Full-band Monte Carlo simulation of a 0.12c mu m-Si-PMOSFET with and without a strained SiGe-channel

Jungemann, Christoph; Keith, S.; Meinerzhagen, Bernd

Piscataway, NJ : IEEE (1998)
Contribution to a book, Contribution to a conference proceedings

In: Technical digest / International Electron Devices Meeting 1998 : IEDM; San Francisco, CA, December 6 - 9, 1998
Page(s)/Article-Nr.: 897-900

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier