A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si xGe (1-x)/Si channel PMOSFET

Krishnamohan, T.; Jungemann, Christoph; Saraswat, K. C.

Piscataway, NJ : IEEE Operations Center (2003)
Contribution to a book, Contribution to a conference proceedings

In: Technical digest / IEDM, IEEE International Electron Devices Meeting 2003 : Washington, DC, December 08-10, 2003 / sponsored by Electron Devices Society of IEEE
Page(s)/Article-Nr.: 29.3, 4 S.


  • Chair and Institute of Theoretical Electrical Engineering [611410]