Strained-Si, Relaxed-Ge or Strained-(Si)Ge for Future Nanoscale p-MOSFETs?

Krishnamohan, Tejas; Kim, Donghyun; Jungemann, Christoph; Nishi, Yoshio; Saraswat, Krishna C.

Piscataway, NJ : IEEE (2006)
Contribution to a book, Contribution to a conference proceedings

In: 2006 Symposium on VLSI Technology, 2006 : Digest of Technical Papers
Page(s)/Article-Nr.: 144-145

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier