A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Pham, A. T.; Jungemann, Christoph; Nguyen, C. D.; Meinerzhagen, Bernd

Oxford [u.a.] : Pergamon (2006)
Contribution to a conference proceedings, Journal Article

In: Materials science & engineering / B, Solid state materials for advanced technology
Volume: 135
Issue: 3
Page(s)/Article-Nr.: 224-227

Institutions

  • Chair and Institute of Theoretical Electrical Engineering [611410]

Identifier