Accurate mobility and energy relaxation time models for SiGe HBTs numerical simulation

Sasso, G.; Matz, G.; Jungemann, Christoph; Rinaldi, N.

Piscataway, NJ : IEEE (2009)
Contribution to a book, Contribution to a conference proceedings

In: 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2009) : San Diego, CA, USA, 9 - 11 September 2009 / [sponsored by IEEE Electron Devices Society]
Page(s)/Article-Nr.: 241-244

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier