Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Chevalier, Pascal (Corresponding author); Schroter, Michael; Bolognesi, Colombo R.; d'Alessandro, Vincenzo; Alexandrova, Maria; Bock, Josef; Flickiger, Ralf; Fregonese, Sebastien; Heinemann, Bernd; Jungemann, Christoph; Lovblom, Rickard; Maneux, Cristell; Ostinelli, Olivier; Pawlak, Andreas; Rinaldi, Niccolo; Rucker, Holger; Wedel, Gerald; Zimmer, Thomas

New York, NY [u.a.] : Institute of Electrical and Electronics Engineers (2017)
Journal Article

In: Proceedings of the IEEE
Volume: 105
Issue: 6
Page(s)/Article-Nr.: 1035-1050


  • Chair and Institute of Theoretical Electrical Engineering [611410]