Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation

Jungemann, Christoph; Neinhüs, Burkhard; Meinerzhagen, Bernd

Piscataway, NJ : IEEE Operations Center (2000)
Contribution to a book, Contribution to a conference proceedings

In: 2000 International Conference on Simulation of Semiconductor Processes and Devices : SISPAD 2000 ; Seattle, Washington, USA, 6 - 8 September 2000 / sponsored by IEEE Electron Devices Society
Page(s)/Article-Nr.: 42-45

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier