Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

Kamrani, Mohammad Hamed; Jabs, Dominic; d'Alessandro, Vincenzo; Rinaldi, Niccolo; Jacquet, Thomas; Maneux, Cristell; Zimmer, Thomas; Aufinger, Klaus; Jungemann, Christoph (Corresponding author)

New York, NY : IEEE (2017)
Journal Article

In: IEEE transactions on electron devices
Volume: 64
Issue: 3
Page(s)/Article-Nr.: 923-929

Identifier