jungemann, Christoph

[Journal Article]
Numerical aspects of noise simulation in MOSFETs by a Langevin-Boltzmann solver
In: Journal of computational electronics, 14 (1), 21-36, 2015
[DOI: 10.1007/s10825-014-0642-4]

Ruic, Dino
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A semi-distributed method for inductor de-embedding
In: 2014 International Conference on Microelectronic Test Structures (ICMTS 2014) : Udine, Italy, 24 - 27 March 2014 / [organized by the Università degli Studi di Udine. Co-sponsored by the IEEE Electron Devices Society], 141-145, 2014
[DOI: 10.1109/ICMTS.2014.6841482]

Dang, J. (Corresponding author)
Noculak, Achim
Korndörfer, F.
Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25μm CMOS technology
In: 21st IEEE International Conference on Electronics, Circuits, and Systems (ICECS), 2014 : 7 - 10 Dec. 2014, Marseille, France / supported by IEEE; CAS ..., 255-258, 2014
[DOI: 10.1109/ICECS.2014.7049970]

Dang, J. (Corresponding author)
Noculak, A.
Haddadinejad, S.
Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a conference proceedings]
Validity of Macroscopic Noise Models in the case of High-Frequency Bipolar Transistors
In: 2014 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2014 ; Workshop 'Compact Modeling -Enabling Better Insight of Device FeaturesSeptember' ; September, 8, 2014, Yokohama, Japan, 2014

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Avalanche Breakdown of pn-junctions - Simulation by Spherical Harmonics Expansion of the Boltzmann Transport Equation
In: 2014 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2014 ; September 9 - 11, Yokohama, Japan ; extended abstracts, 173-176, 2014

Jabs, Dominic
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
DC, AC and Noise Simulation of Organic Semiconductor Devices based on the Master Equation
In: 2014 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2014 ; September 9 - 11, Yokohama, Japan ; extended abstracts, 137-140, 2014

Jungemann, Christoph
Zimmermann, Christoph

[Contribution to a conference proceedings]
Interface states charges as a vital component for HC degradation modeling
In: [ESREF 2014 : 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis] : 29.09. - 02.10.2014 - TU Berlin, 3 S., 2014

Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Contribution to a book]
Technology Computer Aided Design
In: Guide to state-of-the-art electron devices / edited by Joachim N. Burghartz, Institute for microelectronics Stuttgart (IMS CHIPS), Germany, 97-97, 2013

Esseni, David
Jungemann, Christoph
Lorenz, Jürgen
Palestri, Pierpaolo
Sangiorgi, Enrico
et al.

[Contribution to a book, Contribution to a conference proceedings]
Spherical Harmonics Solver for Coupled Hot-Electron : Hot-Phonon System
In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : Glasgow, 3-5 Sept. 2013, 360-363, 2013
[DOI: 10.1109/SISPAD.2013.6650649]

Ramonas, Mindaugas (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices
In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : Glasgow, 3-5 Sept. 2013, 356-359, 2013
[DOI: 10.1109/SISPAD.2013.6650648]

Ruic, Dino (Corresponding author)
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of Electronic Noise in THz SiGe HBTs by Microscopic Simulation
In: Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE, 8 S., 2013
[DOI: 10.1109/BCTM.2013.6798131]

Jungemann, Christoph (Corresponding author)
Hong, Sung-Min

[Contribution to a conference proceedings, Journal Article]
Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices
In: Solid state electronics : SSE, 84, 112-119, 2013
[DOI: 10.1016/j.sse.2013.02.034]

Jungemann, Christoph (Corresponding author)
Pham, A.-T.
Hong, S.-M.
Smith, L.
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
Comparison of noise predictions by commercial TCAD device simulator to results from a spherical harmonics expansion solver
In: SISPAD 2012 : the International Conference on Simulation of Semiconductor Processes and Devices ; September 5-7, 2012, Denver, Colo., 356-359, 2012

Dinh, T. V.
Klaassen, D. B. M.
Vanhoucke, T.
Gridelet, E.
Mertens, H.
et al.

[Journal Article]
Systematic Compact Modeling of Correlated Noise in Bipolar Transistors
In: IEEE transactions on microwave theory and techniques : MTT, 60 (11), 3403-3412, 2012
[DOI: 10.1109/TMTT.2012.2216284]

Herricht, Jörg
Sakalas, Paulius
Ramonas, Mindaugas
Schroter, Michael
Jungemann, Christoph
et al.

[Contribution to a conference proceedings]
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation
In: 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2012), Denver 5-7 September, 2012, 19-22, 2012

Rupp, K.
Jungemann, Christoph
Bina, M.
Jüngel, A.
Grasser, T.

[Journal Article]
A deterministic method study of the impact of the Pauli principle in double-gate MOSFETs
In: Chinese physics letters, 21 (11), 118501, 2012
[DOI: 10.1088/1674-1056/21/11/118501]

Kai, Zhao
Jungemann, Christoph
Xiao-Yan, Liu

[Contribution to a book, Contribution to a conference proceedings]
Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation
In: 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) : [SINGAPORE JUL 02-06, 2012], 5 S., 2012
[DOI: 10.1109/IPFA.2012.6306265]

Tyaginov, Stanislav
Starkov, Ivan
Triebl, Oliver
Karner, M.
Kernstock, Ch.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Analytical solutions of a spatially homogeneous Boltzmann equation for cyclostationary noise including generation/recombination
In: Nonlinear dynamics of electronic systems - NDES 2012 : Juli 11 - 13, 2012, Wolfenbüttel, Germany ; 20th edition of the International Conference on Nonlinear Dynamics of Electronic Systems / VDE-ITG ..., 4 S., 2012

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Deterministic Simulation of 3D and Quasi-2D Electron and Hole Systems in SiGe Devices
In: [European Solid-State Device Research Conference], 318-321, 2012
[DOI: 10.1109/ESSDERC.2012.6343397]

Jungemann, Christoph
Pham, Anh-Tuan
Hong, Sung-Min
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Quantum simulations of electrostatics in si cylindrical junctionless nanowire nfets and pfets with a homogeneous channel including strain and arbitrary crystallographic orientations
In: Solid state electronics : SSE, 71, 30-36, 2012
[DOI: 10.1016/j.sse.2011.10.016]

Anh-Tuan Pham
Soree, Bart
Magnus, Wim
Jungemann, Christoph
Meinerzhagen, Bernd
et al.

[Contribution to a book, Contribution to a conference proceedings]
Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
In: Ulis 2011 ultimate integration on silicon : Cork, Ireland, 14 - 16 March 2011 ; [International Conference on Ultimate Integration on Silicon], 4 S., 2011
[DOI: 10.1109/ULIS.2011.5757989]

Pham, Anh-Tuan
Soree, B.
Magnus, W.
Jungemann, Christoph
Meinerzhagen, B.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Numerical Modeling of Noise and Transport in SOI Devices
In: Advanced semiconductor-on-insulator technology and related physics 15 : [the Fifteenth International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics was part of the 219th meeting of the Electrochemical Society, held on May 1 - May 6, 2011, in Montreal, Canada] / sponsoring division: Electronics and Photonics. Ed.: Y. Omura, ..., 303-312, 2011
[DOI: 10.1149/1.3570810]

Meinerzhagen, Bernd
Pham, Anh-Tuan
Hong, Sung-Min
Jungemann, Christoph

[Journal Article]
Hot-carrier degradation caused interface state profile; Simulation versus experiment
In: Journal of vacuum science & technology : JVST / B, 29 (1), 01AB09, 2011
[DOI: 10.1116/1.3534021]

Starkov, I. A.
Tyaginov, S. E.
Enichlmair, H.
Cervenka, J.
Jungemann, Christoph
et al.

[Journal Article]
An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion
In: IEEE transactions on electron devices : ED, 58 (5), 1287 -1294, 2011
[DOI: 10.1109/TED.2011.2108659]

Jin, Seong Hoon
Hong, Sung-Min
Jungemann, Christoph

[Journal Article]
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
In: Solid state electronics : SSE, 60 (1), 58-64, 2011
[DOI: 10.1016/j.sse.2011.01.027]

Dinh, Thanh Viet
Hong, Sung-Min
Jungemann, Christoph

[Book]
Deterministic Solvers for the Boltzmann Transport Equation
In: Computational Microelectronics SpringerLink : Bücher, 2011
[DOI: 10.1007/978-3-7091-0778-2]

Hong, Sung-Min
Pham, Anh-Tuan
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Impact of the carrier distribution function on hot-carrier degradation modeling
In: 2011 proceedings of the European Solid-State Device Research Conference (ESSDERC 2011) : Helsinki, Finland, 12 - 16 September 2011 / [sponsors: IEEE ...], 151-154, 2011
[DOI: 10.1109/ESSDERC.2011.6044212]

Tyaginov, Stanislav
Starkov, Ivan
Jungemann, Christoph
Enichlmair, Hubert
Park, Jong-Mun
et al.

[Contribution to a book, Contribution to a conference proceedings]
Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs
In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011) : Osaka, Japan, 8 - 10 September 2011 / [co-sponsored by Japan Soc. of Applied Physics ... Technical co-sponsored by The IEEE Electronic Devices Society ...], 127-130, 2011
[DOI: 10.1109/SISPAD.2011.6035066]

Starkov, Ivan
Ceric, Hajdin
Enichlmair, Hubert
Jong-Mun Park
Tyaginov, Stanislav
et al.

[Contribution to a book, Contribution to a conference proceedings]
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011) : Osaka, Japan, 8 - 10 September 2011 / [co-sponsored by Japan Soc. of Applied Physics ... Technical co-sponsored by The IEEE Electronic Devices Society ...], 123-126, 2011
[DOI: 10.1109/SISPAD.2011.6035065]

Tyaginov, Stanislav
Starkov, Ivan
Triebl, Oliver
Ceric, Hajdin
Grasser, Tibor
et al.

[Contribution to a book, Contribution to a conference proceedings]
Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET
In: 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2 S., 2011
[DOI: 10.1109/EDSSC.2011.6117581]

Kai Zhao
Jungemann, Christoph
Xiaoyan Liu

[Contribution to a conference proceedings, Journal Article]
An analytical approach for physical modeling of hot-carrier induced degradation
In: Microelectronics reliability, 51 (9-11 Special Issue: SI), 1525-1529, 2011
[DOI: 10.1016/j.microrel.2011.07.089]

Tyaginov, S.
Starkov, I.
Enichlmair, H.
Jungemann, Christoph
Park, J. M.
et al.

[Contribution to a conference proceedings, Journal Article]
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C-V characteristics, mobility, and ON current
In: Solid state electronics : SSE, 65 (November-December 2011), 64-71, 2011
[DOI: 10.1016/j.sse.2011.06.021]

Pham, Anh-Tuan
Zhao, Qing-Tai
Jungemann, Christoph
Meinerzhagen, Bernd
Manti, Siegfried
et al.

[Journal Article]
Physical and Electrical Performance Limits of High-Speed SiGeC HBTs-Part I: Vertical Scaling
In: IEEE transactions on electron devices : ED, 58 (11), 3687-3696, 2011
[DOI: 10.1109/TED.2011.2163722]

Schröter, Michael
Wedel, Gerald
Heinemann, Bernd
Jungemann, Christoph
Krause, Julia
et al.

[Contribution to a book, Contribution to a conference proceedings]
High-order spherical harmonics solution of the Boltzmann equation and noise modeling
In: 2010 14th International Workshop on Computational Electronics (IWCE 2010) : Pisa, Italy, 26 - 29 October 2010 / ed.: G. Basso ..., 17-22, 2010
[DOI: 10.1109/IWCE.2010.5677930]

Jungemann, Christoph
Hong, Sung-Min
Matz, G.

[Contribution to a book, Contribution to a conference proceedings]
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current
In: 2010 proceedings of the European Solid-State Device Research Conference (ESSDERC 2010) : Sevilla, Spain, 14 - 16 September 2010 / IEEE, 230 -233, 2010
[DOI: 10.1109/ESSDERC.2010.5618379]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers
In: 2010 14th International Workshop on Computational Electronics (IWCE 2010) : Pisa, Italy, 26 - 29 October 2010 / ed.: G. Basso ..., 4 S., 2010
[DOI: 10.1109/IWCE.2010.5677912]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBTs
In: 2010 European Microwave Integrated Circuits Conference (EuMIC 2010) : Paris, France, 27 - 28 September 2010 ; [part of the 13th European Microwave Week 2010 (EuMW)] / [sponsored by: EuMA, European Microwave Association. Co-sponsored by: IEEE ...], 29-32, 2010

Al-Sadi, M.
d'Alessandro, V.
Fregonese, S.
Hong, Sung-Min
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 303-306, 2010
[DOI: 10.1109/SISPAD.2010.5604500]

Zhao, Kai
Hong, Sung-Min
Jungemann, Christoph
Han, Ru-Qi

[Contribution to a book, Contribution to a conference proceedings]
A deterministic Boltzmann solver for GaAs devices based on the spherical harmonics expansion
In: 2010 14th International Workshop on Computational Electronics (IWCE 2010) : Pisa, Italy, 26 - 29 October 2010 / ed.: G. Basso ..., 4 S., 2010
[DOI: 10.1109/IWCE.2010.5677933]

Bieder, J.
Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 135-138, 2010
[DOI: 10.1109/SISPAD.2010.5604547]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode
In: 2010 IEEE International Reliability Physics Symposium : IRPS 2010 ; Anaheim, California, USA, 2 - 6 May 2010, 175-181, 2010
[DOI: 10.1109/IRPS.2010.5488833]

Riedlberger, E.
Keller, R.
Reisinger, H.
Gustin, W.
Spitzer, A.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations
In: 2010 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) : Singapore, 5 - 9 July 2010 / [organised by IEEE Reliability/CPMT/ED Singapore Chapter. Technically co-sponsored by IEEE Electron Devices Society ...], 1-6, 2010
[DOI: 10.1109/IPFA.2010.5532230]

Starkov, I. A.
Tyaginov, S. E.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
In: 2010 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) : Singapore, 5 - 9 July 2010 / [organised by IEEE Reliability/CPMT/ED Singapore Chapter. Technically co-sponsored by IEEE Electron Devices Society ...], 1-5, 2010
[DOI: 10.1109/IPFA.2010.5532001]

Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Solving Boltzmann Transport Equation Without Monte-Carlo Algorithms : New Methods for Industrial TCAD Applications
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 4 S., 2010
[DOI: 10.1109/SISPAD.2010.5604501]

Meinerzhagen, Bernd
Pham, Anh-Tuan
Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 167-170, 2010
[DOI: 10.1109/SISPAD.2010.5604540]

Matz, Gregor
Hong, Sung-Min
Jungemann, Christoph

[Report]
Analysis of the IMOS Transistor with a Floating Body, 2010

Kraus, R.
Jungemann, Christoph

[Journal Article]
A Deterministic Boltzmann Equation Solver Based on a Higher-Order Spherical Harmonics Expansion with Full-Band Effects
In: IEEE transactions on electron devices : ED, 57, 2390-2397, 2010
[DOI: 10.1109/TED.2010.2062519]

Hong, Sun-Ming
Matz, Gregor
Jungemann, Christoph

[Contribution to a conference proceedings, Journal Article]
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors
In: Solid state electronics : SSE, 54 (9), 942-949, 2010
[DOI: 10.1016/j.sse.2010.04.015]

Dinh, Thanh Viet
Kraus, Rainer
Jungemann, Christoph

[Contribution to a conference proceedings, Journal Article]
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
In: Microelectronics reliability, 50 (9¿11), 1267-1272, 2010
[DOI: 10.1016/j.microrel.2010.07.030]

Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Journal Article]
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion
In: Journal of Computational Electronics, 9 (3/4), 153-159, 2010
[DOI: 10.1007/s10825-010-0328-5]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a conference proceedings]
HC degradation model: interface state profile - simulations vs. experiment
In: WoDiM 2010 : 16th Workshop on Dielectric Microelectronics ; June 28-30, 2010 in Bratislava, Slovakia, 128-128, 2010

Starkov, I. A.
Tyaginov, S. E.
Enichlmair, H.
Triebl, O.
Cervenka, J.
et al.

[Contribution to a conference proceedings]
Investigation of transport and noise in terahertz SiGe HBTs based on deterministic spherical harmonics expansion of the Boltzmann transport equation
In: [UFPS 2010, Vilnius, Litauen], 2010

Jungemann, Christoph
Hong, Sung-Min

[Contribution to a book, Contribution to a conference proceedings]
Electron transport in extremely scaled SiGe HBTs
In: 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2009) : Capri, Italy, 12 - 14 October 2009, 67-74, 2009
[DOI: 10.1109/BIPOL.2009.5314141]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of the Vertical IMOS-Transistor by Device Simulation
In: ULIS 2009 : Proceedings of the 10th International Conference on Ultimate Integration of Silicon ; Aachen, March 18-20, 2009 / Edited by: S. Manti ..., 281-284, 2009
[DOI: 10.1109/ULIS.2009.4897591]

Kraus, Rainer
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFETs
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 115-118, 2009
[DOI: 10.1109/SISPAD.2009.5290235]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Impact ionization rates for strained SiGe
In: ULIS 2009 : Proceedings of the 10th International Conference on Ultimate Integration of Silicon ; Aachen, March 18-20, 2009 / Edited by: S. Manti ..., 77-80, 2009
[DOI: 10.1109/ULIS.2009.4897543]

Dinh, Thanh Viet
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of noise performance of double-gate MOSFETs by deterministic simulation of Boltzmann equation
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 103-106, 2009
[DOI: 10.1109/SISPAD.2009.5290240]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of Noise Performance of SiGe HBTs by Deterministic Simulation of Boltzmann Equation in Two-Dimensional Real Space
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 573-576, 2009
[DOI: 10.1063/1.3140538]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Noise in Green Transistors (Small Slope Switches)
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 191-196, 2009
[DOI: 10.1063/1.3140428]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 309-312, 2009
[DOI: 10.1063/1.3140460]

Shimukovitch, A.
Sakalas, P.
Ramonas, M.
Schröter, M.
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors
In: 2009 proceedings of ESSCIRC : Athens, Greece, 14 - 18 September 2009 / [technical co-sponsors: IEEE; SSCS ... Ed. by Dimitris Tsoukalas ...], 165-168, 2009
[DOI: 10.1109/ESSDERC.2009.5331537]

Dinh, Thanh Viet
Kraus, Rainer
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress
In: 2009 IEEE International Integrated Reliability Workshop final report (IRW 2009) : South Lake Tahoe, California, USA, 18 - 22 October 2009 / [sponsored by the IEEE Electron Devices Society and the IEEE Reliability Society]. General chair: Guoqiao Tao, 77 -81, 2009
[DOI: 10.1109/IRWS.2009.5383027]

Riedlberger, E.
Jungemann, Christoph
Spitzer, A.
Stecher, M.
Gustin, W.

[Contribution to a book, Contribution to a conference proceedings]
Oscillator Noise Analysis: Full Spectrum Evaluation Including Orbital Deviations
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 501-504, 2009
[DOI: 10.1063/1.3140516]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS
In: 2009 13th International Workshop on Computational Electronics : (IWCE-13) ; Beijing, China, 27 - 29 May 2009 / IEEE, 4 S., 2009
[DOI: 10.1109/IWCE.2009.5091150]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Modeling of piezoresistive coefficients in Si hole inversion layers
In: ULIS 2009 : Proceedings of the 10th International Conference on Ultimate Integration of Silicon ; Aachen, March 18-20, 2009 / Edited by: S. Manti ..., 121-124, 2009
[DOI: 10.1109/ULIS.2009.4897553]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
The Impact of Collisional Broadening on Noise in Silicon at Equilibrium
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 73-76, 2009
[DOI: 10.1063/1.3140562]

Jungemann, Christoph
Nedjalkov, Mihail

[Contribution to a book, Contribution to a conference proceedings]
On the feasibility of 500 GHz Silicon-Germanium HBTs
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 27-30, 2009
[DOI: 10.1109/SISPAD.2009.5290258]

Pawlak, A.
Schröter, M.
Krause, J.
Wedel, G.
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Accurate mobility and energy relaxation time models for SiGe HBTs numerical simulation
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 241-244, 2009
[DOI: 10.1109/SISPAD.2009.5290206]

Sasso, G.
Matz, G.
Jungemann, Christoph
Rinaldi, N.

[Conference Presentation]
Predictive TCAD support for NanoMOS compact model development
In: 11. Workshop on Analog Circuit, 2009

Meinerzhagen, Bernd
Pham, Anh-Tuan
Jungemann, Christoph

[Journal Article]
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
In: Journal of Computational Electronics, 8 (3/4), 242-266, 2009
[DOI: 10.1007/s10825-009-0301-3]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
In: Solid state electronics : SSE, 53 (12), 1325-1333, 2009
[DOI: 10.1016/j.sse.2009.09.018]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Journal Article]
Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results
In: IEEE transactions on electron devices : ED, 56 (2), 328-336, 2009
[DOI: 10.1109/TED.2008.2010578]

Sakalas, Paulius
Ramonas, Mindaugas
Schröter, Michael
Jungemann, Christoph
Shimukovitch, Artur
et al.

[Contribution to a conference proceedings, Journal Article]
Impact ionization rates for strained Si and SiGe
In: Solid state electronics : SSE, 53 (12), 1318-1324, 2009
[DOI: 10.1016/j.sse.2009.09.013]

Dinh, Than Viet
Jungemann, Christoph

[Journal Article]
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
In: Journal of Computational Electronics, 8 (3/4), 225-241, 2009
[DOI: 10.1007/s10825-009-0294-y]

Hong, S.-M.
Jungemann, Christoph

[Abstract, Contribution to a book, Contribution to a conference proceedings]
Modeling of SiGe HBT Operation in Extreme Temperature Environment
In: Abstract book : GigaHertz Symposium 2008 ; 5-6 March 2008 ; Chalmers University of Technology ; Göteborg, Sweden, 91-91, 2008

Sakalas, P.
Ramonas, M.
Schröter, M.
Kittlaus, A.
Geissler, H.
et al.

[Contribution to a book, Contribution to a conference proceedings]
High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage
In: SiGe, Ge, and related compounds 3: materials, processing, and devices : [contains papers presented at the 3rd SiGe, Ge and Related Compounds: Materials, Processing and Devices Symposium, which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12 - 17, 2008], 687-695, 2008
[DOI: 10.1149/1.2355864]

Krishnamohan, Tejas
Kim, Donghyun
Nishi, Yoshio
Saraswat, Krishna C.
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Deterministic simulation of SiGe HBTs based on the Boltzmann equation
In: Proceedings of the 38th European Solid-State Device Research Conference : Edinburgh International Conference Centre, Edinburgh, Scotland, UK, 15 - 19 September 2008 / organized by IOP, Institute of Physics. Ed. by Stephen Hall ..., 170-173, 2008
[DOI: 10.1109/ESSDERC.2008.4681726]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
In: SiGe, Ge, and related compounds 3: materials, processing, and devices : [contains papers presented at the 3rd SiGe, Ge and Related Compounds: Materials, Processing and Devices Symposium, which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12 - 17, 2008], 397-403, 2008
[DOI: 10.1149/1.2986797]

Krishnamohan, Tejas
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Saraswat, Krishna C.

[Contribution to a book, Contribution to a conference proceedings]
Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport
In: 2008 IEEE International Electron Devices Meeting : (IEDM) ; San Francisco, CA, USA, 15 - 17 December 2008 / [sponsored by the IEEE Electron Devices Society], 4 S., 2008
[DOI: 10.1109/IEDM.2008.4796844]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage
In: 2008 IEEE International Electron Devices Meeting : (IEDM) ; San Francisco, CA, USA, 15 - 17 December 2008 / [sponsored by the IEEE Electron Devices Society], 4 S., 2008
[DOI: 10.1109/IEDM.2008.4796845]

Krishnamohan, Tejas
Kim, Donghyun
Dinh, Thanh Viet
Pham, Anh-Tuan
Meinerzhagen, Bernd
et al.

[Contribution to a book, Contribution to a conference proceedings]
Advances in spherical harmonics solvers for the Boltzmann equation
In: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology : ICSICT ; Beijing, China, 20 - 23 October 2008 / [co-sponsored by: IEEE Beijing Section; Chinese Institute of Electronics (CIE). Technically co-sponsored by IEEE Electron Devices Society ...]. Ed.: Ru Huang ..., 357-360, 2008
[DOI: 10.1109/ICSICT.2008.4734553]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Mobilty Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
In: 2008 IEEE Silicon Nanoelectronics Workshop : SNW 2008 ; Honolulu, Hawaii, USA, 15 - 16 June 2008 / [IEEE Electron Devices Society], 2 S., 2008
[DOI: 10.1109/SNW.2008.5418449]

Krishnamohan, Tejas
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Saraswat, Krishna C.

[Contribution to a book, Contribution to a conference proceedings]
A deterministic Boltzmann equation solver for two-dimensional semiconductor devices
In: 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 : September 9 - 11, 2008, Yumoto Fujiya Hotel, Hakone, Japan / co-sponsored by Japan Soc. of Applied Physics ..., 293-296, 2008
[DOI: 10.1109/SISPAD.2008.4648295]

Hong, Sung-Min
Jungemann, Christoph
Bollhöfer, Matthias

[Contribution to a book, Contribution to a conference proceedings]
Simulation of magnetotransport in nanoscale devices
In: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology : ICSICT ; Beijing, China, 20 - 23 October 2008 / [co-sponsored by: IEEE Beijing Section; Chinese Institute of Electronics (CIE). Technically co-sponsored by IEEE Electron Devices Society ...]. Ed.: Ru Huang ..., 377-380, 2008
[DOI: 10.1109/ICSICT.2008.4734558]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a conference proceedings, Journal Article]
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
In: Solid state electronics : SSE, 52 (9), 1437-1442, 2008
[DOI: 10.1016/j.sse.2008.04.006]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
In: Solid state electronics : SSE, 52, 1660-1668, 2008

Pham, A.-T.
Jungemann, J.
Klawitter, M.
Meinerzhagen, B.

[Journal Article]
Transport and Noise Calculations for Nanoscale Si Devices Based on the Langevin Boltzmann Equation Expanded with Spherical Harmonics
In: Journal of computational and theoretical nanoscience, 5 (6), 1152-1169, 2008
[DOI: 10.1166/jctn.2008.014]

Jungemann, Christoph

[Journal Article]
A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization
In: Journal of Computational Electronics, 7 (3), 99-102, 2008
[DOI: 10.1007/s10825-007-0155-5]

Pham, Anh-Tuan
Meinerzhagen, Bernd
Jungemann, Christoph

[Conference Presentation, Contribution to a conference proceedings]
Numerical Simulation of Electronic Noise in Silicon MOSFETs
In: [MOS-AK Meeting Noise in MOSFET Devices : Friday, 20 April 2007 Schloss Premstaetten], 31 Folien, 2007

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
In: Simulation of semiconductor processes and devices 2007 : SISPAD 2007 : SISPAD 2004 ; [proceedings of the Twelfth International Conference on Simulation of Semiconductor Processes and Devices held in September 2007, at the TU Wien, Vienna, Austria] / Tibor Grasser; Siegfried Selberherr (eds.), 57-60, 2007
[DOI: 10.1007/978-3-211-72861-1_14]

Fiegna, C.
Braccioli, M.
Brugger, S. C.
Bufler, F. M.
Dollfus, P.
et al.

[Contribution to a conference proceedings]
A fast k*p solver for hole inversion layers with an efficient 2D k-space discretization
In: 12th International Workshop on Computational Electronics : October 8-10, 2007, University of Massachusetts, Amherst, USA, 2007

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
A Deterministic Solver for the Langevin Boltzmann Equation Including the Pauli Principle
In: Noise and fluctuations in circuits, devices, and materials : 21 - 24 May 2007, Florence, Italy ; [Conference on Noise and Fluctuations in Circuits, Devices, and Materials] / sponsored and publ. by SPIE. Massimo Macucci ..., ed., 660007, 12 S., 2007
[DOI: 10.1117/12.724514]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates
In: Proceedings of the European Solid State Device Research Conference : Muenchen, Germany, 11 - 13 September 2007 / [organized by TUM, Technische Universität München. Ed. by Doris Schmitt-Landsiedel ...], 390-393, 2007
[DOI: 10.1109/ESSDERC.2007.4430960]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Microscopic modeling of high frequency noise in SiGe HBTs
In: Proceedings of the European Solid State Device Research Conference : Muenchen, Germany, 11 - 13 September 2007 / [organized by TUM, Technische Universität München. Ed. by Doris Schmitt-Landsiedel ...], 183-186, 2007
[DOI: 10.1109/ESSDERC.2007.4430909]

Ramonas, Mindaugas
Sakalas, Paulius
Jungemann, Christoph
Schröter, Michael
Kraus, Wolfgang
et al.

[Contribution to a book, Contribution to a conference proceedings]
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
In: 2007 International Semiconductor Device Research Symposium : [ISDRS '07] ; College Park, MD, 12 - 14 December 2007 / IEEE, [the Institute of Electrical and Electronics Engineers], 1-2, 2007
[DOI: 10.1109/ISDRS.2007.4422476]

Pham, Anh-Tuan
Jungemann, Christoph
Klawitter, M.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Ballisticity of the linear response transport in nanometric silicon devices
In: 2007 International Semiconductor Device Research Symposium : [ISDRS '07] ; College Park, MD, 12 - 14 December 2007 / IEEE, [the Institute of Electrical and Electronics Engineers], 1-2, 2007
[DOI: 10.1109/ISDRS.2007.4422475]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Numerical modeling of electron noise in nanoscale Si devices
In: Noise and fluctuations in circuits, devices, and materials : 21 - 24 May 2007, Florence, Italy ; [Conference on Noise and Fluctuations in Circuits, Devices, and Materials] / sponsored and publ. by SPIE. Massimo Macucci ..., ed., 66001E, 12 S., 2007
[DOI: 10.1117/12.724399]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors
In: Noise and fluctuations in circuits, devices, and materials : 21 - 24 May 2007, Florence, Italy ; [Conference on Noise and Fluctuations in Circuits, Devices, and Materials] / sponsored and publ. by SPIE. Massimo Macucci ..., ed., 66001F, 12 S., 2007
[DOI: 10.1117/12.724631]

Ramonas, Mindaugas
Jungemann, Christoph
Sakalas, Paulius
Schröter, Michael
Kraus, Wolfgang

[Contribution to a book, Contribution to a conference proceedings]
Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems
In: Simulation of semiconductor processes and devices 2007 : SISPAD 2007 : SISPAD 2004 ; [proceedings of the Twelfth International Conference on Simulation of Semiconductor Processes and Devices held in September 2007, at the TU Wien, Vienna, Austria] / Tibor Grasser; Siegfried Selberherr (eds.), 69-72, 2007
[DOI: 10.1007/978-3-211-72861-1_17]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
In: Simulation of semiconductor processes and devices 2007 : SISPAD 2007 : SISPAD 2004 ; [proceedings of the Twelfth International Conference on Simulation of Semiconductor Processes and Devices held in September 2007, at the TU Wien, Vienna, Austria] / Tibor Grasser; Siegfried Selberherr (eds.), 193-196, 2007
[DOI: 10.1007/978-3-211-72861-1_46]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
High Performance, Strained-Ge, Heterostructure p-MOSFETs
In: Simulation of semiconductor processes and devices 2007 : SISPAD 2007 : SISPAD 2004 ; [proceedings of the Twelfth International Conference on Simulation of Semiconductor Processes and Devices held in September 2007, at the TU Wien, Vienna, Austria] / Tibor Grasser; Siegfried Selberherr (eds.), 21-24, 2007
[DOI: 10.1007/978-3-211-72861-1_5]

Krishnamohan, Tejas
Kim, Donghyun
Jungemann, Christoph
Pham, Anh-Tuan
Meinerzhagen, Bernd
et al.

[Contribution to a book, Contribution to a conference proceedings]
Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner
In: Simulation of semiconductor processes and devices 2007 : SISPAD 2007 : SISPAD 2004 ; [proceedings of the Twelfth International Conference on Simulation of Semiconductor Processes and Devices held in September 2007, at the TU Wien, Vienna, Austria] / Tibor Grasser; Siegfried Selberherr (eds.), 113-116, 2007
[DOI: 10.1007/978-3-211-72861-1_27]

Bach, K. H.
Liebmann, R.
Nawaz, M.
Jungemann, Christoph
Ungersboeck, Enzo

[Contribution to a conference proceedings, Journal Article]
High Performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs
In: Microelectronic engineering, 84 (9/10), 2063-2066, 2007
[DOI: 10.1016/j.mee.2007.04.085]

Krishnamohan, T.
Jungemann, Christoph
Kim, Donghyun
Ungersboeck, E.
Selberherr, S.
et al.

[Journal Article]
High-frequency noise in nanoscale metal oxide semiconductor field effect transistors
In: Journal of applied physics, 101, 124501, 2007
[DOI: 10.1063/1.2740345]

Navid, Reza
Jungemann, Christoph
Lee, Thomas H.
Dutton, Robert W.

[Journal Article]
Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator
In: IEEE transactions on electron devices : ED, 54 (9), 2174-2182, 2007
[DOI: 10.1109/TED.2007.902858]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Journal Article]
A Deterministic Approach to RF Noise in Silicon Devices based on the Langevin Boltzmann equation
In: IEEE transactions on electron devices : ED, 54 (5), 1185-1192, 2007
[DOI: 10.1109/TED.2007.893210]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Modeling of High Frequency Noise in SiGe HBTs
In: 2006 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2006 ; Monterey, California, USA, 6 - 8 September 2006 / sponsored by IEEE Electron Devices Society, 271-274, 2006
[DOI: 10.1109/SISPAD.2006.282888]

Sakalas, P.
Chakravorty, A.
Schröter, M.
Ramonas, M.
Herricht, J.
et al.

[Abstract, Contribution to a book, Contribution to a conference proceedings]
A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport
In: 11th International Workshop on Computational Electronics : Book of Abstracts ; Wien, 25-27 May 2006 / (Eds.) Hans Kosina ; Siegfried Selberherr, 13-14, 2006

Jungemann, Christoph
Pham, Anh-Tuan
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative
In: Large-scale scientific computing : 5th International Conference, LSSC 2005, Sozopol, Bulgaria, June 6 - 10, 2005; revised papers / Ivan Lirkov ... (eds.), 164-171, 2006
[DOI: 10.1007/11666806_17]

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase
In: 2006 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2006 ; Monterey, California, USA, 6 - 8 September 2006 / sponsored by IEEE Electron Devices Society, 322-325, 2006
[DOI: 10.1109/SISPAD.2006.282900]

Hagenbeck, R.
Decker, S.
Haibach, P.
Mikolajick, T.
Tempel, G.
et al.

[Contribution to a book, Contribution to a conference proceedings]
A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies
In: 2006 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2006 ; Monterey, California, USA, 6 - 8 September 2006 / sponsored by IEEE Electron Devices Society, 361-364, 2006
[DOI: 10.1109/SISPAD.2006.282909]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs
In: International Electron Devices Meeting, 2006 : IEDM '06 ; 11 - 13 Dec. 2006, [San Francisco, CA ; technical digest] / [IEEE, the Institute of Electrical and Electronics Engineers], 4 S., 2006
[DOI: 10.1109/IEDM.2006.346938]

Krishnamohan, Tejas
Jungemann, Christoph
Kim, Donghyun
Ungersboeck, Enzo
Selberherr, Siegfried
et al.

[Contribution to a book, Contribution to a conference proceedings]
Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs?
In: 2006 Symposium on VLSI Technology, 2006 : Digest of Technical Papers, 144-145, 2006
[DOI: 10.1109/VLSIT.2006.1705258]

Krishnamohan, Tejas
Kim, Donghyun
Jungemann, Christoph
Nishi, Yoshio
Saraswat, Krishna C.

[Contribution to a book, Contribution to a conference proceedings]
Numerical simulation of RF noise in Si devices
In: 2006 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2006 ; Monterey, California, USA, 6 - 8 September 2006 / sponsored by IEEE Electron Devices Society, 87-94, 2006
[DOI: 10.1109/SISPAD.2006.282845]

Jungemann, Christoph
Meinerzhagen, Bernd

[Conference Presentation]
Stable Discretization of the Langevin-Boltzmann Equation based on Spherical Harmonics, Box Integration and Maximum Entropy Dissipation Principle
In: SEMIC 2006, 2006

Jungemann, Christoph

[Journal Article]
A linear response Monte Carlo algorithm for inversion layers and magnetotransport
In: Journal of Computational Electronics, 5 (4), 411-414, 2006
[DOI: 10.1007/s10825-006-0031-8]

Jungemann, Christoph
Pham, Anh-Tuan
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Numerical modeling of RF noise in scaled MOS devices
In: Solid state electronics : SSE, 50, 10-17, 2006
[DOI: 10.1016/j.sse.2005.10.037]

Jungemann, Christoph
Neinhüs, B.
Nguyen, C. D.
Scholten, A. J.
Tiemeijer, L. F.
et al.

[Journal Article]
A full band deterministic model for semiclassical carrier transport in semiconductors
In: Journal of applied physics, 99 (6), 063707, 2006
[DOI: 10.1063/1.2181429]

Smirnov, S.
Jungemann, Christoph

[Contribution to a book, Journal Article]
High-Mobility Low Band-To-Band-Tunneling Strained-Germanium Double-Gate Heterostructure FETs: Simulations
In: IEEE transactions on electron devices : ED, 53 (5), 1000-1009, 2006
[DOI: 10.1109/TED.2006.872367]

Krishnamohan, Tejas
Kim, Donghyun
Nguyen, Chi Dong
Jungemann, Christoph
Nishi, Yoshio
et al.

[Contribution to a conference proceedings, Journal Article]
A semiempirical surface scattering model for quantum corrected full-band Monte-Carlo simulation of biaxially strained Si/SiGe NMOSFETs
In: Solid state electronics : SSE, 50 (4), 694-700, 2006
[DOI: 10.1016/j.sse.2006.03.022]

Pham, Anh-Tuan
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Noise modeling in scaled MOSFET devices
In: Solid state electronics : SSE, 50 (1), 41-44, 2006

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.

[Contribution to a conference proceedings, Journal Article]
Do hot electrons cause excess noise?
In: Solid state electronics : SSE, 50 (4), 674-679, 2006
[DOI: 10.1016/j.sse.2006.03.020]

Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a conference proceedings, Journal Article]
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
In: Materials science & engineering / B, Solid state materials for advanced technology, 135 (3), 224-227, 2006
[DOI: 10.1016/j.mseb.2006.08.010]

Pham, A. T.
Jungemann, Christoph
Nguyen, C. D.
Meinerzhagen, Bernd

[Journal Article]
Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle
In: Journal of applied physics, 100 (2), 024502, 2006
[DOI: 10.1063/1.2212207]

Jungemann, Christoph
Pham, A. T.
Meinerzhagen, B.
Ringhofer, C.
Bollhöfer, M.

[Contribution to a book, Contribution to a conference proceedings]
Über die Vernachlässigung von Beschleunigungseffekten in der Simulation von Siliziumbauelementen
In: ANALOG '05 : Entwicklung von Analogschaltungen mit CAE-Methoden mit dem Schwerpunkt Analogschaltungen unter dem Einfluss von Feldeffekten ; Fachbeiträge der 8. GMM/ITG-Diskussionssitzung ['Entwicklung von Analogschaltungen mit CAE-Methoden'] vom 16. bis 18. März 2005 in Hannover / Veranst.: VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik (GMM) in Zusammenarbeit mit der Informationstechnischen Gesellschaft im VDE (ITG) ... Erweiterte Tagungsleitung: W. Mathis ..., 59-64, 2005

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study
In: Noise in Devices and Circuits III / Alexander A. Balandin; Francois Danneville; M. Jamal Deen; Daniel M. Fleetwood, 150-157, 2005
[DOI: 10.1117/12.609452]

Neinhüs, B.
Jungemann, Christoph
Meinerzhagen, Bernd

[Abstract, Contribution to a conference proceedings]
Surface Scattering Model for Quantum Corrected Monte Carlo Simulation of Strained Si-nMOSFETs
In: TECHCON Abstracts, 157, 2005

Nguyen, Chi Dong
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Do hot electrons produce excess noise?
In: Proceedings of ESSDERC 2005, 35th European Solid-State Device Research Conference : Grenoble, France, 12 - 16 September 2005 / organized by IMEP; LETI. Ed. by Gérard Ghibaudo ..., 329-332, 2005
[DOI: 10.1109/ESSDER.2005.1546652]

Jungemann, Christoph
Meinerzhagen, Bernd

[Journal Article]
Nonparabolic macroscopic transport models for device simualtion based on bulk Monte Carlo data
In: Journal of applied physics, 97 (9), 093710, 2005
[DOI: 10.1063/1.1883311]

Grasser, T.
Kosik, R.
Jungemann, Christoph
Kosina, H.
Selberherr, S.

[Contribution to a book, Contribution to a conference proceedings]
On the High Frequency Limit of the Impedance Field Method for Si
In: Noise and fluctuations : 18th International Conference on Noise and Fluctuations - ICNF 2005, Salamanca, Spain, 19 - 23 September 2005 / ed. Tomás González ..., 799-802, 2005
[DOI: 10.1063/1.2036869]

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
A Frequency Domain Spherical Harmonics Solver for the Langevin Boltzmann Equation
In: Noise and fluctuations : 18th International Conference on Noise and Fluctuations - ICNF 2005, Salamanca, Spain, 19 - 23 September 2005 / ed. Tomás González ..., 777-782, 2005
[DOI: 10.1063/1.2036864]

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Convergence of the Legendre Polynomial Expansion of the Boltzmann Equation for Nanoscale Devices
In: Proceedings of ESSDERC 2005, 35th European Solid-State Device Research Conference : Grenoble, France, 12 - 16 September 2005 / organized by IMEP; LETI. Ed. by Gérard Ghibaudo ..., 341-344, 2005
[DOI: 10.1109/ESSDER.2005.1546655]

Jungemann, Christoph
Bollhöfer, Matthias
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium
In: 2005 NSTI Nanotechnology Conference and Trade Show : NSTI Nanotech 2005; May 8 - 12, 2005, Anaheim Marriott & Convention Center, Anaheim, California, USA; an interdisciplinary integrative forum on nanotechnology, biotechnology and microtechnology; [includes: 2005 NSTI Bio Nano Conference and Trade Show, Bio Nano 2005, 8th International Conference on Modeling and Simulation of Microsystems, MSM 2005, 5th International Conference on Computational Nanoscience and Technology, ICCN 2005, 2005 Workshop on Compact Modeling, WCM 2005, NSTI Nanotech Ventures 2005; technical proceedings] / Nano Science and Technology Institute. - Vol. 3: ICCN, MSM, 25-28, 2005

Jungemann, Christoph
Grasser, T.
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation
In: 2005 NSTI Nanotechnology Conference and Trade Show : NSTI Nanotech 2005; May 8 - 12, 2005, Anaheim Marriott & Convention Center, Anaheim, California, USA; an interdisciplinary integrative forum on nanotechnology, biotechnology and microtechnology; [includes: 2005 NSTI Bio Nano Conference and Trade Show, Bio Nano 2005, 8th International Conference on Modeling and Simulation of Microsystems, MSM 2005, 5th International Conference on Computational Nanoscience and Technology, ICCN 2005, 2005 Workshop on Compact Modeling, WCM 2005, NSTI Nanotech Ventures 2005; technical proceedings] / Nano Science and Technology Institute. - Vol. 3: ICCN, MSM, 33-36, 2005

Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, B.

[Journal Article]
Full-Band Monte-Carlo Simulation of sub-100 nm strained Si CMOS
In: Annual review / Semiconductor Research Corporation, 2005, P012584, 2005

Pham, A. T.
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Study of Charge Carrier Quantization in Strained Si-nMOSFETs
In: Materials science in semiconductor processing, 8 (1/3), 363-366, 2005
[DOI: 10.1016/j.mssp.2004.09.055]

Nguyen, C. D.
Pham, A. T.
Jungemann, Christoph
Meinerzhagen, B.

[Journal Article]
Impact ionization MOS (I-MOS)-Part II: experimental results
In: IEEE transactions on electron devices : ED, 52 (1), 77-84, 2005
[DOI: 10.1109/TED.2004.841345(410)52]

Gopalakrishnan, Kailash
Woo, Raymond
Jungemann, Christoph
Griffin, Peter B.
Plummer, James D.

[Journal Article]
Failure of Moments-Based Transport Models in Nanoscale Devices near Equilibrium
In: IEEE transactions on electron devices : ED, 52 (11), 2404-2408, 2005
[DOI: 10.1109/TED.2005.857184]

Jungemann, Christoph
Grasser, Tibor
Neinhüus, Burkhard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Close-in phase noise in integrated oscillators
In: Noise in communication : 26 - 27 May 2004, Maspalomas, Gran Canaria, Spain / sponsored and publ. by SPIE, the International Society for Optical Engineering. Langford B. White ..., chairs/ed., 27-37, 2004
[DOI: 10.1117/12.546818]

Navid, Reza
Jungemann, Christoph
Lee, Thomas H.
Dutton, Robert W.

[Contribution to a book, Contribution to a conference proceedings]
Noise modeling of Si and SiGe devices
In: Proceedings / 2004 7th International Conference on Solid-State and Integrated Circuits Technology : October 18 - 21, 2004, Beijing, China / [sponsored by: Chinese Institute of Electronics; IEEE Beijing Section ...]. Ed.: Ru Huang .... - 2, 1112-1117 vol.2, 2004
[DOI: 10.1109/ICSICT.2004.1436708]

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation
In: Proceedings / 2004 7th International Conference on Solid-State and Integrated Circuits Technology : October 18 - 21, 2004, Beijing, China / [sponsored by: Chinese Institute of Electronics; IEEE Beijing Section ...]. Ed.: Ru Huang .... - Vol. 2, 991-994, 2004
[DOI: 10.1109/ICSICT.2004.1436672]

Grgec, Dalibor
Jungemann, Christoph
Nguyen, Chi Dong
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs
In: Simulation of semiconductor processes and devices 2004 : SISPAD 2004 ; [proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices held in Munich, Germany, on September 2 - 4, 2004] / Gerhard Wachutka ... (ed.), 191-194, 2004
[DOI: 10.1007/978-3-7091-0624-2_43]

Krishnamohan, Tejas
Jungemann, Christoph
Saraswat, Krishna C.

[Contribution to a book, Contribution to a conference proceedings]
Advanced Transport Models for Sub-Micrometer Devices
In: Simulation of semiconductor processes and devices 2004 : SISPAD 2004 ; [proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices held in Munich, Germany, on September 2 - 4, 2004] / Gerhard Wachutka ... (ed.), 1-8, 2004
[DOI: 10.1007/978-3-7091-0624-2_1]

Grasser, T.
Jungemann, Christoph
Kosina, H.
Meinerzhagen, B.
Selberherr, S.

[Contribution to a book, Contribution to a conference proceedings]
Impact of the Floating Body Effect on Noise in SOI Devices Investigated by Hydrodynamic Simulation
In: Simulation of semiconductor processes and devices 2004 : SISPAD 2004 ; [proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices held in Munich, Germany, on September 2 - 4, 2004] / Gerhard Wachutka ... (ed.), 235-238, 2004
[DOI: 10.1007/978-3-7091-0624-2_54]

Jungemann, Christoph
Neinhüs, B.
Nguyen, C. D.
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
Extraction of band offsets in Strained Si/Strained SiGe on relaxed SiGe dual-channel enhanced mobility structures
In: SiGe: materials, processing, and devices : proceedings of the first international symposium ; [held at the 206th meeting of the Electrochemical Society, Inc., 2004 fall meeting of the Electrochemical Society of Japan ... at Hilton Hawaiian Village, Honolulu, Hawaii, October 3 - 8, 2004] / sponsoring division: Electronics. Ed.: D. Harame ..., 99-110, 2004

Chleirigh, C. Ni
Jungemann, Christoph
Jung, J.
Olubuyide, O. O.
Hoyt, J. L.

[Abstract, Contribution to a book, Contribution to a conference proceedings]
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey
In: 2004 10th International Workshop on Computational Electronics : IEEE IWCE-10 2004 ; Purdue University, West Lafayette, IN, October 24 - 27, 2004 ; [abstracts] / Mark Lundstrom ..., co-chairs, 40-41, 2004

Nguyen, C. D.
Pham, A. T.
Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation
In: Noise in devices and circuits II : 26-28 May, 2004, Maspalomas, Gran Canaria, Spain, 12 S., 2004
[DOI: 10.1117/12.545991]

Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
Dutton, Robert W.

[Abstract, Contribution to a book, Contribution to a conference proceedings]
A Legendre Polynomial Solver for the Langevin Boltzmann Equation
In: 2004 10th International Workshop on Computational Electronics : IEEE IWCE-10 2004 ; Purdue University, West Lafayette, IN, October 24 - 27, 2004 ; [abstracts] / Mark Lundstrom ..., co-chairs, 22-23, 2004
[DOI: 10.1109/IWCE.2004.1407299]

Jungemann, Christoph
Meinerzhagen, Bernd

[Report]
Full-Band Monte-Carlo Simulation of sub-100 nm strained Si CMOS, 2004

Pham, Anh-Tuan
Nguyen, Chi Dong
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Journal Article]
Investigation of strained Si/SiGe devices by MC simulation
In: Solid state electronics : SSE, 48 (8), 1417-1422, 2004
[DOI: 10.1016/j.sse.2004.02.016]

Jungemann, Christoph
Subba, N.
Goo, J. S.
Riccobene, C.
Xiang, Q.
et al.

[Journal Article]
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey
In: Journal of Computational Electronics, 3 (3/4), 193-197, 2004
[DOI: 10.1007/s10825-004-7043-z]

Nguyen, C. D.
Pham, A. T.
Jungemann, Christoph
Meinerzhagen, B.

[Journal Article]
Investigation of Compact Models for RF Noise in SiGe HBTs by Hydrodynamic Device Simulation
In: IEEE transactions on electron devices : ED, 51 (6), 956-961, 2004
[DOI: 10.1109/TED.2004.828277]

Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd
Dutton, Robert W.

[Journal Article]
A Legendre Polynomial Solver for the Langevin Boltzmann Equation
In: Journal of Computational Electronics, 3 (3/4), 157-160, 2004
[DOI: 10.1007/s10825-004-7036-y]

Jungemann, Christoph
Meinerzhagen, Bernd

[Journal Article]
A Non-Parabolic Six Moments Model for the Simulation of sub-100nm Semiconductor Devices
In: Journal of Computational Electronics, 3 (3/4), 183-187, 2004
[DOI: 10.1007/s10825-004-7041-1]

Grasser, Tibor
Korsik, Robert
Jungemann, Christoph
Meinerzhagen, Bernd
Kosina, Hans
et al.

[Contribution to a conference proceedings, Journal Article]
Numerical Simulation of Strained Si/SiGe Devices : The Hierarchical Approach
In: Applied surface science, 224 (1/4), 235-240, 2004
[DOI: 10.1016/j.apsusc.2003.11.072]

Meinerzhagen, B.
Jungemann, Christoph
Neinhüs, B.
Bartels, M.

[Contribution to a book, Contribution to a conference proceedings]
Maximum drive current scaling properties of strained Si NMOS in the deca-nanometer regime
In: 2003 IEEE International Conference on Simulation of Semiconductor Devices and Processes : SISPAD 2003 ; Boston, Massachusetts, USA, 3 - 5 September 2003 / sponsored by IEEE Electron Devices Society, 191-194, 2003
[DOI: 10.1109/SISPAD.2003.1233669]

Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si xGe (1-x)/Si channel PMOSFET
In: Technical digest / IEDM, IEEE International Electron Devices Meeting 2003 : Washington, DC, December 08-10, 2003 / sponsored by Electron Devices Society of IEEE, 29.3, 4 S., 2003
[DOI: 10.1109/IEDM.2003.1269373]

Krishnamohan, T.
Jungemann, Christoph
Saraswat, K. C.

[Contribution to a book, Journal Article]
Hydrodynamic Modeling of RF Noise for Silicon-Based Devices
In: International journal of high speed electronics and systems, 13 (3), 123-148, 2003
[DOI: 10.1142/S0129156403002046]

Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
A Simple Compact Model for Terminal Current Noise of SiGe HBTs
In: Noise and fluctuations : August 18-22 2003, Charles University Conference Centre Prague, Czech Republic ; proceedings of the 17th international conference ; ICNF 2003/ editor Josef Sikula, 636-639, 2003

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
Hydrodynamic Modeling of RF Noise in CMOS Devices
In: Technical digest / IEDM, IEEE International Electron Devices Meeting 2003 : Washington, DC, December 08-10, 2003 / sponsored by Electron Devices Society of IEEE, 871-874, 2003

Jungemann, Christoph
Neinhüs, B.
Nguyen, C. D.
Meinerzhagen, B.
Dutton, R. W.
et al.

[Contribution to a book, Contribution to a conference proceedings]
On the Diffusion Noise Sources of the Impedance Field Method
In: Noise and fluctuations : August 18-22 2003, Charles University Conference Centre Prague, Czech Republic ; proceedings of the 17th international conference ; ICNF 2003/ editor Josef Sikula, 636-639, 2003

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
MC Simulation of Strained Si/SiGe Devices
In: Proceedings of the 33rd European Solid-State Device Research Conference : Estoril, Portugal, 16 - 18 September 2003 / organizers: Chipidea Microelectronica; IST, Instituto Superior Técnico. Ed. by José Franca ..., 9-14, 2003
[DOI: 10.1109/ESSDERC.2003.1256800]

Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs
In: 2003 IEEE International Conference on Simulation of Semiconductor Devices and Processes : SISPAD 2003 ; Boston, Massachusetts, USA, 3 - 5 September 2003 / sponsored by IEEE Electron Devices Society, 87-90, 2003

Oh, Tae-Young
Jungemann, Christoph
Dutton, R. W.

[Contribution to a book, Contribution to a conference proceedings]
Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale pMOSFETs
In: Nanotech 2003 : 2003 Nanotechnology Conference and Trade Show ; February 23 - 27, 2003, San Francisco, California, USA ; joint meeting includes: includes 6th International Conference on Modeling and Simulation of Microsystems, MSM 2003, 3rd International Conference on Computational Nanoscience and Technology, ICCN 2003, 2003 Workshop on Compact Modeling, WCM 2003 / proceedings ed.: Matthew Laudon .... - Vol. 2, 56-59, 2003

Nguyen, C. D.
Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, B.
Sedlmeier, J.
et al.

[Book]
Hierarchical device simulation : the Monte-Carlo perspective
In: Computational Microelectronics, 2003

Jungemann, Christoph
Meinerzhagen, Bernd

[Book]
Efficient full-band Monte Carlo simulation for device engineering, 2003

Jungemann, Christoph

[Contribution to a conference proceedings, Journal Article]
Evaluation of Compact Noise Modeling for Si/SiGe HBTs Based on Hierarchical Hydrodynamic Noise Simulation
In: Applied surface science, 224 (1/4), 350-353, 2003
[DOI: 10.1016/j.apsusc.2003.11.066]

Bartels, M.
Neinhüs, B.
Jungemann, Christoph
Meinerzhagen, B.

[Contribution to a conference proceedings, Journal Article]
In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations
In: IEICE transactions / E, English transactions. C, Electronics, E86-C (3), 314-319, 2003

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Noise analysis for a SiGe HBT by hydrodynamic device simulation
In: Proceedings of the 32nd European Solid-State Device Research Conference : Firenze, Italy, 24 - 26 September 2002 ; [jointly organized with the European Solid-State Circuits Conference, ESSCIRC 2002] / ed. by G. Baccarani ..., 71-74, 2002

Jungemann, Christoph
Neinhüs, Burkard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Efficient Monte Carlo simulation of tunnel currents in MOS structures
In: Proceedings of the 32nd European Solid-State Device Research Conference : Firenze, Italy, 24 - 26 September 2002 ; [jointly organized with the European Solid-State Circuits Conference, ESSCIRC 2002] / ed. by G. Baccarani ..., 179-182, 2002
[DOI: 10.1109/ESSDERC.2002.194899]

Grgec, D.
Vexler, M. I.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Quantum Correction of Electron Density for Monte Carlo Device Simulation
In: ANALOG 2002 : Entwicklung von Analogschaltungen mit CAE-Methoden mit dem Schwerpunkt HF-Schaltungsentwurf - Konzepte, Modellierung, Simulation und Realisierung ; Vorträge der 6. GMM/ITG-Diskussionssitzung vom 13. bis 14. Mai 2002 in Bremen / Veranst.: VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik (GMM) in Zusammenarbeit mit der Informationstechnischen Gesellschaft im VDE (ITG). Wiss. Tagungsleitung: W. Anheier ..., 359-361, 2002

Grgec, D.
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Numerische Simulation des Rauschverhaltens eines Si/SiGe-Heterobipolartransistors basierend auf der Hierarchischen Numerischen Bauelementsimulation
In: ANALOG 2002 : Entwicklung von Analogschaltungen mit CAE-Methoden mit dem Schwerpunkt HF-Schaltungsentwurf - Konzepte, Modellierung, Simulation und Realisierung ; Vorträge der 6. GMM/ITG-Diskussionssitzung vom 13. bis 14. Mai 2002 in Bremen / Veranst.: VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik (GMM) in Zusammenarbeit mit der Informationstechnischen Gesellschaft im VDE (ITG). Wiss. Tagungsleitung: W. Anheier ..., 47-52, 2002

Bartels, M.
Neinhüs, Burkhard
Jungemann, Christoph
Decker, S.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
In-advance CPU time analysis for Monte Carlo device simulations
In: 2002 International Conference on Simulation of Semiconductor Devices and Processes : SISPAD 2002 ; September 4 - 6, 2002, International Conference Center Kobe, Kobe, Japan / co-sponsored by Japan Society of Applied Physics; IEEE Electron Devices Society, 103-106, 2002
[DOI: 10.1109/SISPAD.2002.1034527]

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Hierarchical Numerical Simulation exemplified for SiGe Heterojunction Bipolar Transistors
In: ANALOG 2002 : Entwicklung von Analogschaltungen mit CAE-Methoden mit dem Schwerpunkt HF-Schaltungsentwurf - Konzepte, Modellierung, Simulation und Realisierung ; Vorträge der 6. GMM/ITG-Diskussionssitzung vom 13. bis 14. Mai 2002 in Bremen / Veranst.: VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik (GMM) in Zusammenarbeit mit der Informationstechnischen Gesellschaft im VDE (ITG). Wiss. Tagungsleitung: W. Anheier ..., 15-20, 2002

Meinerzhagen, Bernd
Jungemann, Christoph
Neinhüs, Burkhard
Bartels, M.

[Contribution to a book, Contribution to a conference proceedings]
DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
In: 2002 International Conference on Modeling and Simulation of Microsystems : MSM 2002 ; April 21 - 25, Marriott Resort, San Juan, Puerto Rico ; NanoTech 2002 ACRS joint meeting (MSM/ICCN) ; [held jointly with the International Conference on Computational Nanoscience, ICCN 2002], 548-551, 2002

Neinhüs, Burkhard
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Compact modeling of drain and gate current noise for RF CMOS
In: Technical digest / IEDM, International Electron Devices Meeting 2002 : San Francisco, CA, December 8 - 11, 2002 / sponsored by Electron Devices Society of IEEE, 129-132, 2002

Scholten, A. J.
Tiemeijer, L. F.
van Langevelde, R.
Havens, R. J.
Venezia, V. C.
et al.

[Journal Article]
On the Applicability of Nonself-Consistent Monte Carlo Device Simulations
In: IEEE transactions on electron devices : ED, 49 (6), 1072-1074, 2002
[DOI: 10.1109/TED.2002.1003749]

Jungemann, Christoph
Meinerzhagen, Bernd

[Journal Article]
Hierarchical 2-D DD and HD Noise Simulations of Si and SiGe Devices : Part I: Theory
In: IEEE transactions on electron devices : ED, 49 (7), 1250-1257, 2002
[DOI: 10.1109/TED.2002.1013283]

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd

[Journal Article]
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices : Part II: Results
In: IEEE transactions on electron devices : ED, 49 (7), 1258-1264, 2002
[DOI: 10.1109/TED.2002.1013284]

Jungemann, Christoph
Neinhüs, B.
Decker, S.
Meinerzhagen, Bernd

[Abstract, Contribution to a conference proceedings]
Modeling of the Stochastic Noise of Monte Carlo Device Simulations
In: 3rd IMACS Seminar on Monte Carlo Methods - MCM 2001 : [held in Salzburg (10 - 14 September 2001)], 56-57, 2001

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Hierarchical 2D RF Noise Simulation of Si and SiGe Devices by Langevin-type DD and HD Models based on MC Generated Noise Parameters
In: Technical digest / International Electron Devices Meeting 2001 : IEMD; Washington, DC, December 2-5, 2001, 481-484, 2001
[DOI: 10.1109/IEDM.2001.979550]

Jungemann, Christoph
Neinhüs, Burkhard
Decker, S.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs
In: 2001 International Conference on Modeling and Simulation of Microsystems, MSM 2001, an Interdisciplinary Integrative Forum on Modeling, simulation and Scientific Computing in the Microelectronic, Semiconductor, Sensors, Materials and Bietechnology Fields, March 19 - 21, Hilton Head Island, SC, USA : [held jointly with the International Conference on Computational Nanoscience, ICCN 2001], 458-461, 2001

Jungemann, Christoph
Nguyen, C. D.
Neinhüs, Burkhard
Decker, S.
Meinerzhagen, Bernd

[Contribution to a conference proceedings]
A Methodology for Consistent MC HD and DD Simulations of Submicrometer NMOSFETs
In: Proceedings of MIPRO/MEET 2001 : Opatija, Hrvatska, 21-25.05.2001 / Petar, Biljanović (ed), 14-17, 2001

Jungemann, Christoph
Grgec, D.
Meinerzhagen, B.

[Contribution to a book, Contribution to a conference proceedings]
2D Hierarchical Radio-Frequency Noise Modelling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources
In: Simulation of Semiconductor Processes and Devices 2001 : SISPAD 01 / edited by Dimitris Tsoukalas, Christos Tsamis, 136-139, 2001
[DOI: 10.1007/978-3-7091-6244-6_30]

Decker, S.
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
An Accurate and Efficient Methodology for RF Noise Simulations of nm-scale MOSFETs Based on Langevin-type Drift-diffusion Model
In: Noise in physical systems and 1/f fluctuations : proceedings of the 16th international conference, Gainesville, Florida, USA, 22 - 25 October 2001 / ICNF 2001. Ed.: Gijs Bosman, 659-662, 2001

Decker, S.
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Journal Article]
Comparative Study of Electron Transit Times Evaluated by DD HD and MC Device Simulation for a SiGe HBT
In: IEEE transactions on electron devices : ED, 48 (10), 2216-2220, 2001
[DOI: 10.1109/16.954457]

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd

[Journal Article]
Analysis of the Stochastic Error of Stationary Monte Carlo Device Simulations
In: IEEE transactions on electron devices : ED, 48 (5), 985-992, 2001
[DOI: 10.1109/16.918247]

Jungemann, Christoph
Meinerzhagen, Bernd

[Abstract, Contribution to a book, Contribution to a conference proceedings]
Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation
In: Book of abstracts / 7th International Workshop on Computational Electronics, IWCE Glasgow 2000, 22nd - 25th May, 2000, University of Glasgow, Scotland / [NASA ...]. Ed.: J. R. Barker ..., 96-97, 2000
[DOI: 10.1109/IWCE.2000.869942]

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Investigation of High Frequency Noise in a SiGe Heterobipolar Transistor Based on Shockleys Impedance Field Method and the Hydrodynamic Model
In: International Conference on Modeling and Simulation of Microsystems : MSM 2000 ; an interdisciplinary integrative forum on modeling, simulation and scientific computing in the microelectronic, semiconductor, sensors, materials and biotechnology fields ; March 27 - 29, US Grant, San Diego / Technical sponsors: IEEE Electron Devices Society ... MSM 2000 proceedings ed.: Matthew Laudon, 364-367, 2000

Decker, S.
Neinhüs, Burkhard
Heinemann, B.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Efficiency and Stochastic Error of Monte Carlo Device Simulations
In: Technical digest / IEDM, International Electron Devices Meeting 2000 : San Francisco, CA, December 10 - 13, 2000 / sponsored by Electron Devices Society of IEEE, 109-112, 2000
[DOI: 10.1109/IEDM.2000.904270]

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation
In: 2000 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2000 ; Seattle, Washington, USA, 6 - 8 September 2000 / sponsored by IEEE Electron Devices Society, 42-45, 2000
[DOI: 10.1109/SISPAD.2000.871202]

Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe
In: Technical digest / IEDM, International Electron Devices Meeting 2000 : San Francisco, CA, December 10 - 13, 2000 / sponsored by Electron Devices Society of IEEE, 101-104, 2000
[DOI: 10.1109/IEDM.2000.904268]

Jungemann, Christoph
Heinemann, B.
Tittelbach-Helmrich, K.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities
In: Proceedings of the 30th European Solid-State Device Research Conference : Cork, Ireland, 11 - 13 September 2000 / NMRC, Ireland's ICT Research Centre. Ed. by W. A. Lane, 332-335, 2000
[DOI: 10.1109/ESSDERC.2000.194782]

Neinhüs, Burkhard
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile
In: IEICE transactions / E, English transactions. C, Electronics, 83 (8), 1228-1234, 2000

Jungemann, Christoph
Keith, Stefan
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm
In: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium, 13 - 15 September 1999 / IMEC. Ed. by H. E. Maes ..., 236-239, 1999

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Full-Band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
In: 1999 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '99 ; September 6 - 8, 1999, Kyoto Research Park, Kyoto, Japan / co-sponsored by Japan Society of Applied Physics. IEEE Electron Devices Society ..., 219-222, 1999
[DOI: 10.1109/SISPAD.1999.799300]

Keith, S.
Jungemann, Christoph
Decker, S.
Neinhüs, Burkhard
Bartels, M.
et al.

[Journal Article]
Efficient Full-Band Monte Carlo Simulation of Silicon Devices
In: IEICE transactions / E, English transactions. C, Electronics, E82-C (6), 870-879, 1999

Jungemann, Christoph
Keith, Stefan
Bartels, Martin
Meinerzhagen, Bernd

[Journal Article]
On the Number of Fast Interface States of Standard CMOS Technologies
In: IEEE electron device letters : EDL, 20 (6), 283-285, 1999
[DOI: 10.1109/55.767099]

Jungemann, Christoph
Meinerzhagen, Bernd
Eller, M.

[Journal Article]
Hall Factors of Si NMOS Inversion Layers for MAGFET Modeling
In: IEEE transactions on electron devices : ED, 46 (8), 1803-1804, 1999
[DOI: 10.1109/16.777173]

Jungemann, Christoph
Dudenbostel, D.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Full Band Monte-Carlo Device Simulation of 0.1-0.5 mum Strained-Si P MOSFETs
In: Proceedings of the 28th European Solid-State Device Research Conference, Bordeaux, France, 8 - 10 September 1998, 312-315, 1998

Keith, S.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Full-band Monte Carlo simulation of a 0.12c mu m-Si-PMOSFET with and without a strained SiGe-channel
In: Technical digest / International Electron Devices Meeting 1998 : IEDM; San Francisco, CA, December 6 - 9, 1998, 897-900, 1998
[DOI: 10.1109/IEDM.1998.746499]

Jungemann, Christoph
Keith, S.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
On The Modeling Of CV Data For State Of The Art CMOS Technologies: Do We Need To Include Fast Interface States?
In: Simulation of Semiconductor Processes and Devices 1998 : SISPAD 98 / Kristin De Meyer; Serge Biesemans [Hrsg.], 227-230, 1998
[DOI: 10.1007/978-3-7091-6827-1_57]

Jungemann, Christoph
Meinerzhagen, Bernd

[Abstract, Contribution to a book, Contribution to a conference proceedings]
Efficient Methods for Hall Factor and Transport Coefficient Evaluation for Electrons and Holes in Si and SiGe Based on a Full-Band Structure
In: Extended abstracts of 1998 Sixth International Workshop on Computational Electronics : Osaka University, Osaka, Japan, October 19 - 21, 1998 / sponsored by the Commemorative Association for the Japan World Exposition (1970) ..., 104-107, 1998
[DOI: 10.1109/IWCE.1998.742721]

Jungemann, Christoph
Bartels, M.
Keith, S.
Meinerzhagen, Bernd

[Journal Article]
Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible?
In: Solid state electronics : SSE, 42, 647-655, 1998
[DOI: 10.1016/S0038-1101(97)00298-0]

Jungemann, Christoph
Meinerzhagen, Benrd
Decker, S.
Keith, Stefan
Yamaguchi, S.
et al.

[Journal Article]
Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors
In: Japanese journal of applied physics : JJAP / Part 1, Regular papers, brief communications & review papers, 37, 5437-5443, 1998
[DOI: 10.1143/JJAP.37.5437]

Goto, Hiroshi
Yamaguchi, Seiichiro
Jungemann, Christoph

[Abstract, Contribution to a conference proceedings]
High Performance Full-Band Monte Carlo Device Simulator FALCON
In: Kōen-yokōshū / 44.-Ōyō-Butsurigaku-Kankei-Rengō-Kōenkai : 1997-(Heisei-9-nen)-shunki ; Funabashi, March 28 - 31, 1997 = Extended abstracts, the 44th spring meeting, 1997 / the Japan Society of Applied Physics and Related Societies / Ōyō-Butsuri-Gakkai, 1 S., 1997

Yamaguchi, S.
Jungemann, Christoph
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs
In: Electron Devices Meeting, 1997. IEDM97. Technical Digest., International, 881-884, 1997
[DOI: 10.1109/IEDM.1997.650522]

Graf, P.
Bufler, F. M.
Meinerzhagen, Bernd
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of the Influence of Impact Ionization Feedback on the Spatial Distribution of Hot Carriers in an NMOSFET
In: Proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 1997 / ESSDERC '97. Ed. by H. Grünbacher, 336-339, 1997

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors
In: Proceedings of technical papers / 1997 International Symposium on VLSI Technology, Systems, and Applications, : June 3 - 5, 1997, Lai Lai Sheraton Hotel, Taipei, Taiwan, ROC / [sponsored by National Science Concil, ROC and Industrial Technology Research Institute...], 232-235, 1997
[DOI: 10.1109/VTSA.1997.614765]

Meinerzhagen, Bernd
Jungemann, Christoph
Decker, S.
Keith, S.
Yamaguchi, S.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
In: 1997 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '97 ; Cambridge, MA, USA, September 8 - 10, 1997 / sponsored by IEEE Electron Devices Society, 209-212, 1997
[DOI: 10.1109/SISPAD.1997.621374]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
Parameter Extraction of Hydrodynamic Model by Using Fullband Monte Carlo Simulator
In: Denshi-joho-tsushin-gakkai-gijutsu-kenkyu-hokoku = IEICE technical report, 97 (271), 113-118, 1997

Kanata, H.
Jungemann, Christoph
Satoh, S.

[Contribution to a book, Contribution to a conference proceedings]
Accurate Prediction of Hot-Carrier Effects for a Deep Sub-Mu-M CMOS Technology-Based on Inverse Modeling and Full Band Monte-Carlo Device Simulation
In: 1996 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '96 ; September 2 - 4, 1996, Tokyo University, Hakusan Campus, Tokyo, Japan / sponsored by Japan Society of Applied Physics; IEEE Electron Devices Society. - 1, 59-60, 1996

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Efficient Full Band Monte Carlo Hot Carrier Simulation for Silicon Devices
In: ESSDERC '96 : Proceedings of the 26th European Solid State Device Research Conference, Congress Centre, Bologna, Italy, 9 - 11 September 1996 / ESSDERC'96. Ed. by G. Baccarani .... - 26, 821-824, 1996

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation
In: 1996 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '96 ; September 2 - 4, 1996, Tokyo University, Hakusan Campus, Tokyo, Japan / sponsored by Japan Society of Applied Physics; IEEE Electron Devices Society, 65-66, 1996
[DOI: 10.1109/SISPAD.1996.865276]

Jungemann, Christoph
Decker, S.
Thoma, R.
Eng, W. L.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Is there experimental evidence for a difference between Surface and Bulk Impact Ionization in Silicon
In: Technical digest / International Electron Devices Meeting 1996 : IEMD; San Francisco, CA, December 8 - 11, 1996 / spons. by Electron Devices Society of IEEE, 383-386, 1996
[DOI: 10.1109/IEDM.1996.553608]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
In: Journal of Technology Computer Aided Design : TCAD, N/A, 6 S., 1996
[DOI: 10.1109/TCAD.1996.6449167]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
On the Accuracy and Efficiency of Substrate Current Calculations for Sub-$mu$m n-MOSFETs
In: IEEE electron device letters : EDL, 17 (10), 464-466, 1996
[DOI: 10.1109/55.537076]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
Phase Space Multiple Refresh: a General Purpose Statistical Enhancement Technique for Monte Carlo Device Simulation
In: Journal of Technology Computer Aided Design : TCAD, 24 Seiten, 1996
[DOI: 10.1109/TCAD.1996.6449159]

Jungemann, Christoph
Decker, S.
Thoma, R.
Engl, W.-L.
Goto, H.

[Journal Article]
Effects of band structure and phonon models on hot electron transport in silicon
In: Electrical engineering, 79 (2), 99-101, 1996
[DOI: 10.1007/BF01232918]

Jungemann, Christoph
Keith, Stefan
Bufler, F. M.
Meinerzhagen, Bernd

[Journal Article]
A soft threshold lucky electron model for efficient and accurate numerical device simulation
In: Solid state electronics : SSE, 39 (7), 1079-1086, 1996
[DOI: 10.1016/0038-1101(95)00403-3]

Jungemann, Christoph
Thoma, R.
Engl, W. L.

[Contribution to a book, Contribution to a conference proceedings]
On the influence of band structure and scattering rates on hot electron modeling
In: Simulation of Semiconductor Devices and Processes / Heiner Ryssel and Peter Pichler. - Vol. 6: [Proceedings of the 6th International Conference on 'simulation and Semiconductor Devices and Processes' (SISDEP'95) ; Erlangen, Sept. 6-8, 1995], 222-225, 1995
[DOI: 10.1007/978-3-7091-6619-2_53]

Jungemann, Christoph
Keith, S.
Meinerzhagen, Bernd
Engl, W. L.

[Contribution to a book, Contribution to a conference proceedings]
A Soft Threshhold Lucky Electron model improved for Device Simulations under low voltage conditions
In: ICVC'95 : Proceedings of the 4th International Conference on VLSI and CAD ; Seoul, 1995, 211-214, 1995

Jungemann, Christoph
Thoma, R.
Meinerzhagen, Bernd
Engl, W. L.

[Dissertation / PhD Thesis]
Methoden zur Simulation hochenergetischer Elektronen in Ultrakurzkanaltransistoren
In: Berichte aus der Elektrotechnik, 1995

Jungemann, Christoph

[Abstract, Contribution to a conference proceedings]
New highly efficient method for the analysis of correlation functions based on a spherical harmonics expansion of the BTEs Greens function
In: 3rd international workshop on computational electronics : IWCE-3 ; extended Abstracts ; Portland, Oregon, 1994, 45-48, 1994

Jungemann, Christoph
Graf, P.
Zylka, G.
Thoma, R.
Engl, W. L.

[Contribution to a book, Contribution to a conference proceedings]
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs
In: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits : NUPAD V ; Hilton Hawaiian Village, Honolulu, Hawaii, June 5 - 6, 1994 ; [technical digest] / sponsored by Electron Devices of IEEE, 63-66, 1994
[DOI: 10.1109/NUPAD.1994.343490]

Bork, I.
Jungemann, Christoph
Meinerzhagen, Bernd
Engl, W. L.

[Journal Article]
A comparison of numerical-solutions of the Boltzmann transport-equation for high-energy electron-transport silicon
In: IEEE transactions on electron devices : ED, 41 (9), 1646-1654, 1994
[DOI: 10.1109/16.310119]

Abramo, Antonio
Baudry, L.
Brunetti, Rosella
Castagne, Rene
Charef, M.
et al.

[Contribution to a conference proceedings]
An improved lucky electron model suitable for simulation of silicon NMOSFETs with low supply voltage
In: 8. Int. Conf. on Hot Carriers in Semiconductors. Oxford, Großbritannien 1993, dig., TuP13, 1993

Jungemann, Christoph
Thoma, R.
Ekel, M.
Engl, W. L.

[Journal Article]
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
In: Solid state electronics : SSE, 36, 1529-1540, 1993

Jungemann, Christoph
Emunds, A.
Engl, W. L.

[Abstract, Contribution to a book, Contribution to a conference proceedings]
A Consistent Model for Low and High-Field Electron Transport in Homogeneous Silicon Inversion Layers
In: Extended abstracts of the 1991 International Conference on Solid State Devices and Materials : August 27-29, 1991, Yokohama, Pacifico Yokohama / [Yasuo Nannichi]. Sponsored by the Japan Society of Applied Physics ..., 462-464, 1991

Emunds, A.
Jungemann, Christoph
Engl, W.

[Diploma Thesis]
Einfluss der Subbandbesetzung auf die Transporteigenschaften quasi 2-dimensionaler Systeme, 1990

Jungemann, Christoph