Physics-based hot-carrier degradation model for SiGe HBTs

Kamrani, Mohammad Hamed (Corresponding author); Jabs, Dominic; d'Alessandro, Vincenzo; Rinaldi, Niccolo; Jungemann, Christoph

Piscataway, NJ : IEEE (2016)
Contribution to a book, Contribution to a conference proceedings

In: SISPAD 2016 : 2016 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 2016, Le Méridien Grand Hotel Nuremberg, Nuremberg, Germany / Eberhard Bär, Jürgen Lorenz, Peter Pichler (editors)
Page(s)/Article-Nr.: 341-344

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