[Contribution to a book, Contribution to a conference proceedings]
An Accurate and Efficient Methodology for RF Noise Simulations of nm-scale MOSFETs Based on Langevin-type Drift-diffusion Model
In: Noise in physical systems and 1/f fluctuations : proceedings of the 16th international conference, Gainesville, Florida, USA, 22 - 25 October 2001 / ICNF 2001. Ed.: Gijs Bosman, 659-662, 2001

Decker, S.
Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Journal Article]
Comparative Study of Electron Transit Times Evaluated by DD HD and MC Device Simulation for a SiGe HBT
In: IEEE transactions on electron devices : ED, 48 (10), 2216-2220, 2001
[DOI: 10.1109/16.954457]

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd

[Journal Article]
Analysis of the Stochastic Error of Stationary Monte Carlo Device Simulations
In: IEEE transactions on electron devices : ED, 48 (5), 985-992, 2001
[DOI: 10.1109/16.918247]

Jungemann, Christoph
Meinerzhagen, Bernd

[Abstract, Contribution to a book, Contribution to a conference proceedings]
Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation
In: Book of abstracts / 7th International Workshop on Computational Electronics, IWCE Glasgow 2000, 22nd - 25th May, 2000, University of Glasgow, Scotland / [NASA ...]. Ed.: J. R. Barker ..., 96-97, 2000
[DOI: 10.1109/IWCE.2000.869942]

Jungemann, Christoph
Neinhüs, B.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Investigation of High Frequency Noise in a SiGe Heterobipolar Transistor Based on Shockleys Impedance Field Method and the Hydrodynamic Model
In: International Conference on Modeling and Simulation of Microsystems : MSM 2000 ; an interdisciplinary integrative forum on modeling, simulation and scientific computing in the microelectronic, semiconductor, sensors, materials and biotechnology fields ; March 27 - 29, US Grant, San Diego / Technical sponsors: IEEE Electron Devices Society ... MSM 2000 proceedings ed.: Matthew Laudon, 364-367, 2000

Decker, S.
Neinhüs, Burkhard
Heinemann, B.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Efficiency and Stochastic Error of Monte Carlo Device Simulations
In: Technical digest / IEDM, International Electron Devices Meeting 2000 : San Francisco, CA, December 10 - 13, 2000 / sponsored by Electron Devices Society of IEEE, 109-112, 2000
[DOI: 10.1109/IEDM.2000.904270]

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation
In: 2000 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2000 ; Seattle, Washington, USA, 6 - 8 September 2000 / sponsored by IEEE Electron Devices Society, 42-45, 2000
[DOI: 10.1109/SISPAD.2000.871202]

Jungemann, Christoph
Neinhüs, Burkhard
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe
In: Technical digest / IEDM, International Electron Devices Meeting 2000 : San Francisco, CA, December 10 - 13, 2000 / sponsored by Electron Devices Society of IEEE, 101-104, 2000
[DOI: 10.1109/IEDM.2000.904268]

Jungemann, Christoph
Heinemann, B.
Tittelbach-Helmrich, K.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities
In: Proceedings of the 30th European Solid-State Device Research Conference : Cork, Ireland, 11 - 13 September 2000 / NMRC, Ireland's ICT Research Centre. Ed. by W. A. Lane, 332-335, 2000
[DOI: 10.1109/ESSDERC.2000.194782]

Neinhüs, Burkhard
Nguyen, C. D.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a conference proceedings, Journal Article]
Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile
In: IEICE transactions / E, English transactions. C, Electronics, 83 (8), 1228-1234, 2000

Jungemann, Christoph
Keith, Stefan
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm
In: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium, 13 - 15 September 1999 / IMEC. Ed. by H. E. Maes ..., 236-239, 1999

Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Full-Band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
In: 1999 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '99 ; September 6 - 8, 1999, Kyoto Research Park, Kyoto, Japan / co-sponsored by Japan Society of Applied Physics. IEEE Electron Devices Society ..., 219-222, 1999
[DOI: 10.1109/SISPAD.1999.799300]

Keith, S.
Jungemann, Christoph
Decker, S.
Neinhüs, Burkhard
Bartels, M.
et al.

[Journal Article]
Efficient Full-Band Monte Carlo Simulation of Silicon Devices
In: IEICE transactions / E, English transactions. C, Electronics, E82-C (6), 870-879, 1999

Jungemann, Christoph
Keith, Stefan
Bartels, Martin
Meinerzhagen, Bernd

[Journal Article]
On the Number of Fast Interface States of Standard CMOS Technologies
In: IEEE electron device letters : EDL, 20 (6), 283-285, 1999
[DOI: 10.1109/55.767099]

Jungemann, Christoph
Meinerzhagen, Bernd
Eller, M.

[Journal Article]
Hall Factors of Si NMOS Inversion Layers for MAGFET Modeling
In: IEEE transactions on electron devices : ED, 46 (8), 1803-1804, 1999
[DOI: 10.1109/16.777173]

Jungemann, Christoph
Dudenbostel, D.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Full Band Monte-Carlo Device Simulation of 0.1-0.5 mum Strained-Si P MOSFETs
In: Proceedings of the 28th European Solid-State Device Research Conference, Bordeaux, France, 8 - 10 September 1998, 312-315, 1998

Keith, S.
Jungemann, Christoph
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
Full-band Monte Carlo simulation of a 0.12c mu m-Si-PMOSFET with and without a strained SiGe-channel
In: Technical digest / International Electron Devices Meeting 1998 : IEDM; San Francisco, CA, December 6 - 9, 1998, 897-900, 1998
[DOI: 10.1109/IEDM.1998.746499]

Jungemann, Christoph
Keith, S.
Meinerzhagen, Bernd

[Contribution to a book, Contribution to a conference proceedings]
On The Modeling Of CV Data For State Of The Art CMOS Technologies: Do We Need To Include Fast Interface States?
In: Simulation of Semiconductor Processes and Devices 1998 : SISPAD 98 / Kristin De Meyer; Serge Biesemans [Hrsg.], 227-230, 1998
[DOI: 10.1007/978-3-7091-6827-1_57]

Jungemann, Christoph
Meinerzhagen, Bernd

[Abstract, Contribution to a book, Contribution to a conference proceedings]
Efficient Methods for Hall Factor and Transport Coefficient Evaluation for Electrons and Holes in Si and SiGe Based on a Full-Band Structure
In: Extended abstracts of 1998 Sixth International Workshop on Computational Electronics : Osaka University, Osaka, Japan, October 19 - 21, 1998 / sponsored by the Commemorative Association for the Japan World Exposition (1970) ..., 104-107, 1998
[DOI: 10.1109/IWCE.1998.742721]

Jungemann, Christoph
Bartels, M.
Keith, S.
Meinerzhagen, Bernd

[Journal Article]
Is Physically Sound and Predictive Modeling of NMOS Substrate Currents Possible?
In: Solid state electronics : SSE, 42, 647-655, 1998
[DOI: 10.1016/S0038-1101(97)00298-0]

Jungemann, Christoph
Meinerzhagen, Benrd
Decker, S.
Keith, Stefan
Yamaguchi, S.
et al.

[Journal Article]
Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors
In: Japanese journal of applied physics : JJAP / Part 1, Regular papers, brief communications & review papers, 37, 5437-5443, 1998
[DOI: 10.1143/JJAP.37.5437]

Goto, Hiroshi
Yamaguchi, Seiichiro
Jungemann, Christoph

[Abstract, Contribution to a conference proceedings]
High Performance Full-Band Monte Carlo Device Simulator FALCON
In: Kōen-yokōshū / 44.-Ōyō-Butsurigaku-Kankei-Rengō-Kōenkai : 1997-(Heisei-9-nen)-shunki ; Funabashi, March 28 - 31, 1997 = Extended abstracts, the 44th spring meeting, 1997 / the Japan Society of Applied Physics and Related Societies / Ōyō-Butsuri-Gakkai, 1 S., 1997

Yamaguchi, S.
Jungemann, Christoph
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs
In: Electron Devices Meeting, 1997. IEDM97. Technical Digest., International, 881-884, 1997
[DOI: 10.1109/IEDM.1997.650522]

Graf, P.
Bufler, F. M.
Meinerzhagen, Bernd
Jungemann, Christoph

[Contribution to a book, Contribution to a conference proceedings]
Investigation of the Influence of Impact Ionization Feedback on the Spatial Distribution of Hot Carriers in an NMOSFET
In: Proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 1997 / ESSDERC '97. Ed. by H. Grünbacher, 336-339, 1997

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors
In: Proceedings of technical papers / 1997 International Symposium on VLSI Technology, Systems, and Applications, : June 3 - 5, 1997, Lai Lai Sheraton Hotel, Taipei, Taiwan, ROC / [sponsored by National Science Concil, ROC and Industrial Technology Research Institute...], 232-235, 1997
[DOI: 10.1109/VTSA.1997.614765]

Meinerzhagen, Bernd
Jungemann, Christoph
Decker, S.
Keith, S.
Yamaguchi, S.
et al.

[Contribution to a book, Contribution to a conference proceedings]
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
In: 1997 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '97 ; Cambridge, MA, USA, September 8 - 10, 1997 / sponsored by IEEE Electron Devices Society, 209-212, 1997
[DOI: 10.1109/SISPAD.1997.621374]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
Parameter Extraction of Hydrodynamic Model by Using Fullband Monte Carlo Simulator
In: Denshi-joho-tsushin-gakkai-gijutsu-kenkyu-hokoku = IEICE technical report, 97 (271), 113-118, 1997

Kanata, H.
Jungemann, Christoph
Satoh, S.

[Contribution to a book, Contribution to a conference proceedings]
Accurate Prediction of Hot-Carrier Effects for a Deep Sub-Mu-M CMOS Technology-Based on Inverse Modeling and Full Band Monte-Carlo Device Simulation
In: 1996 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '96 ; September 2 - 4, 1996, Tokyo University, Hakusan Campus, Tokyo, Japan / sponsored by Japan Society of Applied Physics; IEEE Electron Devices Society. - 1, 59-60, 1996

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Efficient Full Band Monte Carlo Hot Carrier Simulation for Silicon Devices
In: ESSDERC '96 : Proceedings of the 26th European Solid State Device Research Conference, Congress Centre, Bologna, Italy, 9 - 11 September 1996 / ESSDERC'96. Ed. by G. Baccarani .... - 26, 821-824, 1996

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation
In: 1996 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD '96 ; September 2 - 4, 1996, Tokyo University, Hakusan Campus, Tokyo, Japan / sponsored by Japan Society of Applied Physics; IEEE Electron Devices Society, 65-66, 1996
[DOI: 10.1109/SISPAD.1996.865276]

Jungemann, Christoph
Decker, S.
Thoma, R.
Eng, W. L.
Goto, H.

[Contribution to a book, Contribution to a conference proceedings]
Is there experimental evidence for a difference between Surface and Bulk Impact Ionization in Silicon
In: Technical digest / International Electron Devices Meeting 1996 : IEMD; San Francisco, CA, December 8 - 11, 1996 / spons. by Electron Devices Society of IEEE, 383-386, 1996
[DOI: 10.1109/IEDM.1996.553608]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
In: Journal of Technology Computer Aided Design : TCAD, N/A, 6 S., 1996
[DOI: 10.1109/TCAD.1996.6449167]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
On the Accuracy and Efficiency of Substrate Current Calculations for Sub-$mu$m n-MOSFETs
In: IEEE electron device letters : EDL, 17 (10), 464-466, 1996
[DOI: 10.1109/55.537076]

Jungemann, Christoph
Yamaguchi, S.
Goto, H.

[Journal Article]
Phase Space Multiple Refresh: a General Purpose Statistical Enhancement Technique for Monte Carlo Device Simulation
In: Journal of Technology Computer Aided Design : TCAD, 24 Seiten, 1996
[DOI: 10.1109/TCAD.1996.6449159]

Jungemann, Christoph
Decker, S.
Thoma, R.
Engl, W.-L.
Goto, H.

[Journal Article]
Effects of band structure and phonon models on hot electron transport in silicon
In: Electrical engineering, 79 (2), 99-101, 1996
[DOI: 10.1007/BF01232918]

Jungemann, Christoph
Keith, Stefan
Bufler, F. M.
Meinerzhagen, Bernd

[Journal Article]
A soft threshold lucky electron model for efficient and accurate numerical device simulation
In: Solid state electronics : SSE, 39 (7), 1079-1086, 1996
[DOI: 10.1016/0038-1101(95)00403-3]

Jungemann, Christoph
Thoma, R.
Engl, W. L.

[Contribution to a book, Contribution to a conference proceedings]
On the influence of band structure and scattering rates on hot electron modeling
In: Simulation of Semiconductor Devices and Processes / Heiner Ryssel and Peter Pichler. - Vol. 6: [Proceedings of the 6th International Conference on 'simulation and Semiconductor Devices and Processes' (SISDEP'95) ; Erlangen, Sept. 6-8, 1995], 222-225, 1995
[DOI: 10.1007/978-3-7091-6619-2_53]

Jungemann, Christoph
Keith, S.
Meinerzhagen, Bernd
Engl, W. L.

[Contribution to a book, Contribution to a conference proceedings]
A Soft Threshhold Lucky Electron model improved for Device Simulations under low voltage conditions
In: ICVC'95 : Proceedings of the 4th International Conference on VLSI and CAD ; Seoul, 1995, 211-214, 1995

Jungemann, Christoph
Thoma, R.
Meinerzhagen, Bernd
Engl, W. L.

[Dissertation / PhD Thesis]
Methoden zur Simulation hochenergetischer Elektronen in Ultrakurzkanaltransistoren
In: Berichte aus der Elektrotechnik, 1995

Jungemann, Christoph

[Abstract, Contribution to a conference proceedings]
New highly efficient method for the analysis of correlation functions based on a spherical harmonics expansion of the BTEs Greens function
In: 3rd international workshop on computational electronics : IWCE-3 ; extended Abstracts ; Portland, Oregon, 1994, 45-48, 1994

Jungemann, Christoph
Graf, P.
Zylka, G.
Thoma, R.
Engl, W. L.

[Contribution to a book, Contribution to a conference proceedings]
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs
In: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits : NUPAD V ; Hilton Hawaiian Village, Honolulu, Hawaii, June 5 - 6, 1994 ; [technical digest] / sponsored by Electron Devices of IEEE, 63-66, 1994
[DOI: 10.1109/NUPAD.1994.343490]

Bork, I.
Jungemann, Christoph
Meinerzhagen, Bernd
Engl, W. L.

[Journal Article]
A comparison of numerical-solutions of the Boltzmann transport-equation for high-energy electron-transport silicon
In: IEEE transactions on electron devices : ED, 41 (9), 1646-1654, 1994
[DOI: 10.1109/16.310119]

Abramo, Antonio
Baudry, L.
Brunetti, Rosella
Castagne, Rene
Charef, M.
et al.

[Contribution to a conference proceedings]
An improved lucky electron model suitable for simulation of silicon NMOSFETs with low supply voltage
In: 8. Int. Conf. on Hot Carriers in Semiconductors. Oxford, Großbritannien 1993, dig., TuP13, 1993

Jungemann, Christoph
Thoma, R.
Ekel, M.
Engl, W. L.

[Journal Article]
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
In: Solid state electronics : SSE, 36, 1529-1540, 1993

Jungemann, Christoph
Emunds, A.
Engl, W. L.

[Abstract, Contribution to a book, Contribution to a conference proceedings]
A Consistent Model for Low and High-Field Electron Transport in Homogeneous Silicon Inversion Layers
In: Extended abstracts of the 1991 International Conference on Solid State Devices and Materials : August 27-29, 1991, Yokohama, Pacifico Yokohama / [Yasuo Nannichi]. Sponsored by the Japan Society of Applied Physics ..., 462-464, 1991

Emunds, A.
Jungemann, Christoph
Engl, W.

[Diploma Thesis]
Einfluss der Subbandbesetzung auf die Transporteigenschaften quasi 2-dimensionaler Systeme, 1990

Jungemann, Christoph