First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation
Jech, M.; Tyaginov, S.; Kaczer, B.; Franco, J.; Jabs, Dominic; Jungemann, Christoph; Waltl, M.; Grasser, T.
Piscataway, NJ : IEEE (2019)
Contribution to a book, Contribution to a conference proceedings
In: 2019 International Electron Devices Meeting : technical digest / publisher: IEEE
Page(s)/Article-Nr.: 8993630
Identifier
- DOI: 10.1109/IEDM19573.2019.8993630
- RWTH PUBLICATIONS: RWTH-2020-08447