Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tyaginov, Stanislav; Starkov, Ivan; Triebl, Oliver; Ceric, Hajdin; Grasser, Tibor; Enichlmair, Hubert; Park, Jong-Mun; Jungemann, Christoph

Piscataway, NJ : IEEE (2011)
Contribution to a book, Contribution to a conference proceedings

In: 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011) : Osaka, Japan, 8 - 10 September 2011 / [co-sponsored by Japan Soc. of Applied Physics ... Technical co-sponsored by The IEEE Electronic Devices Society ...]
Page(s)/Article-Nr.: 123-126