Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs

Krishnamohan, Tejas; Pham, Anh-Tuan; Jungemann, Christoph; Meinerzhagen, Bernd; Saraswat, Krishna C.

Pennington, NJ : ESC, Electrochemical Society (2008)
Contribution to a book, Contribution to a conference proceedings

In: SiGe, Ge, and related compounds 3: materials, processing, and devices : [contains papers presented at the 3rd SiGe, Ge and Related Compounds: Materials, Processing and Devices Symposium, which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12 - 17, 2008]
Page(s)/Article-Nr.: 397-403

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier