Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

Starkov, Ivan; Ceric, Hajdin; Enichlmair, Hubert; Jong-Mun Park; Tyaginov, Stanislav; Grasser, Tibor; Jungemann, Christoph

Piscataway, NJ : IEEE (2011)
Contribution to a book, Contribution to a conference proceedings

In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011) : Osaka, Japan, 8 - 10 September 2011 / [co-sponsored by Japan Soc. of Applied Physics ... Technical co-sponsored by The IEEE Electronic Devices Society ...]
Page(s)/Article-Nr.: 127-130

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier