TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex Dual Channel pMOSFETs on (001) Relaxed Si1-yGey

Nguyen, C. D.; Pham, A. T.; Jungemann, Christoph; Meinerzhagen, B.

Piscataway, NJ : IEEE Operations Center (2004)
Abstract, Contribution to a book, Contribution to a conference proceedings

In: 2004 10th International Workshop on Computational Electronics : IEEE IWCE-10 2004 ; Purdue University, West Lafayette, IN, October 24 - 27, 2004 ; [abstracts] / Mark Lundstrom ..., co-chairs
Page(s)/Article-Nr.: 40-41


  • Chair and Institute of Theoretical Electrical Engineering [611410]