Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Goto, Hiroshi; Yamaguchi, Seiichiro; Jungemann, Christoph

Tokyo : ¯Oy¯o Butsuri Gakkai (1998)
Journal Article

In: Japanese journal of applied physics : JJAP / Part 1, Regular papers, brief communications & review papers
Volume: 37
Page(s)/Article-Nr.: 5437-5443

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier