Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current

Pham, Anh-Tuan; Jungemann, Christoph; Meinerzhagen, Bernd

Piscataway, NJ : IEEE (2010)
Contribution to a book, Contribution to a conference proceedings

In: 2010 proceedings of the European Solid-State Device Research Conference (ESSDERC 2010) : Sevilla, Spain, 14 - 16 September 2010 / IEEE
Page(s)/Article-Nr.: 230 -233

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier