[Contribution to a book, Contribution to a conference proceedings]
Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current
In: 2010 proceedings of the European Solid-State Device Research Conference (ESSDERC 2010) : Sevilla, Spain, 14 - 16 September 2010 / IEEE, 230 -233, 2010
[DOI: 10.1109/ESSDERC.2010.5618379]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers
In: 2010 14th International Workshop on Computational Electronics (IWCE 2010) : Pisa, Italy, 26 - 29 October 2010 / ed.: G. Basso ..., 4 S., 2010
[DOI: 10.1109/IWCE.2010.5677912]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBTs
In: 2010 European Microwave Integrated Circuits Conference (EuMIC 2010) : Paris, France, 27 - 28 September 2010 ; [part of the 13th European Microwave Week 2010 (EuMW)] / [sponsored by: EuMA, European Microwave Association. Co-sponsored by: IEEE ...], 29-32, 2010

Al-Sadi, M.
d'Alessandro, V.
Fregonese, S.
Hong, Sung-Min
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 303-306, 2010
[DOI: 10.1109/SISPAD.2010.5604500]

Zhao, Kai
Hong, Sung-Min
Jungemann, Christoph
Han, Ru-Qi

[Contribution to a book, Contribution to a conference proceedings]
A deterministic Boltzmann solver for GaAs devices based on the spherical harmonics expansion
In: 2010 14th International Workshop on Computational Electronics (IWCE 2010) : Pisa, Italy, 26 - 29 October 2010 / ed.: G. Basso ..., 4 S., 2010
[DOI: 10.1109/IWCE.2010.5677933]

Bieder, J.
Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 135-138, 2010
[DOI: 10.1109/SISPAD.2010.5604547]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode
In: 2010 IEEE International Reliability Physics Symposium : IRPS 2010 ; Anaheim, California, USA, 2 - 6 May 2010, 175-181, 2010
[DOI: 10.1109/IRPS.2010.5488833]

Riedlberger, E.
Keller, R.
Reisinger, H.
Gustin, W.
Spitzer, A.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations
In: 2010 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) : Singapore, 5 - 9 July 2010 / [organised by IEEE Reliability/CPMT/ED Singapore Chapter. Technically co-sponsored by IEEE Electron Devices Society ...], 1-6, 2010
[DOI: 10.1109/IPFA.2010.5532230]

Starkov, I. A.
Tyaginov, S. E.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
In: 2010 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) : Singapore, 5 - 9 July 2010 / [organised by IEEE Reliability/CPMT/ED Singapore Chapter. Technically co-sponsored by IEEE Electron Devices Society ...], 1-5, 2010
[DOI: 10.1109/IPFA.2010.5532001]

Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Solving Boltzmann Transport Equation Without Monte-Carlo Algorithms : New Methods for Industrial TCAD Applications
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 4 S., 2010
[DOI: 10.1109/SISPAD.2010.5604501]

Meinerzhagen, Bernd
Pham, Anh-Tuan
Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects
In: 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) : Bologna, Italy, 6 - 8 September 2010 / [technical co-sponsored by IEEE], 167-170, 2010
[DOI: 10.1109/SISPAD.2010.5604540]

Matz, Gregor
Hong, Sung-Min
Jungemann, Christoph

[Report]
Analysis of the IMOS Transistor with a Floating Body, 2010

Kraus, R.
Jungemann, Christoph

[Journal Article]
A Deterministic Boltzmann Equation Solver Based on a Higher-Order Spherical Harmonics Expansion with Full-Band Effects
In: IEEE transactions on electron devices : ED, 57, 2390-2397, 2010
[DOI: 10.1109/TED.2010.2062519]

Hong, Sun-Ming
Matz, Gregor
Jungemann, Christoph

[Contribution to a conference proceedings, Journal Article]
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors
In: Solid state electronics : SSE, 54 (9), 942-949, 2010
[DOI: 10.1016/j.sse.2010.04.015]

Dinh, Thanh Viet
Kraus, Rainer
Jungemann, Christoph

[Contribution to a conference proceedings, Journal Article]
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
In: Microelectronics reliability, 50 (9¿11), 1267-1272, 2010
[DOI: 10.1016/j.microrel.2010.07.030]

Tyaginov, S. E.
Starkov, I. A.
Triebl, O.
Cervenka, J.
Jungemann, Christoph
et al.

[Journal Article]
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion
In: Journal of Computational Electronics, 9 (3/4), 153-159, 2010
[DOI: 10.1007/s10825-010-0328-5]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a conference proceedings]
HC degradation model: interface state profile - simulations vs. experiment
In: WoDiM 2010 : 16th Workshop on Dielectric Microelectronics ; June 28-30, 2010 in Bratislava, Slovakia, 128-128, 2010

Starkov, I. A.
Tyaginov, S. E.
Enichlmair, H.
Triebl, O.
Cervenka, J.
et al.

[Contribution to a conference proceedings]
Investigation of transport and noise in terahertz SiGe HBTs based on deterministic spherical harmonics expansion of the Boltzmann transport equation
In: [UFPS 2010, Vilnius, Litauen], 2010

Jungemann, Christoph
Hong, Sung-Min

[Contribution to a book, Contribution to a conference proceedings]
Electron transport in extremely scaled SiGe HBTs
In: 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2009) : Capri, Italy, 12 - 14 October 2009, 67-74, 2009
[DOI: 10.1109/BIPOL.2009.5314141]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of the Vertical IMOS-Transistor by Device Simulation
In: ULIS 2009 : Proceedings of the 10th International Conference on Ultimate Integration of Silicon ; Aachen, March 18-20, 2009 / Edited by: S. Manti ..., 281-284, 2009
[DOI: 10.1109/ULIS.2009.4897591]

Kraus, Rainer
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFETs
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 115-118, 2009
[DOI: 10.1109/SISPAD.2009.5290235]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Impact ionization rates for strained SiGe
In: ULIS 2009 : Proceedings of the 10th International Conference on Ultimate Integration of Silicon ; Aachen, March 18-20, 2009 / Edited by: S. Manti ..., 77-80, 2009
[DOI: 10.1109/ULIS.2009.4897543]

Dinh, Thanh Viet
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of noise performance of double-gate MOSFETs by deterministic simulation of Boltzmann equation
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 103-106, 2009
[DOI: 10.1109/SISPAD.2009.5290240]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of Noise Performance of SiGe HBTs by Deterministic Simulation of Boltzmann Equation in Two-Dimensional Real Space
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 573-576, 2009
[DOI: 10.1063/1.3140538]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Noise in Green Transistors (Small Slope Switches)
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 191-196, 2009
[DOI: 10.1063/1.3140428]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 309-312, 2009
[DOI: 10.1063/1.3140460]

Shimukovitch, A.
Sakalas, P.
Ramonas, M.
Schröter, M.
Jungemann, Christoph
et al.

[Contribution to a book, Contribution to a conference proceedings]
Investigation of the Performance of Strained-SiGe Vertical IMOS-Transistors
In: 2009 proceedings of ESSCIRC : Athens, Greece, 14 - 18 September 2009 / [technical co-sponsors: IEEE; SSCS ... Ed. by Dimitris Tsoukalas ...], 165-168, 2009
[DOI: 10.1109/ESSDERC.2009.5331537]

Dinh, Thanh Viet
Kraus, Rainer
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress
In: 2009 IEEE International Integrated Reliability Workshop final report (IRW 2009) : South Lake Tahoe, California, USA, 18 - 22 October 2009 / [sponsored by the IEEE Electron Devices Society and the IEEE Reliability Society]. General chair: Guoqiao Tao, 77 -81, 2009
[DOI: 10.1109/IRWS.2009.5383027]

Riedlberger, E.
Jungemann, Christoph
Spitzer, A.
Stecher, M.
Gustin, W.

[Contribution to a book, Contribution to a conference proceedings]
Oscillator Noise Analysis: Full Spectrum Evaluation Including Orbital Deviations
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 501-504, 2009
[DOI: 10.1063/1.3140516]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS
In: 2009 13th International Workshop on Computational Electronics : (IWCE-13) ; Beijing, China, 27 - 29 May 2009 / IEEE, 4 S., 2009
[DOI: 10.1109/IWCE.2009.5091150]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Modeling of piezoresistive coefficients in Si hole inversion layers
In: ULIS 2009 : Proceedings of the 10th International Conference on Ultimate Integration of Silicon ; Aachen, March 18-20, 2009 / Edited by: S. Manti ..., 121-124, 2009
[DOI: 10.1109/ULIS.2009.4897553]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
The Impact of Collisional Broadening on Noise in Silicon at Equilibrium
In: Noise and fluctuations : 20th International Conference on Noise and Fluctuations, ICNF 2009, Pisa, Italy, 14 - 19 June 2009 / ed. Massimo Macucci; Giovanni Basso, 73-76, 2009
[DOI: 10.1063/1.3140562]

Jungemann, Christoph
Nedjalkov, Mihail

[Contribution to a book, Contribution to a conference proceedings]
On the feasibility of 500 GHz Silicon-Germanium HBTs
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 27-30, 2009
[DOI: 10.1109/SISPAD.2009.5290258]

Pawlak, A.
Schröter, M.
Krause, J.
Wedel, G.
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Accurate mobility and energy relaxation time models for SiGe HBTs numerical simulation
In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society], 241-244, 2009
[DOI: 10.1109/SISPAD.2009.5290206]

Sasso, G.
Matz, G.
Jungemann, Christoph
Rinaldi, N.

[Conference Presentation]
Predictive TCAD support for NanoMOS compact model development
In: 11. Workshop on Analog Circuit, 2009

Meinerzhagen, Bernd
Pham, Anh-Tuan
Jungemann, Christoph

[Journal Article]
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
In: Journal of Computational Electronics, 8 (3/4), 242-266, 2009
[DOI: 10.1007/s10825-009-0301-3]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
In: Solid state electronics : SSE, 53 (12), 1325-1333, 2009
[DOI: 10.1016/j.sse.2009.09.018]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Journal Article]
Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results
In: IEEE transactions on electron devices : ED, 56 (2), 328-336, 2009
[DOI: 10.1109/TED.2008.2010578]

Sakalas, Paulius
Ramonas, Mindaugas
Schröter, Michael
Jungemann, Christoph
Shimukovitch, Artur
et al.

[Contribution to a conference proceedings, Journal Article]
Impact ionization rates for strained Si and SiGe
In: Solid state electronics : SSE, 53 (12), 1318-1324, 2009
[DOI: 10.1016/j.sse.2009.09.013]

Dinh, Than Viet
Jungemann, Christoph

[Journal Article]
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
In: Journal of Computational Electronics, 8 (3/4), 225-241, 2009
[DOI: 10.1007/s10825-009-0294-y]

Hong, S.-M.
Jungemann, Christoph

[Abstract, Contribution to a book, Contribution to a conference proceedings]
Modeling of SiGe HBT Operation in Extreme Temperature Environment
In: Abstract book : GigaHertz Symposium 2008 ; 5-6 March 2008 ; Chalmers University of Technology ; Göteborg, Sweden, 91-91, 2008

Sakalas, P.
Ramonas, M.
Schröter, M.
Kittlaus, A.
Geissler, H.
et al.

[Contribution to a book, Contribution to a conference proceedings]
High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage
In: SiGe, Ge, and related compounds 3: materials, processing, and devices : [contains papers presented at the 3rd SiGe, Ge and Related Compounds: Materials, Processing and Devices Symposium, which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12 - 17, 2008], 687-695, 2008
[DOI: 10.1149/1.2355864]

Krishnamohan, Tejas
Kim, Donghyun
Nishi, Yoshio
Saraswat, Krishna C.
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Deterministic simulation of SiGe HBTs based on the Boltzmann equation
In: Proceedings of the 38th European Solid-State Device Research Conference : Edinburgh International Conference Centre, Edinburgh, Scotland, UK, 15 - 19 September 2008 / organized by IOP, Institute of Physics. Ed. by Stephen Hall ..., 170-173, 2008
[DOI: 10.1109/ESSDERC.2008.4681726]

Hong, Sung-Min
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
In: SiGe, Ge, and related compounds 3: materials, processing, and devices : [contains papers presented at the 3rd SiGe, Ge and Related Compounds: Materials, Processing and Devices Symposium, which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12 - 17, 2008], 397-403, 2008
[DOI: 10.1149/1.2986797]

Krishnamohan, Tejas
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Saraswat, Krishna C.

[Contribution to a book, Contribution to a conference proceedings]
Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport
In: 2008 IEEE International Electron Devices Meeting : (IEDM) ; San Francisco, CA, USA, 15 - 17 December 2008 / [sponsored by the IEEE Electron Devices Society], 4 S., 2008
[DOI: 10.1109/IEDM.2008.4796844]

Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage
In: 2008 IEEE International Electron Devices Meeting : (IEDM) ; San Francisco, CA, USA, 15 - 17 December 2008 / [sponsored by the IEEE Electron Devices Society], 4 S., 2008
[DOI: 10.1109/IEDM.2008.4796845]

Krishnamohan, Tejas
Kim, Donghyun
Dinh, Thanh Viet
Pham, Anh-Tuan
Meinerzhagen, Bernd
et al.

[Contribution to a book, Contribution to a conference proceedings]
Advances in spherical harmonics solvers for the Boltzmann equation
In: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology : ICSICT ; Beijing, China, 20 - 23 October 2008 / [co-sponsored by: IEEE Beijing Section; Chinese Institute of Electronics (CIE). Technically co-sponsored by IEEE Electron Devices Society ...]. Ed.: Ru Huang ..., 357-360, 2008
[DOI: 10.1109/ICSICT.2008.4734553]

Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Mobilty Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
In: 2008 IEEE Silicon Nanoelectronics Workshop : SNW 2008 ; Honolulu, Hawaii, USA, 15 - 16 June 2008 / [IEEE Electron Devices Society], 2 S., 2008
[DOI: 10.1109/SNW.2008.5418449]

Krishnamohan, Tejas
Pham, Anh-Tuan
Jungemann, Christoph
Meinerzhagen, Bernd
Saraswat, Krishna C.

[Contribution to a book, Contribution to a conference proceedings]
A deterministic Boltzmann equation solver for two-dimensional semiconductor devices
In: 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 : September 9 - 11, 2008, Yumoto Fujiya Hotel, Hakone, Japan / co-sponsored by Japan Soc. of Applied Physics ..., 293-296, 2008
[DOI: 10.1109/SISPAD.2008.4648295]

Hong, Sung-Min
Jungemann, Christoph
Bollhöfer, Matthias

[Contribution to a book, Contribution to a conference proceedings]
Simulation of magnetotransport in nanoscale devices
In: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology : ICSICT ; Beijing, China, 20 - 23 October 2008 / [co-sponsored by: IEEE Beijing Section; Chinese Institute of Electronics (CIE). Technically co-sponsored by IEEE Electron Devices Society ...]. Ed.: Ru Huang ..., 377-380, 2008
[DOI: 10.1109/ICSICT.2008.4734558]

Hong, Sung-Min
Jungemann, Christoph